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Integrated Circuit Defect-Sensitivity: Theory and Computational Models Softcover reprint of the original 1st ed. 1993 [Mīkstie vāki]

  • Formāts: Paperback / softback, 167 pages, height x width: 235x155 mm, weight: 308 g, 48 Illustrations, black and white; XXIV, 167 p. 48 illus., 1 Paperback / softback
  • Sērija : The Springer International Series in Engineering and Computer Science 208
  • Izdošanas datums: 23-Feb-2014
  • Izdevniecība: Springer-Verlag New York Inc.
  • ISBN-10: 1461363837
  • ISBN-13: 9781461363835
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  • Mīkstie vāki
  • Cena: 91,53 €*
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  • Formāts: Paperback / softback, 167 pages, height x width: 235x155 mm, weight: 308 g, 48 Illustrations, black and white; XXIV, 167 p. 48 illus., 1 Paperback / softback
  • Sērija : The Springer International Series in Engineering and Computer Science 208
  • Izdošanas datums: 23-Feb-2014
  • Izdevniecība: Springer-Verlag New York Inc.
  • ISBN-10: 1461363837
  • ISBN-13: 9781461363835
Citas grāmatas par šo tēmu:
The history of this book begins way back in 1982. At that time a research proposal was filed with the Dutch Foundation for Fundamental Research on Matter concerning research to model defects in the layer structure of integrated circuits. It was projected that the results may be useful for yield estimates, fault statistics and for the design of fault tolerant structures. The reviewers were not in favor of this proposal and it disappeared in the drawers. Shortly afterwards some microelectronics industries realized that their survival may depend on a better integration between technology-and design-laboratories. For years the "silicon foundry" concept had suggested a fairly rigorous separation between the two areas. The expectation was that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC's). Those fabrication plants would be concentrated with only a few market leaders.

Papildus informācija

Springer Book Archives
1 Introduction.- 1.1 Approaches to Yield Modeling.- 2 Defect Semantics
and Yield Modeling.- 2.1 Microelectronics Technology.- 2.2 Modeling of
Process Induced Defects and Faults.- 2.3 Statistical Characterization of Spot
Defects.- 2.4 Brief Overview of Historical Yield Models.- 3 Computational
Models for Defect-Sensitivity.- 3.1 Taxonomy of DefectSensitivity Models.-
3.2 Theoretical Foundation of Critical Areas.- 3.3 Susceptible Sites.- 3.4
Critical Regions and Critical Areas.- 3.5 Geometrical Proof of the
Construction of Critical Regions..- 4 Single Defect Multiple Layer (SDML)
Model.- 4.1 Critical Regions for Protrusion Defects.- 4.2 Critical Regions
for Isolated Spot Defects.- 4.3 Critical Regions for Intrusion Defects.- 4.4
A CAD System for SDML Critical Areas.- 4.5 A Spot-Defect Language.- 4.6
Layout Partitioning.- 4.7 Extraction of MultiLayer Susceptible Sites.- 4.8
Defect Mechanisms.- 4.9 Intrusion Defects.- 4.10 IsolatedSpot Defects.- 4.11
Protrusion Defects.- 4.12 Construction of MultiLayer Critical Regions.- 4.13
Computation of MultiLayer Critical Areas.- 4.14 Notes on Implementation.-
4.15 Examples.- 5 Fault Analysis and Multiple Layer Critical Areas.- 5.1
Failure Analysis and Yield Projection of 6TRAM Cells.- 5.2 Fault Weighting.-
5.3 Analysis and Weighting of Defect Induced Faults.- 6 Single Defect Single
Layer (SDSL) Model.- 6.1 Theory of Critical Regions for SDSL Models.- 6.2
SingleLayer Susceptible Sites.- 6.3 Critical Regions for Bridges.- 6.4
Critical Regions for Cuts.- 6.5 Computation of Critical Areas for SDSL
Models.- 6.6 Extraction of SDSL Susceptible Sites.- 6.7 Computation of SDS
Critical Areas.- 6.8 Complexity Analysis.- 6.9 Examples.- 7 IC Yield
Prediction and Single Layer Critical Areas.- 7.1 Sensitivity Analysis.-7.9
Yield Analysis.- 8 Single vs. Multiple Layer Critical Areas.- 8.1 Uncovered
Situations of the SDSL Model.- 8.2 Case Study.- 8.2.1 Comparative Results.-
8.3 Summary and Discussion.- References.- Appendix 1 Sources of Defect
Mechanism.- Appendix 2 End Effects of Critical Regions.- Appendix 3 NMOS
Technology File.