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E-grāmata: Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes

Edited by (University of Petroleum and Energy Studies, India), Edited by (Assistant Professor University School of Information and Communication Technology Gautam Buddha University Greater Noida, Uttar Pradesh India), Edited by , Edited by
  • Formāts: 306 pages
  • Izdošanas datums: 31-Aug-2022
  • Izdevniecība: CRC Press
  • Valoda: eng
  • ISBN-13: 9781000640274
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  • Formāts: 306 pages
  • Izdošanas datums: 31-Aug-2022
  • Izdevniecība: CRC Press
  • Valoda: eng
  • ISBN-13: 9781000640274
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This book will give insight into the emerging semiconductor devices from their applications in electronic circuits. This book discusses the challenges in the field of engineering and applications of advanced low-power devices.

This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices.

Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject.

This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.

1. Role of TFET Devices and Their Performance Analysis for Wireless Communications.
2. Modeling and Simulation of Emerging Low-Power Devices.
3. Tunnel Field-Effect Transistor: An Energy-Efficient Semiconductor Device.
4. Analytical Modeling of Surface Potential of a Double-Gate Heterostructure PNPN Tunnel FET.
5. Impact of Semiconductor Materials and Architectural Design on TFET Device Performance.
6. Performance Analysis of Emerging Low-Power Junctionless Tunnel FETs.
7. Recent Developments in Schottky Diodes and Their Applications.
8. Numerical Study of a Symmetric Underlap S/D High-? Spacer on JAM-GAA FinFET for Low-Power Applications.
9. Potential Prospects of Negative Capicitance Field Effect Transistors.
10. Memory Designing Using Low-Power FETs for Future Technology Nodes.
11. TFET-Based Flash Analog-to-Digital Converter.
12. Demand of Low-Power-Driven FET as Biosensors in Biomedical Applications.
13. 2D Materials for Spin Orbital Torque MRAM: A Path toward Neuromorphic Computing.
Dr. Shubham Tayal is an Assistant Professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India.

Dr. Abhishek Kumar Upadhyay s working as Scientific Staff in the Institute for Fundamentals of Electrical Engineering and Electronics, Technische Universität, D-01062, Dresden, Germany.

Mr. Deepak Kumar works as Asst. Professor (Senior scale) in the Department of Electrical and Electronics Engineering at University of Petroleum and energy studies (UPES), Dehradun, India.

Dr. Shiromani Balmukund Rahi is jointly working with Professor S.C Misra (Indian Institute of Technology Kanpur India) for the development of IoTs for smart applications and Dr Naima Guenifi (LEA Electronics Department, University Mostefa Benboulaid of Algeria) for the development of ultra-low power devices such as Tunnel FETs and Negative Capacitance FETs.