This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components.
This book presents a broad review of SiO2 materials, including a brief historical note of Moores law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.
The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling.
This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
1. Moores Law: In 21st Century
2. SiO2 Based MOS Devices: Leakage and
Limitations
3. High- Dielectric Materials: Structural Properties and
Selection
4. Selection of High- Dielectric Materials
5. Tunneling Current
Density and Tunnel Resistivity: Application to High- Material HfO2
6.
Analysis of Interface Charge Density: Application to High- Material Tantalum
Pentoxide
7. High- Material Processing in CMOS VLSI Technology
8. Tunnel
FET: Working, Structure, and Modeling
9. Heusler Compound: A Novel Material
for Optoelectronic, Thermoelectric, and Spintronic Applications
Niladri Pratap Maity, PhD, is an Associate Professor in the Department of Electronics and Communication Engineering at Mizoram University, India. He is the author of more than 110 journal articles and conference papers and the recipient of several best/excellent paper awards. He was a Visiting Scientist at the Department of Science and Technology, Government of India. His research interests include VLSI design, MOS device modeling, and MEMS.
Reshmi Maity, PhD, is an Assistant Professor in the Department of Electronics and Communication Engineering, Mizoram University, Aizawl, India. Prior to that, she was an Assistant Professor at the JIS College of Engineering (West Bengal University of Technology) at Kolkata, India. She is the author of more than 80 refereed publications. Her research interests include VLSI design, nanoelectronics, and MEMS.
Srimanta Baishya, PhD, is a Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar, India. Before that, he was an Assistant Professor in the Department of Electronics and Telecommunication Engineering of the same college. His research interests cover semiconductor devices and circuits, MOS transistor modeling, and MEMSbased energy harvesting. He has published over 60 papers in peer-reviewed journals.
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