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Einstein Relation in Compound Semiconductors and Their Nanostructures 2009 ed. [Hardback]

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  • Formāts: Hardback, 458 pages, height x width: 235x155 mm, weight: 881 g, 253 Illustrations, black and white; XX, 458 p. 253 illus., 1 Hardback
  • Sērija : Springer Series in Materials Science 116
  • Izdošanas datums: 20-Nov-2008
  • Izdevniecība: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3540795561
  • ISBN-13: 9783540795568
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Einstein Relation in Compound Semiconductors and Their Nanostructures 2009 ed.Palielināt
  • Formāts: Hardback, 458 pages, height x width: 235x155 mm, weight: 881 g, 253 Illustrations, black and white; XX, 458 p. 253 illus., 1 Hardback
  • Sērija : Springer Series in Materials Science 116
  • Izdošanas datums: 20-Nov-2008
  • Izdevniecība: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3540795561
  • ISBN-13: 9783540795568
Citas grāmatas par šo tēmu:
Permanent link: https://www.kriso.lv/db/9783540795568.html
Keywords:
In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi's, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting applications in the realm of quantum e ect devices. In ultrathin ?lms, due to the reduction of symmetry in the wave-vector space, the motion of the carriers in the direction normal to the ?lm becomes quantized leading to the quantum size e ect. Such systems ?nd extensive applications in quantum well lasers, ?eld e ect transistors, high speed digital networks and also in other low dimensional systems. In quantum wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed. The transport properties of charge carriers in quantum wires, which may be studied by utilizing the similarities with optical and microwave waveguides, are currently being investigated. Knowledge regarding these quantized structures may be gained from original research contributions in scienti c journals, proceedings of international conferences and various - view articles.
1 Basics of the Einstein Relation
1
1.1 Introduction
1
1.2 Generalized Formulation of the Einstein Relation for Multi-Band Semiconductors
2
1.3 Suggestions for the Experimental Determination of the Einstein Relation in Semiconductors Having Arbitrary Dispersion Laws
4
1.4 Summary
7
References
8
2 The Einstein Relation in Bulk Specimens of Compound Semiconductors
13
2.1 Investigation on Tetragonal Materials
13
2.1.1 Introduction
13
2.1.2 Theoretical Background
14
2.1.3 Special Cases for III—V Semiconductors
16
2.1.4 Result and Discussions
19
2.2 Investigation for II—VI Semiconductors
26
2.2.1 Introduction
26
2.2.2 Theoretical Background
27
2.2.3 Result and Discussions
28
2.3 Investigation for Bi in Accordance with the McClure—Choi, the Cohen, the Lax, and the Parabolic Ellipsoidal Band Models
29
2.3.1 Introduction
29
2.3.2 Theoretical Background
29
2.3.3 Result and Discussions
33
2.4 Investigation for IV—VI Semiconductors
34
2.4.1 Introduction
34
2.4.2 Theoretical Background
34
2.4.3 Result and Discussions
35
2.5 Investigation for Stressed Kane Type Semiconductors
35
2.5.1 Introduction
35
2.5.2 Theoretical Background
36
2.5.3 Result and Discussions
37
2.6 Summary
38
2.7 Open Research Problems
38
References
48
3 The Einstein Relation in Compound Semiconductors Under Magnetic Quantization
51
3.1 Introduction
51
3.2 Theoretical Background
52
3.2.1 Tetragonal Materials
52
3.2.2 Special Cases for III—V, Ternary and Quaternary Materials
56
3.2.3 II—VI Semiconductors
63
3.2.4 The Formulation of DMR in Bi
65
3.2.5 IV—VI Materials
75
3.2.6 Stressed Kane Type Semiconductors
75
3.3 Result and Discussions
77
3.4 Open Research Problems
95
References
104
4 The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration
107
4.1 Introduction
107
4.2 Theoretical Background
108
4.2.1 Tetragonal Materials
108
4.2.2 Special Cases for III—V, Ternary and Quaternary Materials
112
4.2.3 II—VI Semiconductors
116
4.2.4 The Formulation of DMR in Bi
118
4.2.5 IV—VI Materials
127
4.2.6 Stressed Kane Type Semiconductors
127
4.3 Result and Discussions
130
4.4 Open Research Problems
150
References
155
5 The Einstein Relation in Compound Semiconductors Under Size Quantization
157
5.1 Introduction
157
5.2 Theoretical Background
158
5.2.1 Tetragonal Materials
158
5.2.2 Special Cases for III—V, Ternary and Quaternary Materials
159
5.2.3 II—VI Semiconductors
162
5.2.4 The Formulation of 2D DMR in Bismuth
163
5.2.5 IV—VI Materials
169
5.2.6 Stressed Kane Type Semiconductors
173
5.3 Result and Discussions
174
5.4 Open Research Problems
189
References
195
6 The Einstein Relation in Quantum Wires of Compound Semiconductors
197
6.1 Introduction
197
6.2 Theoretical Background
198
6.2.1 Tetragonal Materials
198
6.2.2 Special Cases for III—V, Ternary and Quaternary Materials
199
6.2.3 II—VI Materials
202
6.2.4 The Formulation of 1D DMR in Bismuth
203
6.2.5 IV—VI Materials
207
6.2.6 Stressed Kane Type Semiconductors
210
6.2.7 Carbon Nanotubes
211
6.3 Result and Discussions
212
6.4 Open Research Problems
227
References
231
7 The Einstein Relation in Inversion Layers of Compound Semiconductors
235
7.1 Introduction
235
7.2 Theoretical Background
236
7.2.1 Formulation of the Einstein Relation in n-Channel Inversion Layers of Tetragonal Materials
236
7.2.2 Formulation of the Einstein Relation in n-Channel Inversion Layers of III—V, Ternary and Quaternary Materials
241
7.2.3 Formulation of the Einstein Relation in p-Channel Inversion Layers of II—VI Materials
248
7.2.4 Formulation of the Einstein Relation in n-Channel Inversion Layers of IV—VI Materials
250
7.2.5 Formulation of the Einstein Relation in n-Channel Inversion Layers of Stressed III—V Materials
255
7.3 Result and Discussions
260
7.4 Open Research Problems
272
References
277
8 The Einstein Relation in Nipi Structures of Compound Semiconductors
279
8.1 Introduction
279
8.2 Theoretical Background
280
8.2.1 Formulation of the Einstein Relation in Nipi Structures of Tetragonal Materials
280
8.2.2 Einstein Relation for the Nipi Structures of III—V Compounds
281
8.2.3 Einstein Relation for the Nipi Structures of II—VI Compounds
283
8.2.4 Einstein Relation for the Nipi Structures of IV—VI Compounds
285
8.2.5 Einstein Relation for the Nipi Structures of Stressed Kane Type Compounds
288
8.3 Result and Discussions
289
8.4 Open Research Problems
295
References
298
9 The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields
301
9.1 Introduction
301
9.2 Theoretical Background
302
9.2.1 Einstein Relation Under Magnetic Quantization in III—V Superlattices with Graded Interfaces
302
9.2.2 Einstein Relation Under Magnetic Quantization in II—VI Superlattices with Graded Interfaces
304
9.2.3 Einstein Relation Under Magnetic Quantization in IV—VI Superlattices with Graded Interfaces
307
9.2.4 Einstein Relation Under Magnetic Quantization in HgTe/CdTe Superlattices with Graded Interfaces
310
9.2.5 Einstein Relation Under Magnetic Quantization in III—V Effective Mass Superlattices
312
9.2.6 Einstein Relation Under Magnetic Quantization in II—VI Effective Mass Superlattices
314
9.2.7 Einstein Relation Under Magnetic Quantization in IV—VI Effective Mass Superlattices
315
9.2.8 Einstein Relation Under Magnetic Quantization in HgTe/CdTe Effective Mass Superlattices
316
9.2.9 Einstein Relation in III—V Quantum Wire Superlattices with Graded Interfaces
318
9.2.10 Einstein Relation in II—VI Quantum Wire Superlattices with Graded Interfaces
319
9.2.11 Einstein Relation in IV—VI Quantum Wire Superlattices with Graded Interfaces
321
9.2.12 Einstein Relation in HgTe/CdTe Quantum Wire Superlattices with Graded Interfaces
323
9.2.13 Einstein Relation in III—V Effective Mass Quantum Wire Superlattices
324
9.2.14 Einstein Relation in II—VI Effective Mass Quantum Wire Superlattices
326
9.2.15 Einstein Relation in IV—VI Effective Mass Quantum Wire Superlattices
327
9.2.16 Einstein Relation in HgTe/CdTe Effective Mass Quantum Wire Superlattices
328
9.3 Result and Discussions
329
9.4 Open Research Problems
333
References
339
10 The Einstein Relation in Compound Semiconductors in the Presence of Light Waves 341
10.1 Introduction
341
10.2 Theoretical Background
342
10.2.1 The Formulation of the Electron Dispersion Law in the Presence of Light Waves in III-V, Ternary and Quaternary Materials
342
10.2.2 The Formulation of the DMR in the Presence of Light Waves in III-V, Ternary and Quaternary Materials
352
10.3 Result and Discussions
354
10.4 The Formulation of the DMR in the Presence of Quantizing Magnetic Field Under External Photo-Excitation in III-V, Ternary and Quaternary Materials
360
10.5 Theoretical Background
361
10.6 Result and Discussions
363
10.7 The Formulation of the DMR in the Presence of Cross-Field Configuration Under External Photo-Excitation in III-V, Ternary and Quaternary Materials
372
10.8 Theoretical Background
372
10.9 Result and Discussions
376
10.10 The Formulation of the DMR for the Ultrathin Films of III-V, Ternary and Quaternary Materials Under External Photo-Excitation
379
10.11 Result and Discussions
387
10.12 The Formulation of the DMR in QWs of III-V, Ternary and Quaternary Materials Under External Photo-Excitation
389
10.13 Result and Discussions
398
10.14 Summary
401
10.15 Open Research Problem
402
References
407
11 The Einstein Relation in Heavily Doped Compound Semiconductors 413
11.1 Introduction
413
11.2 Theoretical Background
414
11.2.1 Study of the Einstein Relation in Heavily Doped Tetragonal Materials Forming Gaussian Band Tails
414
11.2.2 Study of the Einstein Relation in Heavily Doped III—V, Ternary and Quaternary Materials Forming Gaussian Band Tails
423
11.2.3 Study of the Einstein Relation in Heavily Doped II—VI Materials Forming Gaussian Band Tails
426
11.2.4 Study of the Einstein Relation in Heavily Doped IV—VI Materials Forming Gaussian Band Tails
428
11.2.5 Study of the Einstein Relation in Heavily Doped Stressed Materials Forming Gaussian Band Tails
432
11.3 Result and Discussions
435
11.4 Open Research Problems
439
References
447
12 Conclusion and Future Research 449
Materials Index 453
Subject Index 455