Atjaunināt sīkdatņu piekrišanu

E-grāmata: Handbook of GaN Semiconductor Materials and Devices

Edited by (University of Michigan, Ann Arbor, USA), Edited by (National Chiao-Tung University, Taiwan), Edited by (Hebei University of Technology, China), Edited by (Peking University, Bejing, PR of China)
  • Formāts - PDF+DRM
  • Cena: 57,60 €*
  • * ši ir gala cena, t.i., netiek piemērotas nekādas papildus atlaides
  • Ielikt grozā
  • Pievienot vēlmju sarakstam
  • Šī e-grāmata paredzēta tikai personīgai lietošanai. E-grāmatas nav iespējams atgriezt un nauda par iegādātajām e-grāmatām netiek atmaksāta.

DRM restrictions

  • Kopēšana (kopēt/ievietot):

    nav atļauts

  • Drukāšana:

    nav atļauts

  • Lietošana:

    Digitālo tiesību pārvaldība (Digital Rights Management (DRM))
    Izdevējs ir piegādājis šo grāmatu šifrētā veidā, kas nozīmē, ka jums ir jāinstalē bezmaksas programmatūra, lai to atbloķētu un lasītu. Lai lasītu šo e-grāmatu, jums ir jāizveido Adobe ID. Vairāk informācijas šeit. E-grāmatu var lasīt un lejupielādēt līdz 6 ierīcēm (vienam lietotājam ar vienu un to pašu Adobe ID).

    Nepieciešamā programmatūra
    Lai lasītu šo e-grāmatu mobilajā ierīcē (tālrunī vai planšetdatorā), jums būs jāinstalē šī bezmaksas lietotne: PocketBook Reader (iOS / Android)

    Lai lejupielādētu un lasītu šo e-grāmatu datorā vai Mac datorā, jums ir nepieciešamid Adobe Digital Editions (šī ir bezmaksas lietotne, kas īpaši izstrādāta e-grāmatām. Tā nav tas pats, kas Adobe Reader, kas, iespējams, jau ir jūsu datorā.)

    Jūs nevarat lasīt šo e-grāmatu, izmantojot Amazon Kindle.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.

Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China.

Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.

Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.

Bo Shen is the Cheung Kong Professor at Peking University in China.
Series Preface vii
Foreword ix
Preface xi
Editors xv
Contributors xvii
SECTION I Fundamentals
1 III-Nitride Materials and Characterization
3(50)
Bo Shen
Ning Tang
XinQiang Wang
ZhiZhong Chen
Fujun Xu
XueLin Yang
Tongjun Yu
Jiejun Wu
ZhiXin Qin
WeiYing Wang
YuXia Feng
WeiKun Ge
2 Microstructure and Polarization Properties of III-Nitride Semiconductors
53(34)
Fernando A. Ponce
3 Optical Properties of III-Nitride Semiconductors
87(30)
Plamen P. Paskov
Bo Monemar
4 Electronic and Transport Properties of III-Nitride Semiconductors
117(26)
Yuh-Renn Wu
SECTION II Growth and Processing
5 Growth Technology for GaN and A1N Bulk Substrates and Templates
143(26)
Michael Slomski
Lianghong Liu
John F. Muth
Tania Paskova
6 III-Nitride Metalorganic Vapor-Phase Epitaxy
169(74)
Daniel D. Koleske
7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications
243(42)
Shizhao Fan
Songrui Zhao
Faqrul A. Chowdhury
Renjie Wang
Zetian Mi
8 Advanced Optoelectronic Device Processing
285(20)
Fengyi Jiang
SECTION III Power Electronics
9 Principles and Properties of Nitride-Based Electronic Devices
305(24)
An-Jye Tzou
Chun-Hsun Lee
Shin-Yi Ho
Hao-Chung (Henry) Kuo
Jian-Jang Huang
10 Power Conversion and the Role of GaN
329(18)
Srabanti Chowdhury
11 Recent Progress in GaN-on-Si HEMT
347(20)
Kevin J. Chen
Shu Yang
12 Reliability in III-Nitride Devices
367(66)
Davide Bisi
Isabella Rossetto
Matteo Meneghini
Gaudenzio Meneghesso
Enrico Zanoni
SECTION IV Light Emitters
13 Internal Quantum Efficiency for III-Nitride-Based Blue Light-Emitting Diodes
433(30)
Zi-Hui Zhang
Yonghui Zhang
Hilmi Volkan Demir
Xiao Wei Sun
14 White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends
463(26)
Bingfeng Fan
Yi Zhuo
Gang Wang
15 Current Status and Trends for Green Light-Emitting Diodes
489(22)
Junxi Wang
Zhe Liu
Ning Zhang
16 Ultraviolet Light-Emitting Diodes: Challenges and Countermeasures
511(16)
Jun Hyuk Park
Jong Won Lee
Dong Yeong Kim
Jong Kyu Kim
17 InGaN/GaN Quantum Dot Visible Lasers
527(30)
Thomas Frost
Guan-Lin Su
John Dallesasse
Pallab Bhattacharya
18 GaN-Based Surface-Emitting Lasers
557(40)
Kuo-Bin Hong
Shen-Che Huang
Yu-Hsun Chou
Tien-Chang Lu
SECTION V Emerging Applications
19 III--V Nitride-Based Photodetection
597(18)
Chien-Chung Lin
Lung-Hsing Hsu
Yu-Ling Tsai
Hao-Chung (Henry) Kuo
Wei-Chih Lai
Jinn-Kong Sheu
20 Intersubband Optoelectronics Using III-Nitride Semiconductors
615(30)
Caroline B. Lim
Akhil Ajay
Jonas Lahnemann
David A. Browne
Eva Monroy
21 Lighting Communications
645(16)
Yu-Chieh Chi
Dan-Hua Hsieh
Hao-Chung (Henry) Kuo
Sujie Nakamura
Steve Denbaars
Gong-Ru Lin
22 III-Nitride Semiconductor Single Photon Sources
661(10)
Pei-Cheng Ku
Chu-Hsiang Teng
Hui Deng
Index 671
Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA).

Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Masters level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institution of Engineering and Technology (IET), and the Institute of Electrical and Electronics Engineers (IEEE).