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E-grāmata: Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing

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  • Formāts: EPUB+DRM
  • Izdošanas datums: 12-Feb-2021
  • Izdevniecība: Springer Verlag, Singapore
  • Valoda: eng
  • ISBN-13: 9789811597664
  • Formāts - EPUB+DRM
  • Cena: 130,27 €*
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  • Formāts: EPUB+DRM
  • Izdošanas datums: 12-Feb-2021
  • Izdevniecība: Springer Verlag, Singapore
  • Valoda: eng
  • ISBN-13: 9789811597664

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This book highlights emerging trends in terahertz engineering and system technologies,  mainly, devices, advanced materials, and various applications in THz technology. It includes advanced topics such as terahertz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by use of  machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, THZ imaging system for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics and the intended audience is both academic and professional.


THz Advanced Medical Imaging

Design and Development of Wide Band Gap Semiconductor Based THz Solid State Source

Terahertz Optical Asymmetric Demultiplexer (TOAD) Based Switch in Computing, Communication and Control

Pattern Recognition and Tomographic Reconstruction for THz Biomedical Imaging by Machine Learning and Artificial Intelligence

Wearable Devices and IoT

THz in Biotechnological Advances

Novel materials and engineered structures in THz photonics

Emerging trends in THz modeling

Innovative fabrication technologies for novel THz devices

Photonics for futuristic applications: THz sources, optical communications, imaging, detectors and sensors, optical data storage and displays, medical optics and biophotonics

Dr. Arindam Biswas received his M.Tech. in Radio Physics and Electronics from the University of Calcutta, India, in 2010, and Ph.D. from NIT Durgapur, in 2013. He was a Postdoctoral Researcher at Pusan National University, South Korea, under the prestigious BK21PLUS Fellowship. He was a Visiting Professor at Research Institute of Electronics, Shizuoka University, Japan. Currently, Dr. Biswas is working as an Assistant Professor in the School of Mines and Metallurgy, Kazi Nazrul University, Asansol, West Bengal, India. His research interests are in the area of carrier transport in low-dimensional systems and electronic devices, nonlinear optical communications and THz semiconductor sources. 





 Dr. Amit Banerjee, is a Scientific Advisor Microelectronic Technologies & Devices, Keynote Speaker, Scientific Author & Editor. He joined the Advanced Device Research Division, Research Institute of Electronics, Shizuoka University, Japan as a Scientific Researcher in 2016. He later joined the Microelectronic Technologies & Devices, Department of Electrical and Computer Engineering of the prestigious National University of Singapore, as Scientist in 2017. Currently Amit is member of 30+ international advisory boards, of MNCs and start-ups, technical program committees, in various countries, Amit received Ph.D. degree in Semiconductor Technology from Energy Research Unit, Indian Association for the Cultivation of Science (Govt. of India) and has extensively worked on design and development of high vacuum plasma CVD reactors. His recent work on antenna-coupled microbolometer arrays, are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes,  with commercial viability as on-chip integrable detector arrays for biomedical imaging. Amit has co-authored several scientific papers, received seven national/international awards and co-edited five books.  . 





Dr. Aritra Acharyya obtained his Ph.D. from the Institute of Radio Physics and Electronics, University of Calcutta. He is currently working as an Assistant Professor in the Department of Electronics and Communication at Cooch Behar Government Engineering College, West Bengal. His research interests are in the area of high-frequency semiconductor devices. 





Prof. Hiroshi Inokawa received his Ph.D. in Electrical Engineering from Kyoto University, Japan. In 1985, he joined the Atsugi Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation (NTT), Kanagawa, Japan. Since then, he has been engaged in the research and development of scaled-down CMOS devices and silicon single-electron devices. During the course of his research, he invented the basic structure of FinFET and single-electron multiple-valued logic. In 2006, he became a Professor of the Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan, where he has been studying nanodevices for advanced circuits and systems.