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Ion Beam Analysis of Surfaces & Interfaces of Condensed Matter Systems [Hardback]

  • Formāts: Hardback, 445 pages, height x width: 180x260 mm, weight: 1114 g, Illustrations
  • Izdošanas datums: 01-Nov-2002
  • Izdevniecība: Nova Science Publishers Inc
  • ISBN-10: 1590335384
  • ISBN-13: 9781590335383
Citas grāmatas par šo tēmu:
  • Hardback
  • Cena: 153,54 €
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  • Formāts: Hardback, 445 pages, height x width: 180x260 mm, weight: 1114 g, Illustrations
  • Izdošanas datums: 01-Nov-2002
  • Izdevniecība: Nova Science Publishers Inc
  • ISBN-10: 1590335384
  • ISBN-13: 9781590335383
Citas grāmatas par šo tēmu:
Mostly physicists, but also mathematicians and chemists from countries around the world report on recent trends and findings in the technique. Among the innovations they discuss are the secondary ion mass spectrometry based on highly charged ions, the analysis of liquid surfaces, and the analysis of surface-alloys that are only one atomic layer thick. Among the 11 topics are also Rutherford backscattering spectrometry, the channeling analysis of self-assembled structures, light emission from sputtered particles, and bombardment-induced topography on semiconductor surfaces. Annotation (c) Book News, Inc., Portland, OR (booknews.com)
Preface vii
Application of Low Energy Ion Scattering to Alloy Surfaces and Surface Alloys 1(16)
D. J. O'Connor
"Direct Recoil and Ion Scattering Spectrometries as Probes of Liquid Surfaces." 17(42)
Michael Tassotto and Philip R. Watson
New Trends in Rutherford Backscattering Spectrometry 59(44)
Emile J. Knystautas
RBS and Channeling Analysis of Self-Assembled Structures 103(34)
B.N. Dev
ERDA: A Tool for Surface and Near-Surface Studies 137(56)
Devesh Kumar Avasthi and Walter Assmann
Light Emission from Sputtered Particles 193(24)
Chin Shuang Lee
Dynamic Secondary Ion Mass Spectrometry for Compositional Analysis of Interfaces 217(50)
Purushottam Chakraborty
Surface Analysis with Slow, Highly Charged Ions like Au69+: TOF-SIMS and the Probing of Nano-Environments 267(44)
Thomas Schenkel
Application of Low Energy Ions to Modify Multilayer Systems for Improved X-ray Reflectivity 311(46)
J. Verhoeven
Bombardment-Induced Topography on Semiconductor Surfaces 357(44)
Johan B. Malherbe
High Energy Ion Implantation in GaAs: Optical, Electrical and X-ray Investigations 401(38)
Y.P. Ali, A.R. Damle, Geeta P. Nair, A.M. Narsale, K.S. Chandrasekaran and B.M. Arora
Index 439