Acronyms and Abbreviations |
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Preface |
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xi | |
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1 | (14) |
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1 | (4) |
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Detector Figures of Merit |
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5 | (3) |
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5 | (1) |
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6 | (1) |
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6 | (2) |
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Detectivity Requirements for Thermal Imagers |
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8 | (2) |
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10 | (5) |
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12 | (1) |
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12 | (1) |
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12 | (1) |
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13 | (1) |
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13 | (2) |
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Fundamental Performance Limitations of Infrared Photodetectors |
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15 | (18) |
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Infrared Photon Detector Classifications |
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15 | (1) |
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16 | (5) |
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18 | (1) |
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Noise due to optical signal |
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18 | (1) |
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Noise due to background radiation |
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18 | (2) |
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Internal radiative generation |
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20 | (1) |
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Thermal generation and recombination noise |
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21 | (1) |
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Optimum Thickness of a Detector |
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21 | (2) |
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Detector Material Figure of Merit |
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23 | (1) |
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Reducing Device Volume to Enhance Performance |
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24 | (9) |
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24 | (1) |
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Increasing the apparent ``optical'' area of a detector compared to its physical area |
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25 | (4) |
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29 | (4) |
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Materials Used for Intrinsic Photodetectors |
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33 | (42) |
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Semiconductors for Intrinsic Photodetectors |
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34 | (1) |
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Hg1-xCdx Te Ternary Alloys |
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35 | (12) |
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Band structure and electrical properties |
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35 | (1) |
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35 | (1) |
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36 | (1) |
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37 | (1) |
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38 | (1) |
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38 | (2) |
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40 | (1) |
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Growth of bulk crystals and epilayers |
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40 | (1) |
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41 | (1) |
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42 | (1) |
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43 | (4) |
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Hg-based Alternatives to HgCdTe |
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47 | (5) |
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48 | (1) |
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49 | (3) |
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InAs/Ga1-xInxSb Type II Superlattices |
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52 | (3) |
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55 | (4) |
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55 | (2) |
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57 | (1) |
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58 | (1) |
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58 | (1) |
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59 | (16) |
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60 | (2) |
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Deposition of polycrystaline PbS and PbSe films |
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62 | (1) |
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63 | (12) |
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75 | (24) |
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75 | (5) |
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Thermal Generation-Recombination Processes |
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80 | (5) |
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81 | (1) |
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Internal radiative processes |
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82 | (1) |
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83 | (2) |
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Auger-Dominated Performance |
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85 | (6) |
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85 | (2) |
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87 | (4) |
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Modeling of High-Temperature Photodetectors |
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91 | (8) |
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94 | (5) |
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Hg1-xCdxTe Photoconductors |
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99 | (30) |
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Simplified Model of Equilibrium Mode Photoconductors |
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99 | (7) |
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High-frequency operation of photoconductors |
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102 | (1) |
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10.6-μm Hg1-xCdxTe photoconductor operating at 200-300 K |
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103 | (3) |
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106 | (3) |
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Practical Photoconductors |
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109 | (10) |
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Technology of Hg1-xCdxTe photoconductors |
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109 | (2) |
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Practical excluded photoconductors |
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111 | (1) |
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Optically immersed photoconductors |
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112 | (2) |
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114 | (1) |
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115 | (1) |
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Near room temperature devices |
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115 | (2) |
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117 | (1) |
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118 | (1) |
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119 | (10) |
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123 | (6) |
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129 | (50) |
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Theoretical Design of Hg1-xCdxTe Photodiodes |
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129 | (19) |
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Photocurrent and dark current of photodiodes |
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129 | (1) |
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Structures of Hg1-xCdxTe photodiodes |
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130 | (7) |
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Current-voltage characteristics of photodiodes |
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137 | (8) |
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Quantum efficiency issues of high-temperature photodiodes |
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145 | (2) |
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Frequency response of Hg1-xCdxTe photodiodes |
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147 | (1) |
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Technology of Hg1-xCdxTe Photodiodes |
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148 | (5) |
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Basic configurations of photodiodes |
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148 | (2) |
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150 | (1) |
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150 | (1) |
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150 | (1) |
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151 | (1) |
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151 | (1) |
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151 | (1) |
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152 | (1) |
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152 | (1) |
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153 | (1) |
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153 | (26) |
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153 | (1) |
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153 | (5) |
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158 | (4) |
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Practical stacked multiple-cell devices |
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162 | (1) |
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Auger-suppressed photodiodes |
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163 | (6) |
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169 | (10) |
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Photoelectromagnetic, Magnetoconcentration, and Dember IR Detectors |
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179 | (18) |
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179 | (8) |
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179 | (1) |
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Transport equations in a magnetic field |
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180 | (1) |
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181 | (4) |
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Practical HgCdTe PEM detectors |
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185 | (1) |
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185 | (1) |
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186 | (1) |
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Magnetoconcentration Detectors |
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187 | (3) |
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190 | (7) |
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194 | (3) |
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197 | (14) |
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PbS and PbSe Photoconductors |
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198 | (6) |
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198 | (2) |
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200 | (4) |
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Lead Salt Photovoltaic Detectors |
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204 | (7) |
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208 | (3) |
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Alternative Uncooled Long-Wavelength IR Photodetectors |
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211 | (22) |
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HgZnTe and HgMnTe Detectors |
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211 | (3) |
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214 | (6) |
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InAs/Ga1-xInxSb Type-II Superlattice Detectors |
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220 | (2) |
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222 | (11) |
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228 | (5) |
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233 | (4) |
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Summary of Progress to Date |
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233 | (1) |
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Directions for Future Development |
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233 | (4) |
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235 | (2) |
Index |
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237 | |