This book highlights the importance of measurement of band gap in HD optoelectronic materials under intense electric field in nano-devices and strong external light waves. The importance of electron statistics (ES) is already well known since the inception of solid-state physics, and this monograph solely deals with the ES in heavily doped (HD) nanostructures by applying Heisenbergs Uncertainty Principle directly, without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, Lead Germanium Telluride, Zinc and Cadmium Diphosphides and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field, and light waves on the ES in HD semiconductors and super-lattices are discussed. The content of this book finds twenty-seven different applications in the arena of nano-science and nanotechnology. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph.D. aspirants and researchers in the fields of condensed matter physics, materials science, solid-state sciences, nano-science and technology, and allied fields in addition to the graduate courses in semiconductor nanostructures.
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1. Introduction.-
2. The HUP and the ES in HD Kane Type III-V and Opto-Electronic Materials Under Intense Electric Field.-
3. The HUP and the ES in Quantum Wells (QWs) of HD Non-Parabolic Materials.-
4. The HUP and the ES in Nano Wires of HD Non-Parabolic Materials.-
5. The HUP and the ES in Quantum Dots (QDs) of HD Non-Parabolic Materials.-
6. The HUP and the ES in doping super lattices of HD Non-Parabolic Semiconductors.-
7. The HUP and the ES in Accumulation Layers of Non-Parabolic Semiconductors.-
8. The HUP and the ES in Heavily Doped (HD) Non-Parabolic Semiconductors under Magnetic quantization.
Prof. Dr. Engg. Kamakhya Prasad Ghatak of IEM, Kolkata obtained his PhD Degree from the Institute of Radio Physics and Electronics of the Calcutta University in 1988 on the basis of 27 research papers in reputed SCI Journals which is still a record of the said Institute. He is the first Doctor of Engineering Degree awardee of Jadavpur University in 1991(h-index-35, i-10 index- 181& T.C.-5746, the author of 370 SCOPUS publications, 17 books on Nano Technology) and as per World Ranking of top 2% Scientists as prepared by Stanford University, USA, in 2020, he stays within top 1% in the field of Applied Physics. From the position of Assistant Professor in Calcutta University in 1983 up to Senior Professor in the Institute of Engineering and Management, Kolkata in 2015 he was at the top of the merit lists in all the cases. His score in Vidwan portal unit of Government of India is 8.7 out of 10, the highest score among the private Engineering Universities and Institutions of West Bengal. He has produced more than 50 PhD students and the list includes Director, Vice Chancellor, Professors and CEOs of different Private organization.
Dr. Madhuchhanda Mitra received her Ph.D. from the University of Calcutta, India. She is a recipient of Griffith Memorial Award of the University of Calcutta. Her present research interests are nano-science and technology, identification of different biomarkers and biomedical signal processing which includes feature extraction, compression, encryption and classification of electrocardiography (ECG) and photoplethysmography (PPG) signals. At present, she is a professor in the Department of Applied Physics, University of Calcutta, India, where she has been actively engaged in both teaching and research in Instrumentation.
Dr. Arindam Biswas received his M.Tech. in Radio Physics and Electronics from the University of Calcutta, India, in 2010, and Ph.D. from NIT Durgapur, in 2013. He was a postdoctoral researcher at Pusan National University, South Korea, under the prestigious BK21PLUS Fellowship. He was a visiting professor at Research Institute of Electronics, Shizuoka University, Japan. Currently, Dr. Biswas is working as an assistant professor in the School of Mines and Metallurgy, Kazi Nazrul University, Asansol, West Bengal, India. His research interests are in the area of carrier transport in low-dimensional systems and electronic devices, nonlinear optical communications, and THz semiconductor sources.
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