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E-grāmata: Elastic Constants In Heavily Doped Low Dimensional Materials

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The Elastic Constants (EC) is a very important mechanical property of the materials and its significance is already well known in the literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, Lead Germanium Telluride, Zinc and Cadmium Diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed. The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We have discussed the experimental methods of determining the Einstein Relation, Screening Length and EC in this context. This book contains circa200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.The book is written for graduate and post graduate students, researchers, engineers and professionals in the fields of Mechanical Engineering, Electrical and Electronic Engineering, Semiconductors and related areas, Nano-electronics, condensed matter physics, solid state sciences, materials science, nano-science and technology and nano-structured materials in general.
Dedication v
Preface vii
Acknowledgments xxvii
Symbols liii
About the Authors lix
1 The Carrier Contribution to the Elastic Constants in Heavily Doped Kane-type Materials in the Presence of Light Waves
1(232)
1.1 Introduction
1(2)
1.2 Theoretical Background
3(137)
1.2.1 The CEC in the presence of light waves in HD III-V, ternary and quaternary-materials
3(23)
1.2.2 The CECs under magnetic quantization in HD Kane-type materials in the presence of light waves
26(9)
1.2.3 The CECs under crossed-electric and quantizing magnetic fields in HD Kane-type materials in the presence of light waves
35(13)
1.2.4 The CECs in QWs of HD Kane-type materials in the presence of light waves
48(8)
1.2.5 The CECs in doping superlattices of HD Kane-type materials in the presence of light waves
56(10)
1.2.6 The CEC of QDs of HD Kane-type materials in the presence of light waves
66(7)
1.2.7 The magneto CECs in QWs of HD Kane-type materials in the presence of light waves
73(7)
1.2.8 The CECs in accumulation and inversion layers of Kane-type materials in the presence of light waves
80(16)
1.2.9 The CECs in NWs of HD Kane-type materials in the presence of light waves
96(7)
1.2.10 The magneto CECs in accumulation and inversion layers of Kane-type materials in the presence of light waves
103(5)
1.2.11 The magneto CECs in doping superlattices of HD Kane-type materials in the presence of light waves
108(3)
1.2.12 The CECs in QWHD effective mass superlattices of Kane-type materials in the presence of light waves
111(4)
1.2.13 The CECs in NWHD effective mass superlattices of Kane-type materials in the presence of light waves
115(4)
1.2.14 The magneto CECs in HD effective mass superlattices of Kane-type materials in the presence of light waves
119(5)
1.2.15 The magneto CECs in QWHD effective mass superlattices of Kane-type materials in the presence of light waves
124(2)
1.2.16 The CECs in QWHD superlattices of Kane-type materials with graded interfaces in the presence of light waves
126(4)
1.2.17 The CECs in NWHD superlattices of Kane-type materials with graded interfaces in the presence of light waves
130(4)
1.2.18 The CECs in Quantum dot HD superlattices of Kane-type materials with graded interfaces in the presence of light waves
134(1)
1.2.19 The magneto CECs in HD superlattices of Kane-type materials with graded interfaces in the presence of light waves
135(4)
1.2.20 The magneto CEC in QWHD super lattices of Kane-type materials with graded interfaces in the presence of light waves
139(1)
1.3 Few Related Applications
140(20)
1.3.1 Introduction
140(1)
1.3.2 Thermoelectric Power
140(1)
1.3.3 Experimental Determinations of AC44 and AC456
141(1)
1.3.4 Experimental determination of Debye screening length
142(2)
1.3.5 Experimental determination of diffusivity-mobility ratio
144(2)
1.3.6 Measurement of band gap in the presence of light waves
146(4)
1.3.7 Diffusion coefficient of the minority carriers
150(1)
1.3.8 Nonlinear optical response
150(1)
1.3.9 Third-order nonlinear optical susceptibility
150(1)
1.3.10 Generalized Raman gain
151(1)
1.3.11 The plasma frequency
151(1)
1.3.12 The activity coefficient
151(1)
1.3.13 Magneto-thermal effect in quantized structures
152(2)
1.3.14 Normalized Hall coefficient
154(1)
1.3.15 Reflection coefficient
154(1)
1.3.16 Heat capacity
154(1)
1.3.17 Magnetic susceptibilities
155(1)
1.3.18 Faraday rotation
155(1)
1.3.19 Fowler-Nordheim field emission
156(1)
1.3.20 Optical effective mass
156(1)
1.3.21 Einstein's photoemission
157(1)
1.3.22 Righi-Leduc coefficient
158(1)
1.3.23 Electric susceptibility
158(1)
1.3.24 Electric susceptibility mass
158(1)
1.3.25 Electron diffusion thermopower
159(1)
1.3.26 Hydrostatic piezo-resistance coefficient
159(1)
1.3.27 Relaxation time for acoustic mode scattering
159(1)
1.3.28 Gate capacitance
160(1)
1.4 Result and Discussions
160(47)
1.5 Open Research Problems
207(26)
References
216(17)
2 The CECs in HD Kane-type Materials in the Presence of Intense Electric Field
233(64)
2.1 Introduction
233(1)
2.2 Theoretical Background
234(40)
2.2.1 The CECs in the presence of intense electric fields in HD III-V, ternary and quaternary materials
234(11)
2.2.2 The CECs under magnetic quantization in HD Kane-type materials in the presence of intense electric field
245(2)
2.2.3 The CECs in QWs in HD Kane-type materials in the presence of intense electric field
247(1)
2.2.4 The CECs in NWs in HD Kane-type materials in the presence of intense electric field
248(1)
2.2.5 The CECs in QDs in HD Kane-type materials in the presence of intense electric field
249(1)
2.2.6 The magneto CECs in QWs of HD Kane-type materials in the presence of intense electric field
249(1)
2.2.7 The CECs in accumulation and inversion layers of Kane-type materials in the presence of intense electric field
250(3)
2.2.8 The magneto CECs in accumulation and inversion layers of Kane-type materials in the presence of intense electric field
253(1)
2.2.9 The CECs in doping superlattices of HD Kane-type materials in the presence of intense electric field
254(1)
2.2.10 The magneto CECs in doping superlattices of HD Kane-type materials in the presence of intense electric field
255(1)
2.2.11 The CECs in QWHD effective mass superlattices of Kane-type materials in the presence of light waves
256(2)
2.2.12 The magneto CECs in HD effective mass superlattices of Kane-type materials in the presence of intense electric field
258(1)
2.2.13 The CECs in quantum dot HD superlattices of Kane-type materials in the presence of intense electric field
259(2)
2.2.14 The magneto CECs in QWHD effective mass superlattices of Kane-type materials in the presence of light waves
261(1)
2.2.15 The CECs in QWHD superlattices of Kane-type materials with graded interfaces in the presence of intense electric field
262(4)
2.2.16 The CECs in NWHD superlattices of Kane-type materials with graded interfaces in the presence of intense electric field
266(3)
2.2.17 The CECs in quantum dot HD superlattices of Kane-type materials with graded interfaces in the presence of intense electric field
269(1)
2.2.18 The magneto CECs in HD superlattices of Kane-type materials with graded interfaces in the presence of intense electric field
270(4)
2.2.19 The magneto CECs in QWHD superlattices of Kane-type materials with graded interfaces in the presence of intense electric field
274(1)
2.3 Result and Discussions
274(21)
2.4 Open Research Problems
295(2)
References
296(1)
3 The CEC in Quantum Wells (QWs) of Heavily Doped (HD) Non-Parabolic Materials
297(132)
3.1 Introduction
297(3)
3.2 Theoretical Background
300(92)
3.2.1 The CECs in quantum wells (QWs) of HD nonlinear optical materials
300(15)
3.2.2 The CECs in QWs of HD III-V materials
315(17)
3.2.3 The CECs in QWs of HD II-VI materials
332(3)
3.2.4 The CECs in QWs of HD IV-VI materials
335(18)
3.2.5 The CECs in QWs of HD-stressed Kane-type materials
353(7)
3.2.6 The CECs in QWs of HD Te
360(3)
3.2.7 The CECs in QWs of HD gallium phosphide
363(5)
3.2.8 The CECs in QWs of HD platinum antimonide
368(5)
3.2.9 The CECs in QWs of HD bismuth telluride
373(2)
3.2.10 The CECs in QWs of HD germanium
375(9)
3.2.11 The CECs in QWs of HD gallium antimonide
384(3)
3.2.12 The CECs in QWs of HD II-V materials
387(1)
3.2.13 The CECs in QWs of HD lead germanium telluride
388(2)
3.2.14 The CECs in QWs of HD zinc and cadmium diphosphides
390(2)
3.3 Results and Discussion
392(29)
3.4 Open Research Problems
421(8)
References
422(7)
4 The CECs in Nanowires (NWs) of Heavily Doped (HD) Non-Parabolic Materials
429(62)
4.1 Introduction
429(41)
4.1.1 The CECs in NWs of HD nonlinear optical materials
430(2)
4.1.2 The CECs in NWs of HD III-V materials
432(9)
4.1.3 The CECs in NWs of HD II-VI materials
441(2)
4.1.4 The CECs in NWs of HD IV-VI materials
443(6)
4.1.5 The CECs in NWs of HD stressed Kane type materials
449(2)
4.1.6 The CECs in NWs of HD Te
451(1)
4.1.7 The CECs in NWs of HD gallium phosphide
452(2)
4.1.8 The CECs in NWs of HD platinum antimonide
454(2)
4.1.9 The CECs in NWs of HD bismuth telluride
456(1)
4.1.10 The CECs in NWs of HD germanium
457(4)
4.1.11 The CECs in NWs of HD galium antimonide
461(1)
4.1.12 The CECs in NWs of HD II-V materials
462(4)
4.1.13 The CECs in NWs of HD lead germanium telluride
466(2)
4.1.14 The CECs in NWs of HD zinc and cadmium diphosphides
468(2)
4.2 Results and Discussion
470(17)
4.3 Open Research Problems
487(4)
References
488(3)
5 The CECs in Quantum Dots of Heavily Doped Non-Parabolic Materials
491(42)
5.1 Introduction
491(1)
5.2 Theoretical Background
492(34)
5.2.1 The CECs in QD of HD nonlinear optical materials
492(1)
5.2.2 The CECs in QD of HD III-V materials
493(10)
5.2.3 The CECs in QD of HD II-VI materials
503(2)
5.2.4 The CECs in QD of HD IV-VI materials
505(3)
5.2.5 The CECs in QD of HD stressed Kane-type materials
508(1)
5.2.6 The CECs in QD of HD Te
509(1)
5.2.7 The CECs in QD of HD gallium Phosphide
510(2)
5.2.8 The CECs in QD of HD platinum antimonide
512(1)
5.2.9 The CECs in QD of HD bismuth telluride
513(1)
5.2.10 The CECs in QD of HD germanium
514(2)
5.2.11 The CECs in QD of HD gallium antimonide
516(5)
5.2.12 The CECs in QD of HD II-V materials
521(1)
5.2.13 The CECs in QD of HD lead germanium telluride
522(2)
5.2.14 The CECs in QD of HD zinc and cadmium diphosphides
524(2)
5.3 Summary and Conclusion
526(1)
5.4 Open Research Problems
527(6)
References
529(4)
6 The CECs in Heavily Doped (HD) Non-Parabolic Materials under Magnetic Quantization
533(58)
6.1 Introduction
533(2)
6.2 Theoretical Background
535(30)
6.2.1 The CECs in HD nonlinear optical materials under magnetic quantization
535(4)
6.2.2 The CECs in HD III-V materials under magnetic quantization
539(7)
6.2.3 The CECs in HD II-VI materials under magnetic quantization
546(1)
6.2.4 The CECs in HD IV-VI materials under magnetic quantization
547(8)
6.2.5 The CECs in HD-stressed Kane-type materials under magnetic quantization
555(1)
6.2.6 The CECs in HD Te under magnetic quantization
556(1)
6.2.7 The CECs in HD gallium phosphide under magnetic quantization
557(1)
6.2.8 The CECs in HD platinum antimonide under magnetic quantization
558(1)
6.2.9 The CECs in HD bismuth telluride under magnetic quantization
559(1)
6.2.10 The CECs in HD germanium under magnetic quantization
560(1)
6.2.11 The CECs in HD gallium antimonide under magnetic quantization
561(1)
6.2.12 The CECs in HD II-V materials under magnetic quantization
562(2)
6.2.13 The CECs in HD lead germanium telluride under magnetic quantization
564(1)
6.3 Results and Discussion
565(22)
6.4 Open Research Problems
587(4)
References
588(3)
7 The CECs in HDs under Cross-Fields Configuration
591(56)
7.1 Introduction
591(1)
7.2 Theoretical Background
592(16)
7.2.1 The CECs in HD nonlinear optical materials under cross-fields configuration
592(4)
7.2.2 The CECs in HD Kane-type III-V materials under cross-fields configuration
596(4)
7.2.3 The CECs in HD II-VI materials under cross-fields configuration
600(2)
7.2.4 The CECs in HD IV-VI materials under cross-fields configuration
602(3)
7.2.5 The CECs in HD-stressed Kane-type materials under cross-fields configuration
605(3)
7.3 Results and Discussion
608(36)
7.4 Open Research Problems
644(3)
References
644(3)
8 Conclusion and Scope for Future Research
647(6)
References
650(3)
9 Appendix A: The CECs in QWs of Heavily Doped (HD) Non-Parabolic Materials under Magneto-Size Quantization
653(20)
9.1 Introduction
653(1)
9.2 Theoretical Background
654(13)
9.2.1 The CECs in QWs of HD nonlinear optical materials under magneto-size quantization
654(1)
9.2.2 The CECs in QWs of HD III-V materials under magneto-size quantization
655(2)
9.2.3 The CECs in QWs of HD II-VI materials under magneto-size quantization
657(1)
9.2.4 The CECs in QWs of HD IV-VI materials under magneto size-quantization
658(3)
9.2.5 The CECs in QWs of HD-stressed Kane-type materials under magneto-size quantization
661(1)
9.2.6 The CECs in QWs of HD Te under magneto-size quantization
661(1)
9.2.7 The CECs in QWs of HD gallium phosphide under magneto-size quantization
662(1)
9.2.8 The CECs in QWs of HD platinum antimonide under magneto-size quantization
663(1)
9.2.9 The CECs in QWs of HD bismuth telluride under magneto-size quantization
663(1)
9.2.10 The CECs in QWs of HD germanium under magneto-size quantization
664(1)
9.2.11 The CECs in QWs of HD gallium antimonide under magneto-size quantization
665(1)
9.2.12 The CECs in QWs of HD II-V materials under magneto-size quantization
665(1)
9.2.13 The CECs in QWs of HD lead germanium telluride under magneto-size quantization
666(1)
9.3 Summary and Conclusion
667(1)
9.4 Open Research Problems
668(5)
References
669(4)
10 Appendix B: The CECs in Heavily Doped Ultra-Thin Films (HDUFs) under Cross-Fields Configuration
673(12)
10.1 Introduction
673(1)
10.2 Theoretical Background
674(7)
10.2.1 The CECs in heavily doped ultra-thin films (HDUFs) of nonlinear optical materials under cross-fields configuration
674(1)
10.2.2 The CECs' in HDUFs of III-V materials under cross-fields configuration
675(3)
10.2.3 The CECs in HDUFs of II-VI materials under cross-fields configuration
678(1)
10.2.4 The CECs in HDUFs of IV-VI CECs under cross-fields configuration
679(1)
10.2.5 The CECs in HDUFs of stressed materials under cross-fields configuration
680(1)
10.3 Summary and Conclusion
681(1)
10.4 Open Research Problems
682(3)
References
683(2)
11 Appendix C: The Carrier Contribution to the Elastic Constants in Doping Superlattices of HD Non-Parabolic Materials
685(32)
11.1 Introduction
685(1)
11.2 Theoretical Background
686(17)
11.2.1 The CECs in doping superlattices of HD nonlinear optical semiconductors
686(3)
11.2.2 The CECs in doping superlattices of HD III-V, Ternary, and quaternary materials
689(6)
11.2.3 The CECs in doping superlattices of HD II-VI materials
695(2)
11.2.4 The CECs in doping superlattices of HD IV-VI materials
697(4)
11.2.5 The CECs in doping superlattices of HD-stressed Kane-type materials
701(2)
11.3 Results and Discussion
703(11)
11.4 Open Research Problems
714(3)
References
715(2)
12 Appendix D: The Carrier Contribution to the Elastic Constants in Doping Superlattices of HD Non-Parabolic Materials under Magnetic Quantization
717(14)
12.1 Introduction
718(1)
12.2 Theoretical Background
718(9)
12.2.1 The CECs in doping superlattices of HD nonlinear optical materials under magnetic quantization
718(1)
12.2.2 The DR in doping superlattices of HD III-V, ternary and quaternary materials under magnetic quantization
719(3)
12.2.3 The CECs in doping superlattices of HD II-VI materials under magnetic quantization
722(2)
12.2.4 The CECs in doping superlattices of HD IV-VI materials under magnetic quantization
724(1)
12.2.5 The CECs in doping superlattices of HD stressed Kane-type materials under magnetic quantization
725(2)
12.3 Summary and Conclusion
727(1)
12.4 Open Research Problems
728(3)
References
728(3)
13 Appendix E: The Carrier Contribution to the Elastic Constants in Accumulation and Inversion Layers of Non-Parabolic Materials
731(46)
13.1 Introduction
731(1)
13.2 Theoretical Background
732(20)
13.2.1 The CECs in accumulation and inversion layers of nonlinear optical materials
732(4)
13.2.2 The CECs in accumulation and inversion layers of III-V, ternary, and quaternary materials
736(7)
13.2.3 The CECs in accumulation and inversion layers of II-VI materials
743(2)
13.2.4 The CECs in accumulation and inversion layers of IV-VI materials
745(2)
13.2.5 The CECs in accumulation and inversion layers of stressed Kane-type materials
747(3)
13.2.6 The CECs in accumulation and inversion layers of germanium
750(2)
13.3 Results and Discussion
752(21)
13.4 Open Research Problems
773(4)
References
774(3)
14 Appendix F: The Carrier Contribution to the Elastic Constants in Accumulation and Inversion Layers of Non-Parabolic Materials under Magnetic Quantization
777(16)
14.1 Introduction
777(1)
14.2 Theoretical Background
778(10)
14.2.1 The CECs in accumulation and inversion layers of nonlinear optical materials under magnetic quantization
778(1)
14.2.2 The CECs in accumulation and inversion layers of III-V materials under magnetic quantization
779(4)
14.2.3 The CECs in accumulation and inversion layers of II-VI materials under magnetic quantization
783(1)
14.2.4 The CECs in accumulation and inversion layers of IV-VI materials under magnetic quantization
784(1)
14.2.5 The CECs in accumulation and inversion layers of stressed Kane-type materials under magnetic quantization
785(2)
14.2.6 The CECs in accumulation and inversion layers of germanium under magnetic quantization
787(1)
14.3 Summary and Conclusion
788(1)
14.4 Open Research Problems
789(4)
References
790(3)
15 Appendix G: The Carrier Contribution to the Elastic Constants in Quantum Well Heavily Doped Superlattices
793(28)
15.1 Introduction
793(2)
15.2 Theoretical Background
795(22)
15.2.1 The CECs in III-V quantum well HD superlattices with graded interfaces
795(4)
15.2.2 The CECs in II-VI quantum well HD superlattices with graded interfaces
799(2)
15.2.3 The CECs in IV-VI quantum well HD superlattices with graded interfaces
801(2)
15.2.4 The CECs in HgTe/CdTe quantum well HD superlattices with graded interfaces
803(3)
15.2.5 The CECs in strained layer quantum well HD superlattices with graded interfaces
806(2)
15.2.6 The CECs in III-V quantum well HD effective mass superlattices
808(3)
15.2.7 The CECs in II-VI quantum well HD effective mass superlattices
811(1)
15.2.8 The CECs in IV-VI quantum well HD effective mass superlattices
812(2)
15.2.9 The CECs in HgTe/CdT equantum well HD effective mass superlattices
814(1)
15.2.10 The CECs in strained layer quantum well HD effective mass superlattices
815(2)
15.3 Summary and Conclusion
817(1)
15.4 Open Research Problem
817(4)
References
817(4)
16 Appendix H: The Carrier Contribution to the Elastic Constants in Quantum Wire Heavily Doped Superlattices
821(12)
16.1 Introduction
821(1)
16.2 Theoretical Background
821(10)
16.2.1 The CECs in III-V quantum wire HD superlattices with graded interfaces
821(1)
16.2.2 The CECs in II-VI quantum wire HD superlattices with graded interfaces
822(1)
16.2.3 The CECs in IV-VI quantum wire HD superlattices with graded interfaces
823(1)
16.2.4 The CECs in HgTe/CdTe quantum wire HD superlattices with graded interfaces
824(1)
16.2.5 The CECs in strained layer quantum wire HD superlattices with graded interfaces
825(1)
16.2.6 The CECs in III-V quantum wire HD effective mass superlattices
826(1)
16.2.7 The CECs in II-VI quantum wire HD effective mass superlattices
827(1)
16.2.8 The CECs in IV-VI quantum wire HD effective mass superlattices
828(1)
16.2.9 The CECs in HgTe/CdTe quantum wire HD effective mass superlattices
829(1)
16.2.10 The CECs in strained layer quantum wire HD effective mass superlattices
830(1)
16.3 Summary and Conclusion
831(1)
16.4 Open Research Problem
832(1)
References
832(1)
17 Appendix I: The Carrier Contribution to the Elastic Constants in Quantum Dot Heavily Doped Superlattices
833(10)
17.1 Introduction
833(1)
17.2 Theoretical Background
833(7)
17.2.1 The CECs in III-V quantum dot HD superlattices with graded interfaces
833(1)
17.2.2 The CECs in II-VI quantum dot HD superlattices with graded interfaces
834(1)
17.2.3 The CECs in IV-VI quantum dot HD superlattices with graded interfaces
835(1)
17.2.4 The CECs in HgTe/CdTe quantum dot HD superlattices with graded interfaces
835(1)
17.2.5 The CECs in strained layer quantum dot HD superlattices with graded interfaces
836(1)
17.2.6 The CECs in III-V quantum dot HD effective mass superlattices
837(1)
17.2.7 The CECs in II-VI quantum dot HD effective mass superlattices
837(1)
17.2.8 The CECs in IV-VI quantum dot HD effective mass superlattices
838(1)
17.2.9 The CECs in HgTe/CdTe quantum dot HD effective mass superlattices
838(1)
17.2.10 The CECs in strained layer quantum dot HD effective mass superlattices
839(1)
17.3 Summary and Conclusion
840(1)
17.4 Open Research Problem
840(3)
References
841(2)
18 Appendix J: The Carrier Contribution to the Elastic Constants in Heavily Doped Superlattices under Magnetic Quantization
843(24)
18.1 Introduction
843(1)
18.2 Theoretical Background
843(21)
18.2.1 The CECs in III-V HD superlattices with graded interfaces under magnetic quantization
843(4)
18.2.2 The CECs in II-VI HD superlattices with graded interfaces under magnetic quantization
847(3)
18.2.3 The CECs in IV-VI HD superlattices with graded interfaces under magnetic quantization
850(2)
18.2.4 The CECs in HgTe/CdTe HD superlattices with graded interfaces under magnetic quantization
852(3)
18.2.5 The CECs in strained layer HD superlattices with graded interfaces under magnetic quantization
855(2)
18.2.6 The CECs in III-V HD effective mass superlattices under magnetic quantization
857(1)
18.2.7 The CECs in II-VI HD effective mass superlattices under magnetic quantization
858(2)
18.2.8 The CECs in II-VI HD effective mass superlattices under magnetic quantization
860(1)
18.2.9 The CECs in HgTe/CdTe HD effective mass superlattices under magnetic quantization
861(2)
18.2.10 The CECs in strained layer HD effective mass superlattices under magnetic quanitization
863(1)
18.3 Summary and Conclusion
864(1)
18.4 Open Research Problems
865(2)
References
865(2)
19 Appendix K: The Carrier Contribution to the Elastic Constants in Quantum Well Heavily Doped Superlattices under Magnetic Quantization
867(10)
19.1 Introduction
867(1)
19.2 Theoretical Background
867(7)
19.2.1 The CECs in III-V quantum well HD superlattices with graded interfaces under magnetic quantization
867(1)
19.2.2 The CECs in II-VI quantum well HD superlattices with graded interfaces under magnetic quantization
868(1)
19.2.3 The CECs in IV-VI quantum well HD superlattices with graded interfaces under magnetic quantization
869(1)
19.2.4 The CECs in HgTe/CdTe quantum well HD superlattices with graded interfaces under magnetic quantization
869(1)
19.2.5 The CECs in strained-layer quantum well HD superlattices with graded interfaces under magnetic quantization
870(1)
19.2.6 The CECs in III-V quantum well HD effective mass superlattices under magnetic quantization
871(1)
19.2.7 The CECs in II-VI quantum well HD effective mass superlattices under magnetic quantization
871(1)
19.2.8 The CECs in IV-VI quantum well HD effective mass superlattices under magnetic quantization
872(1)
19.2.9 The CECs in HgTe/CdTe quantum well HD effective mass superlattices under magnetic quantization
873(1)
19.2.10 The CECs in strained-layer quantum well HD effective mass superlattices under magnetic quantization
873(1)
19.3 Summary and Conclusion
874(1)
19.4 Open Research Problems
875(2)
References
875(2)
20 Appendix L: The Carrier Contribution to the Elastic Constants in Low-Dimensional Heavily Doped Systems in the Presence of Magnetic Field
877
20.1 Introduction
877(1)
20.2 Theoretical Background
878(92)
20.2.1 The CECs in quantum wells of HD III-V, ternary, and quaternary materials in the presence of magnetic field
878(13)
20.2.2 The CECs in nanowires of HD III-V materials in the presence of magnetic field
891(8)
20.2.3 The CECs in quantum dot of HD III-V materials in the presence of magnetic field
899(8)
20.2.4 The CECs in quantum wells of HD III-V materials in the presence of cross-fields
907(2)
20.2.5 The CECs in nanowires of HD III-V materials in the presence of cross-fields
909(2)
20.2.6 The CECs in quantum dot of HD III-V materials in the presence of cross-fields
911(2)
20.2.7 The CECs in quantum wells of HD IV-VI materials in the presence of magnetic field
913(16)
20.2.8 The CECs in nanowires of HD IV-VI materials in the presence of magnetic field
929(10)
20.2.9 The CECs in quantum dot of HD IV-VI materials in the presence of magnetic field
939(9)
20.2.10 The CECs in cylindrical quantum dot of HD III-V materials in the presence of crossed electric and magnetic fields
948(6)
20.2.11 The CECs in quantum wells of HD III-V materials in the presence of arbitrarily oriented magnetic field
954(16)
20.3 Summary and Conclusion
970(1)
20.4 Open Research Problems
970
References
972
Professor Kamakhya Prasad Ghatak (h-index-34, i-10 index-168, maximum citation of a research paper = 359 & total citations-5297) obtained his PhD (Tech) degree from the famous Institute of Radio Physics and Electronics of the University of Calcutta in 1988 on the basis of 27 published research papers in eminent SCI journals which is still a record of the said Institute.

He was the first recipient of the Degree of Doctor of Engineering of Jadavpur University, Kolkata in 1991 since the University inception in 1955 and in the same year he received the INSA visiting fellowship to IIT-Kharagpur.

He was the first recipient of the Degree of Doctor of Engineering of Jadavpur University, Kolkata in 1991 since the University inception in 1955 and in the same year he received the INSA visiting fellowship to IIT-Kharagpur. Prof. Ghatak is the principal co-author of more than 400 research papers in SCI journals and 60 research papers in the proceedings of the conferences of SPIE and MRS held in USA. Prof. Ghatak is the Principal co-author of 7 monographs on various topics of Nano Science and Technology from Springer-Verlag Germany (Vol.170 in Solid State Science, Vols. 116, 137 and 167 in Materials Science, Vols. 255 and 260 in Tracts in Modern Physics (TMP) , 1 in Nano structured Science and Technology series) and vol. 1 in Nano-materials series of De Gruyter, Germany. He is the solo Author of Vols. 262 and 265 in TMP of the Springer-Verlag, Germany and two monographs (vols. 7 and 8) in the Series on the Foundations of Natural Science and Technology of World Scientific. He is the Principal Editor of the two edited monographs in series in Nanotechnology of NOVA, USA. This first time achievement of Prof. Ghatak is still a record in West Bengal, India. The score in Vidwan portal unit of Central Government of India, of Prof. K P Ghatak is 8.9 out of 10, the highest score among the nano-technologists of private engineering colleges and Universities in West Bengal, India.

Prof. Ghatak has successfully supervised more than 30 PhD students in different topics of Nanotechnology/Materials Science and the list includes Director, Vice-Chancellor, Principal and Professor of different reputed Institute, University and College respectively.

The AICTE has selected the first R & D project in his life for the best project award in Electronics and second best award considering all the branches of Engineering for the year 2006. In 2011, the UGC awarded a research project to him and placed him at the top in the list of awardees. He is the first recipient of the academic excellence award of the University of Engineering & Management, Kolkata from the Governor of West Bengal in its first convocation in 2017.

He was Assistant Professor in the Department of Radio physics and Electronics of the University of Calcutta from 1983-1987, Associate Professor in the Department of ETCE of Jadavpur University from 1987-1994, Professor and HOD of Electronic Science of the University of Calcutta from 1994-2012, HOD and Dean of the National Institute of Technology, Agartala from 2012-2014 and from January 2015 he has joined in the IEM UEM group, Kolkata as Senior Professor and Dean Engineering. He was at the top of the merit lists in all the above cases.

He is the referee of different reputed International Journals and his present research interest is Quantized Structures. His brief CV has been enlisted in many biographical references of USA and UK.

Professor Madhuchanda Mitra received her BTech, MTech and PhD (Tech) degrees in 1987, 1989 and 1998, respectively, from the University of Calcutta, Kolkata, India. She is a recipient of "Griffith Memorial Award" of the University of Calcutta. She is the principal co-author of 150 scientific research papers in International peer reviewed journals and is the supervisor of sixteen PhD candidates. Her present research interests are nano science and technology, identification of different biomarkers and biomedical signal processing which includes feature extraction, compression, encryption and classification of ECG and PPG signals. At present she is Professor in the Department of Applied Physics, University of Calcutta, India, where she has been actively engaged in both teaching and research in Instrumentation Engineering.