Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
International Symposium On Compound Semiconductors Award and Heinrich Welker Gold Medal v Young Scientist Award ix Preface xi Sponsors xii Symposium Committees xiii Acknowledgments xiv Review Papers GaInP/GaAs DHBTs for power amplifiers in wireless applications 1(10) P M Asbeck P F Chen G Hanington Y M Hsin Progress of vertical cavity surface emitting lasers 11(10) T Miyamoto F Koyama K Iga Reliability issues in compound semiconductor heterojunction devices 21(10) F Fantini M Borgarino L Cattani P Cova R Menozzi G Salviati C Canali G Meneghesso E Zanoni Optoelectronic Devices and OEICs GaN-based MQW light emitting diodes 31(6) H Kato N Koide A Hirano M Koike H Amano I Akasaki Piezoelectric and excitonic effects on optical properties of pseudomorphically strained wurtzite GaN quantum well lasers 37(6) J B Jeon G D Sanders K W Kim M A Littlejohn Magneto-optical properties of the 3.34 eV emission band in InGaN UV LEDs 43(6) T Taguchi H Kudo C Onodera Y Yamada T Mukai Quantum-confined Stark effect tuned MQW laser using post-growth band-gap engineering 49(6) X Huang A J Seeds J S Roberts A P Knights GaAsP visible light emitting diodes for integration with Si devices 55(6) M Yoshimoto T Yasui S Ha J Saraie H Matsunami Photon-spin controlled lasing oscillation in GaAs vertical cavity surface emitting lasers 61(6) H Ando T Sogawa H Gotoh Temperature dependent cavity-polariton mode splitting in semiconductor microcavities 67(6) A R Pratt T Takamori T Kamijoh Size and temperature effects of a photonic quantum ring device 73(6) K S Kwak J C Ahn B H Park J Y Kim ODae Kwon Semiconductor photonic crystals with active lattice points 79(6) S Nojima Fabrication and characteristics of very narrow waveguide semiconductor Raman amplifiers and lasers 85(6) T Saito K Suto T Kimura Y Oyama A Watanabe J Nishizawa Long-Wavelength and Intersubband Transition Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors 91(8) M Razeghi J Wojkowski J D Kim H Mohseni J J Lee Growth and characterization of InAs/AlInSb type-II superlattices for mid-infrared applications 99(6) S Sasa Y Tsujie M Yano M Inoue Far infrared emission and population inversion of hot holes in MQW InGaAs/GaAs heterostructures excited at lateral transport 105(6) V Ya Aleshkin A A Andronov A V Antonov N A Bekin A V Gavrilenko V I Gavrilenko D G Revin E A Uskova B N Zvonkov N B Zvonkov W Knap J Lusakowski C Skierbiszewski Spectral response of cyclotron resonance quantum Hall effect detector 111(6) A V Antonov I V Erofeeva V I Gavrilenko N G Kalugin A L Korotkov A V Maslovskii M D Moldavskaya S I Pripolzin V L Vaks Y Kawano S Komiyama Coordinate dependence of transient and steady-state responsivity in quantum well infrared photodetectors 117(6) M Ershov Ultrafast energy relaxation time in short wavelength intersubband transition measured by the pump and probe method 123(8) T Asano S Noda K Tomoda Near-infrared intersubband transitions in InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy 131(6) T Mozume H Yoshida A Neogi N Georgiev K Asakawa M Kudo Optical Properties Spatial distribution of light reflectance modulated by near-field radio-frequency excitation in semiconductor structures 137(6) A O Volkov O A Ryabushkin Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy 143(6) M Yoshita T Sasaki M Baba S Koshiba H Sakaki H Akiyama Photocurrent spectroscopic studies of interactions between GaAs/AlAs superlattice Stark ladders and GaAs single quantum well states under an electric field 149(6) T Nogami K Kawasaki K Kawashima K Fujiwara Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single heterostructures 155(6) K Suzuki K Saito K Muraki Y Hirayama Characterization of the effects of Al incorporation in AlGaInP light emitters 161(6) P C Mogensen G Jones N Cain P Blood D J Mowbray S W Bland D Peggs R P Petrie Gain spectra measurement of strained InGaAsP/GaAsP/AlGaAs single and double quantum well laser structures for wavelengths near 800 nm 167(6) A Oster F Bugge G Erbert H Wenzel High thermal stability of Er-related luminescence and atom configurations around Er atoms doped in InP by OMVPE growth 173(4) Y Fujiwara T Ito H Ofuchi T Kawamoto M Tabuchi Y Takeda Field Effect Transistors (FETs and HEMTs) First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO) 177(8) R Vetury H Marchand G Parish P T Fini J P Ibbetson S Keller J S Speck S P DenBaars U K Mishra Passivated 0.15 µm InAlAs/InGaAs HEMTs with 500 GHz fmax: HF performance, thermal stability and reliability 185(8) M Chertouk M Dammann M Massler K Kohler G Weimann InAlAs/pseudomorphic-InGaAs MMICs for 76 GHz-band millimetre wave radar 193(8) T Taguchi K Matsugatani K Hoshino H Yamada Y Ueno High-speed InGaAs/InP doped channel HFETs with a strained Ga0.2In0.8P Schottky barrier enhancement layer grown by GSMBE 201(6) H C Kuo H Hsia Z Tang D Caruth B G Moser M Feng G E Stillman Microstrip InP-HEMT-based MMICs at Q-band and W-band 207(6) M Nawaz M Persson E Choumas M Garcia I Angelov E L Kollberg H Zirath InP-based heterojunction FET with composite channel consisting of In0.53Ga0.47As/In0.4Ga0.6As layers for high drain voltage operation 213(6) A Fujihara E Mizuki Y Ando T Nakayama H Miyamoto N Samoto M Kanamori Elimination of kink effects in InAlAs/InGaAs InP-based HEMTs by means of InP etch stop layer 219(6) G Meneghesso E Perin C Canali E Zanoni Effect of electro-chemical etching in deionized water on RF performance of 0.1 µm gate pseudomorphic InGaAs/AlGaAs HEMT 225(6) M Sato T Ohshima M Tsunotani T Kimura A high gain and high yield 0.14 µm Au/WSi buried gate HJFET technology with directly dry-etched SiO2 openings 231(6) A Wakejima Y Makino K Yamanoguchi K Onda Y Hori K Maruhashi H Miyamoto N Samoto M Kanamori K Ohata Effect of a low resistance multilayer cap on 3.5 V PDC power performance for an enhancement-mode heterojunction FET 237(6) Y Bito N Iwata Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As doped-channel FETs for digital wireless communication 243(6) Y-W Hsu S-S Lu C-C Meng L-B Chen Temperature dependence of noise behaviour in high speed FETs 249(6) J A Fendrich M Feng Comparative investigation of single and double channel submicron InP HEMTs using quasi-2D non-stationary transport modelling 255(6) A Nezzari C Ladner J F Palmier G Post Control of breakdown behaviour for a GaAs MESFET with a field modulating plate 261(6) Y Miyoshi K Asano Y Nashimoto Y Mochizuki K Ishikura M Kuzuhara M Mizuta Direct ion-implanted 0.1 µm E/D mode GaAs MESFET with ft > 100 GHz and fmax > 150 GHz 267(6) H Hsia Z Tang D Becher R Shimon D Caruth J Fendrich M Feng Full band Monte Carlo simulation of a 100 nm 4H-SiC high frequency MOSFET 273(6) M Hjelm H-E Nilsson E Dubaric P Kackell C S Petersson Hetero-Bipolar Transistors (HBTs) First demonstration of an AlGaN/GaN Heterojunction bipolar transistor 279(6) L S McCarthy P Kozodoy M Rodwell S P DenBaars U K Mishra High-speed InGaP/GaAs HBTs with an ultra-thin base 285(6) T Oka K Ouchi K Mochizuki T Nakamura High DC current gain InGaP/GaAs HBT 291(6) N Pan R E Welser C R Lutz J Elliot D P Vu T S Low T Shirley C Hutchinson G Essilfie W Whiteley B Yeats D DAvanzo InGaP/GaAs drift HBTs with high fT and β 297(6) D A Ahmari Q J Hartmann P D Meyer M L Hattendorf Q Yang J Mu M Feng G E Stillman High-speed composite-collector InGaP/InGaAs/GaAs HBTs 303(6) A Hagley R K Surridge High-fT AlGaAs/InGaAs HBTs with reduced emitter resistance for low-power-consumption, high-speed ICs 309(4) T Niwa Y Amamiya M Mamada H Shimawaki Semiconductor Device Physics Monte Carlo simulation of one- and two-dimensional electron gases 313(6) K Yamasaki T Ezaki N Mori C Hamaguchi Multiband modelling of quantum electron transport based on the Green function theory 319(6) M Ogawa T Sugano T Miyoshi First-principle total energy calculations of atomic and electronic structures of Sil-x-yGexCy 325(6) M Ohfuti M Ikeda Y Awano N Yokoyama MBE regrowth over a patterned δ-doped backgate 331(6) M L Leadbeater T M Burke E H Linfield N K Patel D A Ritchie M Pepper GaAs/AlGaAs oxide tunnel barriers fabricated by an atomic force microscope tip-induced nano-oxidation technique 337(6) Y Okada Y Iuchi M Kawabe J S Harris Jr Temperature dependence of the magnetoresistance minima in n-channel Si/Sil-xGex modulation-doped quantum well structures 343(6) D-H Shin C E Becker J J Harris J M Fernandez N J Woods T J Thornton D K Maude J-C Portal Hot electron effects in InAs/AlSb/GaSb quantum wells 349(6) C Gatzke K Fobelets A C Rowe R A Stradling S A Solin Evaluation of phase coherent length at high temperature up to 180 K using triple-barrier resonant tunnelling diodes 355(6) M Suhara T Oobo X-Z Xu Y Miyamoto K Furuya Photoreflectance study of quantum effects on E1 and E1 + Δ1 transitions in GaAs/AlAs superlattices 361(6) T Nakanishi K Okajima M Nakayama H Nishimura Excitonic resonance-induced quenching of photocurrent in narrow miniband GaAs/AlAs superlattice p-i-n diodes 367(6) K Kawasaki M Imazawa K Kawashima K Fujiwara K Tominaga M Hosoda Quantized magnetotransport through magnetic barriers K Tsubaki 373(6) Tunnelling metal-semiconductor devices with adjustable barrier height and width, fabricated with GaAs molecular layer epitaxy and W CVD 379(6) P Plotka F Matsumoto J Nishizawa Quantum Wires Study of selective MBE growth on patterned (001) InP substrates toward realization of <100>-oriented InGaAs ridge quantum wires 385(6) N Ono H Fujikura H Hasegawa Structural and transport characterization of AlGaAs/GaAs quantum wires formed by selective doping mechanism 391(6) S Takabayashi Y Kitasho H Kazama K Yoh Spin relaxation of one-dimensional excitons in GaAs rectangular quantum wires 397(6) T Sogawa H Ando S Ando H Kanbe Migration-enhanced epitaxial growth and photoluminescence excitation analysis of GaAs/AlGaAs quantum wire array of different wire widths 403(6) D H Kim S J Rhee H S Ko Y A Leem M G Sung I C Moon S Y Kim H G Yi W S Kim J-C Woo Transport properties of Schottky in-plane-gate GaAs single and coupled quantum wire transistors 409(6) J Nakamura T Kudoh H Okada H Hasegawa AlGaAs nanometre scale network structures fabricated by selective area MOVPE 415(6) K Hayakawa K Kumakura J Motohisa T Fukui Quantum Dots The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots 421(6) J Ahopelto M Sopanen H Lipsanen J Tulkki Columnar-shaped InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy 427(6) Y Nakata Y Sugiyama K Mukai T Futatsugi H Shoji M Sugawara H Ishikawa N Yokoyama New way to enhance the uniformity of self-organized InAs quantum dots 433(6) H Zhu H Wang Z Wang L Cui S Feng Laser properties of (InGa)As/GaAs self-assembled quantum dots grown on high-index planes 439(6) A Patane A Polimeni M Henini L Eaves P C Main G Hill Volume distribution of InAs/GaAs self-assembled quantum dots 445(6) Y Ebiko S Muto S Itoh D Suzuki H Yamakosi K Shiramine T Haga Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption 451(6) A Patane A Polimeni M Henini L Eaves P C Main M Al-Khafaji A G Cullis Self-organized process of InAs quantum dots monitored by reflectance-difference spectroscopy 457(6) T Kita T Hagihara K Yamashita T Nishino Capacitor feedback in a double quantum dot plane 463(6) Ph Lelong H Sakaki Formation of InGaAs dots on InP substrate with lattice-matching growth condition by droplet heteroepitaxy 469(6) Y Nonogaki T Iguchi S Fuchi R Oga H Moriya Y Fujiwara Y Takeda Radiative lifetimes of spatially indirect excitons in type-II GaSb/GaAs self-assembled quantum dots 475(6) K Suzuki M S Minsky S B Fleischer R A Hogg S Kako E L Hu J E Bowers Y Arakawa Formation of InAs dots including Mn atoms by metalorganic molecular beam epitaxy and etching 481(6) T Tashima H Asahi J Sato K Asami Y K Zhou S Gonda Temperature dependence of threshold current and quantum efficiency of self-formed GaAs island laser on a Si substrate 487(6) Z I Kazi T Egawa T Jimbo M Umeno Photon assisted tunnelling spectroscopy on a double quantum dot 493(6) T Fujisawa T H Oosterkamp W G van der Wiel S Tarucha L P Kouwenhoven Material Growth In situ mesa etching and immediate regrowth in a hydride vapour phase epitaxy reactor 499(6) E Rodriguez Messmer T Lindstrom S Lourdudoss High electron mobility AlInSb/InAsSb heterostructures grown on GaAs substrates by molecular beam epitaxy 505(6) M Kudo T Mishima Photoluminescence study of InP/GaP highly strained quantum wells 511(6) T Kimura H Yaguchi N Usami K Onabe Y Shiraki Scanning tunnelling microscopy observations of indium segregation phenomena on GaInAs layer grown by molecular beam epitaxy 517(6) S Ohkouchi Y Sugimoto Six-inch diameter semi-insulating GaAs crystal grown by the vertical boat method 523(6) K Hashio H Yoshida T Sakurada M Yamashita T Kawase M Kiyama S Sawada R Nakai D Hara Self-limiting submonolayer growth of InP by alternative triethylindium and tertiarybutylphosphine supply in ultra-high vacuum 529(6) N Otsuka J Nishizawa H Kikuchi Y Oyama Thermal cycle annealing and Si doping effects on the crystalline quality of GaAs/Si grown by MBE 535(6) K Baskar H Kawanami I Sakata T Sekigawa Growth of TlInGaP and TlInGaAs for temperature-independent bandgap energy III-V semiconductors 541(6) H Asahi K Takenaka H Koh K Oe K Asami S Gonda Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions 547(6) F Matsukura A Shen Y Sugawara T Omiya Y Ohno H Ohno Enhancement of nitrogen incorporation in GaInNAs grown by MOVPE using tertiarybutylarsine and dimethylhydrazine 553(6) A Moto S Tanaka T Tanabe M Takahashi S Takagishi Miscibility gap calculation for Gal-xInxNyAsl-y including strain effects 559(6) D Schlenker T Miyamoto Z Pan F Koyama K Iga Gallium-doped ZnO for thin film solar cells 565(6) A Jager-Waldau H-J Muffler R Klenk M Kirsch C Kelch M Ch Lux-Steiner Material Characterization Probing new structures and materials using heat pulse techniques 571(8) P Hawker A J Kent A J Naylor I A Pentland M Henini T S Cheng C T Foxon Exciton spin polarization with centre-of-mass dispersion in GaAs/AlGaAs quantum wells 579(6) K Omae S Fujita T Uenoyama Realization of strongly metal-dependent Schottky barrier heights on n-GaAs by an in situ electrochemical process 585(6) C Kaneshiro T Sato H Hasegawa Diagnostic scheme for electrical behaviour of dielectrics/GaAs interfaces based on electroreflectance spectroscopy 591(6) K Ito Y Mochizuki Y Nashimoto M Mizuta A novel hydrogen passivation method for GaAs on Si grown by MOCVD 597(6) G Wang K Ohtsuka T Soga T Jimbo M Umeno Transition from GaAs(001)(2 x 6)-S to (2 x 3)-S surfaces observed by synchrotron radiation photoelectron spectroscopy, x-ray absorption near edge structure, and x-ray standing waves 603(6) S Tsukamoto M Shimoda M Sugiyama Y Watanabe S Maeyama T Ohno N Koguchi Direct evidence for the type-II character of In0.52Al0.48As/AlAs0.56Sb0.44 multiple quantum well structures 609(6) J Ringling L Schrottke H T Grahn Y Kawamura K Yoshimatsu A Kamada N Inoue The negative magneto-resistance in an Si atomic-layer-doped GaAs 615(6) M Katsuno N Sawaki T Suzuki K Hara Anomalous growth temperature dependence of electrical properties of InP-based pseudomorphic resonant tunnelling diodes grown by molecular beam epitaxy 621(6) J Osaka K Maezawa H Matsuzaki Photocapacitance investigation of stoichiometry-dependent deep levels in Sn-doped InP 627(6) Y Oyama J Nishizawa K Kim A Shimizu K Suto Optical characterization of GaInNAs/GaAs quantum well structures 633(6) S Tanaka M Takahashi A Moto T Tanabe S Takagishi K Karatani T Nakanishi M Nakayama Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing 639(6) T Kageyama T Miyamoto S Makino F Koyama K Iga Material Growth and Characterization (Wide Gap and Nitride) Phase separation mechanism around dislocation in an InGaN/GaN quantum well structure 645(6) T Sugahara M Hao T Wang D Nakagawa Y Naoi K Nishino S Sakai Effect of hydrogen on the ECR-MBE growth process of GaN 651(6) Y Chiba T Tominari M Nobata Y Nanishi Regrowth of GaN and AlGaN on grooved stripe structure 657(6) M Ishida K Orita T Hashimoto S Nakamura O Imafuji M Yuri T Sugino K Itoh Observation of intersubband absorption in MOCVD grown AlGaN/GaN MQWs 663(6) N Iizuka N Suzuki Growth and characterization of Si-doped cubic GaN 669(6) H Tanaka A Nakadaira Stacking fault and its effect on the GaN epitaxial growth 675(6) M Hao S Mahanty Y Morishima H Takenaka J Wang S Tottori M Nozaki Y Ishikawa T Sugahara K Nishino Y Naoi S Saki Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour deposition 681(6) H Marchand J P Ibbetson P T Fini S Chichibu S J Rosner S Keller S P DenBaars J S Speck U K Mishra Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapour phase epitaxy 687(6) Y Kawaguchi Y Honda M Yamaguchi K Hiramatsu N Sawaki Preparation of polycrystalline InGaN thin films on indium tin oxide/glass substrates by RF plasma enhanced chemical vapour deposition 693(6) D-C Park H-C Ko S Fujita S Fujita Nucleation issue in the nanoscale selective area growth of II-VI semiconductors 699(6) A Avramescu A Ueta K Uesugi I Suemune Epitaxial growth of ZnSe and ZnCdSe by MBE using a mass spectrometer 705(6) H Okuyama S Kijima Y Sanaka A Ishibashi Growth and optical properties of ZnSl-xTex epilayers by hot-wall epitaxy 711(6) S Nam Y-M Yu C-K Lee O Byungsung K-S Lee Y D Choi H J Yun Y-J Jung C S Kim Single crystal growth of 3C-SiC on 15R-SiC 717(6) S Nakamura T Hatayama K Nishino T Kimoto H Matsunami Effects of oxidation/anneal atmosphere on an SiC MOS interface and MOSFETs 723(6) H Yano F Katafuchi T Kimoto H Matsunami Gating properties of AlN capped Al0.14Ga0.86N/GaN heterojunctions 729(6) P Ramvall P Hacke Y Aoyagi MOCVD growth of nanometre-scale InGaN self-assembling quantum dots 735(6) K Tachibana T Someya Y Arakawa Strain energy distribution in GaN and InGaN quantum dots on AlN buffer layers: a valence-force-field approach 741(6) T Saito Y Arakawa Doping and Processing Codoping in wide band-gap semiconductors 747(10) H Katayama-Yoshida T Nishimatsu T Yamamoto N Orita Photoluminescence from Mg-doped cubic GaN grown by MOVPE 757(6) A Nakadaira H Tanaka High temperature (500 °C) implantation study of P+ and N+ implanted epitaxial N-type 4H-SiC 763(6) M B Scott Y K Yeo R L Hengehold J D Scofield Reactive ion etching of GaN using Cl2/BCl3 769(6) I H Lee Y S Choi K K Youn S J Yu J K Rhee S G Kim Electrical properties of metal/n-GaN and PCVD-SiO2/n-GaN interfaces 775(6) T Sawada M Sawada Y Yamagata K Imai K Suzuki H Tomozawa Effect of defect density on the electrical characteristics of Ni/n-GaN contacts 781(6) K Shiojima J M Woodall C J Eiting P A Grudowski R D Dupuis Ohmic contact materials for p-ZnSe and p-GaN 787(6) Y Koide T Kawakami M Murakami Near-noble transition-metal-based ohmic contacts to p-type InP: comparison of base metals (Ni, Pd) 793(6) A Yamaguchi T Okada Y Iguchi T Saitoh H Asamizu Y Koide M Murakami Surface passivation of GaAs grown on Si by selenium sulphide treatment 799(6) J Arokiaraj K Ohtsuka T Soga T Jimbo M Umeno Two-step GaAs/AlGaAs selective dry etching process to control vertical and lateral recess profile 805(6) T Uda M Nishitsuji K Inoue T Tanaka D Ueda A novel PMMA-swelling technique to fabricate deep sub-micron T-shaped gate MODFETs 811(6) Y Anda T Matsuno M Tanabe T Uda M Nishitsuji K Inoue T Tanaka D Ueda N Hirose T Matsui Effect of high temperature annealing on precipitate formation in a carbon-doped base of InGaP/GaAs HBTs grown by LP-MOCVD 817(6) Q Yang D Scott P Meyer H C Kuo Q J Hartmann J E Baker G E Stillman Mg doping in the MOVPE of AlInP in nitrogen or hydrogen ambient using Cp2Mg 823(6) H Hardtdegen T Hauck D Gauer K Wirtz H Holzbrecher U Breuer D Schmitz M Heuken Late News Formation and optical properties of selectively grown InGaN/GaN nanostructures 829(4) J Wang M Nozaki Y Ishikawa M Lachab R S Qhalid Fareed T Wang S Sakai Extended defect reduction in GaN laterally overgrown on Si(111) 833(4) H Marchand N Zhang L Zhao Y Golan P T Fini J P Ibbetson S Keller S P DenBaars J S Speck U K Mishra Photoassisted anodic etching of n-GaN films in NaOH electrolyte-dependence of carrier concentration of GaN film 837(4) M Ohkubo T Imai Studies of InAs(111) and GaSb(111) thin films grown on LiTaO3(110) substrate by XRD 841(4) W T Yuen S Y Matsuno N Kuze K Kaya H Goto Y Shibata M Tsunashima Y Yamagata Coherent and incoherent excitation of two-dimensional plasmons in AlGaAs/GaAs quantum wells by femtosecond laser pulses 845(4) N Sekine K Hirakawa M Voeburger P Haring-Bolivar H Kurz Bistability of electroluminescence in In0.52Al0.48As/AlAs0.56Sb0.44 type II multiple quantum well diodes 849(4) Y Kawamura K Yoshimatsu N Inoue 26.9 efficient and radiation resistant InGaP/GaAs tandem solar cells 853(4) T Takamoto M Yamaguchi A Khan E Ikeda H Kurita Electrical characteristics of MIS capacitors with AlN gate insulators grown by MBE on 4H-SiC substrate 857(4) K Fukuda T Koizumi H Okumura K Nagai T Sekigawa S Yoshida K Arai I-V characteristics and two-dimensional electron gas transport properties above room temperature in gate-controlled Al0.15Ga0.85N/GaN heterostructure 861(4) N Maeda T Nishida T Saitoh N Kobayashi Electroluminescence of flip-chip-bonded InP-based HEMTs with 0.1 µm gate 865(6) N Shigekawa T Furuta S Kodama T Suemitsu Y Umeda `AND function in Coulomb blockade device 871(4) K Tsukagoshi B W Alphenaar K Nakazato Subject Index 875(10) Author Index 885
H. Sakaki, J. C. Woo, N. Yokoyama and Y. Harayama
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