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E-grāmata: Control Components Using Si, GaAs, and GaN Technologies

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  • Formāts: 324 pages
  • Izdošanas datums: 31-Jan-2014
  • Izdevniecība: Artech House Publishers
  • ISBN-13: 9781608077120
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Control Components Using Si, GaAs, and GaN TechnologiesPalielināt
  • Formāts: 324 pages
  • Izdošanas datums: 31-Jan-2014
  • Izdevniecība: Artech House Publishers
  • ISBN-13: 9781608077120
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Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This resource provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits, and description of fabrication technologies. It provides RF and microwave engineers with a broad view of solid state control circuits including various technologies and their comparison and up to date information.
Preface xi
Chapter 1 Introduction
1(18)
1.1 History of Control Components
1(1)
1.2 Types of Control Components
2(1)
1.3 Solid-State Switching Devices
3(2)
1.4 Design of Control Components
5(4)
1.5 Fabrication of Control Components
9(3)
1.6 Applications
12(2)
1.7 Book Organization
14(5)
References
15(4)
Chapter 2 Control Devices
19(48)
2.1 PIN Diodes
19(5)
2.1.1 Operation of PIN Diodes
19(2)
2.1.2 PIN Diode Models
21(3)
2.2 GaAs MESFETs
24(12)
2.2.1 Operation of MESFETs
24(2)
2.2.2 Linear Switch FET Models
26(7)
2.2.3 Nonlinear Switch FET Models
33(3)
2.3 GaAs HEMTs
36(3)
2.4 GaAs HBTs
39(1)
2.5 GaN HEMTs
39(1)
2.6 CMOS Transistors
40(5)
2.6.1 Operation of CMOS Switch
40(2)
2.6.2 Various Body Floating Techniques
42(2)
2.6.3 CMOS Transistor Models
44(1)
2.7 Other Devices
45(4)
2.7.1 Schottky Diodes
46(3)
2.7.2 Varactor Diodes
49(1)
2.8 Transistor Model Scaling
49(1)
2.9 Biasing of Switching Devices
50(9)
2.9.1 Biasing of PIN Diodes
50(8)
2.9.2 Biasing of Transistors
58(1)
2.10 Switching Speed
59(3)
2.10.1 Switching Speed of PIN Diodes
59(2)
2.10.2 Switching Speed of Transistors
61(1)
2.11 Comparison of Switching Devices
62(5)
References
62(5)
Chapter 3 Switches
67(56)
3.1 Introduction
67(3)
3.1.1 Switch Parameters
67(2)
3.1.2 Devices for Switches
69(1)
3.1.3 Basic Requirements of a Switch for Wireless Applications
69(1)
3.2 Design of Switches
70(8)
3.2.1 Types of Switches
70(2)
3.2.2 Switch Configurations
72(3)
3.2.3 Basic Theory of Switches
75(3)
3.3 Multiport Switches
78(3)
3.3.1 Multithrow Switches
78(1)
3.3.2 Matrix Switches
79(1)
3.3.3 Diversity Switch
79(2)
3.4 High Isolation Switches
81(3)
3.5 Broadband Switches
84(2)
3.6 High-Power Switches
86(8)
3.6.1 Impedance Transformation Technique
88(2)
3.6.2 Stacked FETs Method
90(1)
3.6.3 Resonant Circuit Technique
91(1)
3.6.4 GaN HEMT Switches
92(1)
3.6.5 Power Handling of PIN Diode Switches
93(1)
3.7 Low Distortion Switches
94(2)
3.8 Performance of Switch Circuits
96(14)
3.8.1 PIN Diode Switch Circuits
96(3)
3.8.2 MESFET Switch Circuits
99(2)
3.8.3 HEMT Switch Circuits
101(6)
3.8.4 CMOS Switch Circuits
107(2)
3.8.5 Comparison of Switch Technologies
109(1)
3.9 Novel Switch Configurations
110(3)
3.9.1 Filter-Integrated Switch
110(1)
3.9.2 Redundant Switch
111(1)
3.9.3 Switched Variable Power Amplifier
111(2)
3.9.4 Switches with Integrated Control
113(1)
3.10 Intermodulation Analysis of Switches
113(10)
3.10.1 PIN Diode Switches
114(1)
3.10.2 MESFET Switches
114(1)
References
115(8)
Chapter 4 Phase Shifters
123(84)
4.1 Types of Phase Shifters
123(4)
4.1.1 Digital Phase Shifters
123(3)
4.1.2 Analog Phase Shifters
126(1)
4.1.3 Active Phase Shifters
127(1)
4.2 Theory of Phase Shifters
127(28)
4.2.1 Reflection-Type Phase Shifter
127(6)
4.2.2 Switched-Line Phase Shifter
133(3)
4.2.3 Loaded-Line Phase Shifters
136(6)
4.2.4 Switched-Network Phase Shifters
142(10)
4.2.5 Embedded-Device Phase Shifters
152(3)
4.3 Multibit Phase Shifter Circuits
155(10)
4.3.1 RMS Errors
155(1)
4.3.2 PIN Diode Phase Shifters
156(1)
4.3.3 MESFET/HEMT Phase Shifters
157(6)
4.3.4 CMOS Phase Shifters
163(2)
4.4 Analog Phase Shifters
165(6)
4.4.1 Voltage-Controlled Reflection-Type Phase Shifters
165(1)
4.4.2 Voltage-Controlled Transmission-Type Phase Shifters
166(3)
4.4.3 Analog Varactor Diode Phase Shifters
169(1)
4.4.4 Analog CMOS Phase Shifters
170(1)
4.5 Broadband Phase Shifters
171(9)
4.5.1 GaAs MESFET/HEMT Broadband Phase Shifters
173(6)
4.5.2 Broadband CMOS Phase Shifters
179(1)
4.6 Ultrawideband Phase Shifters
180(5)
4.7 Millimeter-Wave Phase Shifters
185(5)
4.7.1 PIN/Schottky Diode Millimeter-Wave Phase Shifters
185(1)
4.7.2 MESFET/HEMT Millimeter-Wave Phase Shifters
185(4)
4.7.3 CMOS Millimeter-Wave Phase Shifters
189(1)
4.8 Active Phase Shifters
190(17)
4.8.1 Dual-Gate FET Phase Shifters
191(1)
4.8.2 Switchable-Amplifier Phase Shifters
192(1)
4.8.3 Vector Modulator Phase Shifters
192(5)
References
197(10)
Chapter 5 Attenuators
207(46)
5.1 Introduction
207(7)
5.1.1 Types of Attenuators
207(3)
5.1.2 Theory of Attenuators
210(4)
5.1.3 Fabrication of Attenuators
214(1)
5.2 Fixed Value Attenuators
214(2)
5.2.1 Attenuator Pad
214(1)
5.2.2 Temperature Variable Attenuator
215(1)
5.3 Multibit Attenuators
216(6)
5.3.1 PIN Diode Step Attenuators
217(1)
5.3.2 GaAs MMIC Step Attenuators
218(2)
5.3.3 Si CMOS Step Attenuators
220(2)
5.4 Variable Voltage Attenuators
222(14)
5.4.1 PIN Diode Variable Attenuators
223(1)
5.4.2 MESFET Variable Attenuators
224(3)
5.4.3 CMOS Variable Attenuator
227(1)
5.4.4 GaN HEMT Attenuator
228(1)
5.4.5 Linear Voltage Variable Attenuators
229(7)
5.6 Other Attenuator Circuits
236(9)
5.6.1 Reflection-Type Attenuators
236(4)
5.6.2 Balanced Attenuators
240(2)
5.6.3 Frequency Dependent Attenuators
242(2)
5.6.4 Phase Compensated Attenuators
244(1)
5.6.5 CMOS Attenuator with Integrated Switch
245(1)
5.7 Distortion in Attenuators
245(8)
5.7.1 PIN Diode Attenuators
246(1)
5.7.2 FET Attenuators
247(1)
References
248(5)
Chapter 6 Limiters
253(34)
6.1 Introduction
253(6)
6.1.1 Limiter Characterization
254(1)
6.1.2 Limiter Types
255(4)
6.2 PIN Diode Limiters
259(10)
6.2.1 Analysis of PIN Diode Limiter
259(4)
6.2.2 Si PIN Diode Limiters in Microstrip Configuration
263(2)
6.2.3 GaAs PIN Diode Limiters
265(2)
6.2.4 Matched Limiters
267(2)
6.3 Schottky Diode Limiters
269(6)
6.3.1 Analysis of Schottky Diode Limiter
271(2)
6.3.2 Schottky Diode Design and Limiter Configuration
273(1)
6.3.3 Broadband High Power Limiters
274(1)
6.4 Monolithic GaAs Schottky Diode Limiter Circuits
275(7)
6.4.1 Limiting Amplifiers
276(2)
6.4.2 10-W Limiter with Embedded LNA
278(4)
6.5 Other Diode Limiters
282(5)
6.5.1 BiCMOS Diode Limiter
282(1)
6.5.2 GaN Schottky Diode Limiters
283(1)
References
283(4)
APPENDIX A Physical Constants and Frequency Band Designations
287(2)
APPENDIX B Thermal Design of Devices
289(8)
B.1 Thermal Basics
289(2)
B.2 Transistor Thermal Design
291(6)
B.2.1 Cooke Model for Single-Gate Devices
291(1)
B.2.2 Cook Model for Multiple-Gate Devices
292(2)
B.2.3 Pulsed Operation
294(1)
B.2.4 Component Assembly Thermal Design Considerations
295(1)
References
296(1)
About the Author 297(2)
Index 299
Inder Bahl is an IEEE Fellow and a member of the Electromagnetic Academy. He is the editor of the Int. Journal of RF and Microwave Computer-Aided Engineering. He earned his Ph.D. in electrical engineering and has over 40 years of experience working in the microwave field.
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