Preface |
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xv | |
Acknowledgments |
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xvii | |
List of symbols and abbreviations |
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xix | |
About the authors |
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xxiii | |
Section A Foundations |
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1 | (140) |
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3 | (48) |
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Intended Learning Outcomes |
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4 | (1) |
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1.1 Introduction to Microwave Circuit Design |
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4 | (8) |
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1.1.1 What Are Microwaves? |
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4 | (2) |
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1.1.2 The Importance of Microwave Electronics |
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6 | (1) |
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1.1.3 Electromagnetism Basics |
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7 | (5) |
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1.2 Properties of Materials at Microwave Frequencies |
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12 | (8) |
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13 | (2) |
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15 | (1) |
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1.2.3 Permittivity and Permeability |
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16 | (2) |
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1.2.4 Losses in Dielectric and Magnetic Materials at Microwave Frequencies |
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18 | (2) |
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1.3 Behavior of Real Components at Microwave Frequencies |
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20 | (8) |
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20 | (1) |
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21 | (2) |
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23 | (2) |
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25 | (2) |
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1.3.5 Surface Mount Devices |
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27 | (1) |
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1.4 The Importance of Impedance Matching |
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28 | (3) |
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1.4.1 Maximum Power Transfer |
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28 | (3) |
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1.5 Common Microwave Metrics |
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31 | (3) |
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33 | (1) |
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34 | (12) |
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34 | (6) |
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1.6.2 Loaded Q and External Q |
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40 | (1) |
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1.6.3 Q of a One-Port Resonator |
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41 | (5) |
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46 | (1) |
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47 | (1) |
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48 | (3) |
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Chapter 2 Transmission Line Theory |
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51 | (38) |
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Intended Learning Outcomes |
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51 | (1) |
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52 | (2) |
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2.2 Propagation and Reflection on a Transmission Line |
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54 | (9) |
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2.3 Sinusoidal Steady-State Conditions: Standing Waves |
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63 | (5) |
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2.4 Primary Line Constants |
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68 | (4) |
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2.4.1 The Lossless Transmission Line |
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71 | (1) |
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2.5 Derivation of the Characteristic Impedance |
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72 | (2) |
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2.6 Transmission Lines With Arbitrary Terminations |
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74 | (7) |
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2.6.1 Input Impedance at an Arbitrary Point on a Terminated Line |
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76 | (2) |
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2.6.2 Special Cases: Short-Circuit Line |
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78 | (2) |
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2.6.3 Special Cases: Open-Circuit Line |
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80 | (1) |
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2.6.4 Special Cases: Matched Line |
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81 | (1) |
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2.7 The Effect of Line Losses |
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81 | (2) |
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2.7.1 Characteristic Impedance of Lossy Lines |
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81 | (1) |
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82 | (1) |
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83 | (2) |
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85 | (1) |
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86 | (1) |
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87 | (2) |
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Chapter 3 Practical Transmission Lines |
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89 | (32) |
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Intended Learning Outcomes |
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89 | (1) |
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90 | (1) |
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90 | (5) |
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95 | (3) |
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98 | (1) |
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99 | (6) |
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3.6 Microstrip Discontinuities |
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105 | (7) |
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3.6.1 Edge Effects in Microstrip |
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105 | (1) |
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3.6.2 Microstrip Gaps and DC Blocks |
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106 | (2) |
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3.6.3 Microstrip Bends and Curves |
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108 | (2) |
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3.6.4 Microstrip Step Width Change |
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110 | (2) |
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112 | (2) |
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114 | (2) |
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116 | (1) |
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117 | (4) |
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Chapter 4 The Smith Chart |
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121 | (20) |
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Intended Learning Outcomes |
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121 | (1) |
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4.1 Introduction to the Smith Chart |
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122 | (1) |
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4.2 Smith Chart Derivation |
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122 | (9) |
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4.2.1 Derivation of Constant Resistance Circles |
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124 | (2) |
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4.2.2 Derivation of Constant Reactance Circles |
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126 | (1) |
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4.2.3 Building the Complete Smith Chart |
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127 | (4) |
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4.3 Using the Smith Chart |
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131 | (4) |
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4.3.1 Conversion Between Immittance and Reflection Coefficient |
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131 | (2) |
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4.3.2 Impedance at Any Point on a Transmission Line |
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133 | (1) |
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4.3.3 Constant Q Contours on the Smith Chart |
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134 | (1) |
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135 | (2) |
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4.4.1 Combined Impedance-Admittance Smith Chart |
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135 | (2) |
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4.4.2 Compressed Smith Chart |
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137 | (1) |
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137 | (1) |
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138 | (2) |
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140 | (1) |
Section B Microwave Circuit Analysis |
|
141 | (212) |
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Chapter 5 Immittance Parameters |
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143 | (24) |
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Intended Learning Outcomes |
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143 | (1) |
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144 | (8) |
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5.1.1 The Admittance or Y-Parameters |
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145 | (1) |
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5.1.2 The Impedance or Z-Parameters |
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146 | (3) |
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5.1.3 The Hybrid or h-Parameters |
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149 | (1) |
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5.1.4 The Chain or ABCD-Parameters |
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150 | (2) |
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5.2 Conversion Between Immittance Parameters |
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152 | (1) |
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5.3 Input and Output Impedance of a Two-Port in Terms of Immittance Parameters |
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153 | (2) |
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5.4 Classification of Immittance Matrices |
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155 | (4) |
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5.4.1 Activity and Passivity |
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155 | (3) |
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158 | (1) |
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5.4.3 Reciprocity and Symmetry |
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158 | (1) |
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5.5 Immittance Parameter Representation of Active Devices |
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159 | (2) |
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5.5.1 Two-Port Representation of Transistors |
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159 | (2) |
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5.6 Immittance Parameter Analysis of Two-Ports With Feedback |
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161 | (3) |
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5.6.1 The Benefits of Feedback |
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161 | (1) |
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161 | (1) |
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161 | (1) |
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162 | (2) |
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164 | (1) |
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164 | (2) |
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166 | (1) |
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167 | (38) |
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Intended Learning Outcomes |
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168 | (1) |
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168 | (6) |
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6.1.1 Limitations of the Immittance Parameter Approach |
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169 | (1) |
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6.1.2 Definition of the Scattering Parameters |
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170 | (4) |
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6.2 Input and Output Impedance of a Two-Port in Terms of S-Parameters |
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174 | (1) |
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6.3 Classification of S-Matrices |
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175 | (5) |
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6.3.1 Lossless and Reciprocal Networks |
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175 | (1) |
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6.3.2 Activity and Passivity |
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176 | (4) |
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180 | (1) |
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180 | (7) |
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6.4.1 Decomposition of Signal Flow Graphs |
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181 | (6) |
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6.5 Scattering Transfer Parameters |
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187 | (3) |
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6.6 Relationship Between S-Parameters and Immittance Parameters |
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|
190 | (1) |
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6.7 Measurement of S-Parameters |
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191 | (10) |
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6.7.1 The Network Analyzer |
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193 | (2) |
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6.7.2 VNA Measurement Procedure |
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195 | (1) |
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6.7.3 Network Analyzer Error Correction |
|
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195 | (1) |
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6.7.4 One-Port Error Model (The "Three-Term" Model) |
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196 | (3) |
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6.7.5 Two-Port Error Model (The "12-Term" Model) |
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199 | (2) |
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201 | (1) |
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202 | (2) |
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204 | (1) |
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Chapter 7 Gain and Stability of Active Networks |
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205 | (40) |
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Intended Learning Outcomes |
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205 | (1) |
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206 | (1) |
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7.2 Power Gain in Terms of Immittance Parameters |
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206 | (9) |
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7.2.1 Voltage Gain of an Active Two-Port |
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206 | (1) |
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7.2.2 Power Gain of an Active Two-Port |
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207 | (8) |
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7.3 Stability in Terms of Immittance Parameters |
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215 | (2) |
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7.4 Stability in Terms of S-Parameters |
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217 | (12) |
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217 | (1) |
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217 | (7) |
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7.4.3 Stability Criteria in Terms of S-Parameters |
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224 | (5) |
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7.5 Power Gain in Terms of S-Parameters |
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229 | (12) |
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7.5.1 Maximum Available Gain and Conjugate Terminations |
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235 | (3) |
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7.5.2 Constant Power Gain Circles |
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238 | (3) |
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241 | (1) |
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242 | (1) |
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243 | (2) |
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Chapter 8 Three-Port Analysis Techniques |
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|
245 | (40) |
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Intended Learning Outcomes |
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245 | (1) |
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246 | (1) |
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8.2 Three-Port Immittance Parameters |
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247 | (2) |
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8.3 Three-Port S-Parameters |
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249 | (10) |
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8.3.1 Derivation of Three-Port S-Parameters |
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|
250 | (7) |
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8.3.2 Calculation of Reduced Two-Port S-Parameters |
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|
257 | (2) |
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8.4 Configuration Conversion |
|
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259 | (2) |
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8.4.1 Common Base/Gate Configuration |
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260 | (1) |
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8.4.2 Common Collector/Drain Configuration |
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260 | (1) |
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261 | (10) |
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261 | (5) |
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8.5.2 Classification of Feedback Mappings |
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266 | (5) |
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8.6 Application of Three-Port Design Techniques |
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271 | (7) |
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8.6.1 Generating Negative Resistance in Transistors |
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271 | (4) |
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8.6.2 The Active Isolator |
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275 | (3) |
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8.7 Reverse Feedback Mappings |
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278 | (3) |
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281 | (1) |
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281 | (1) |
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282 | (3) |
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Chapter 9 Lumped Element Matching Networks |
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285 | (26) |
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Intended Learning Outcomes |
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285 | (1) |
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286 | (1) |
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9.1.1 The Need for Impedance Matching |
|
|
286 | (1) |
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9.2 L-Section Matching Networks |
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287 | (13) |
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9.2.1 L-Section Matching of a Resistive Source to a Resistive Load |
|
|
287 | (4) |
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9.2.2 Generalized Analytical Design of Type 1 L-Section |
|
|
291 | (1) |
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9.2.3 Generalized Analytical Design of Type 2 L-Section |
|
|
292 | (1) |
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9.2.4 L-Section Design Using the Smith Chart |
|
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293 | (4) |
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9.2.5 Forbidden Regions on the Smith Chart |
|
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297 | (1) |
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9.2.6 Four-Step Design Procedure for Generalized L-Sections |
|
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298 | (2) |
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9.3 Three Element Matching Networks |
|
|
300 | (9) |
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9.3.1 The π-Section Matching Network |
|
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301 | (4) |
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9.3.2 The T-Section Matching Network |
|
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305 | (2) |
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9.3.3 π to T Transformation |
|
|
307 | (2) |
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9.4 Bandwidth of Lumped Element Matching Networks |
|
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309 | (1) |
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309 | (1) |
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310 | (1) |
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310 | (1) |
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Chapter 10 Distributed Element Matching Networks |
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311 | (42) |
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Intended Learning Outcomes |
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311 | (1) |
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312 | (1) |
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10.2 Impedance Transformation With Line Sections |
|
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312 | (2) |
|
10.3 Single Stub Matching |
|
|
314 | (10) |
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10.3.1 Single Stub Matching: Analytical Approach |
|
|
316 | (3) |
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10.3.2 Single Stub Matching: Graphical Approach |
|
|
319 | (5) |
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10.4 Double Stub Matching |
|
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324 | (16) |
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10.4.1 Double Stub Matching: Analytical Approach |
|
|
326 | (3) |
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10.4.2 Double Stub Matching: Graphical Approach |
|
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329 | (3) |
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10.4.3 Forbidden Regions for Double Stub Matching |
|
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332 | (8) |
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10.5 Triple Stub Matching |
|
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340 | (1) |
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10.6 Quarter-Wave Transformer Matching |
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340 | (4) |
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10.7 Bandwidth of Distributed Element Matching Networks |
|
|
344 | (5) |
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10.7.1 Bandwidth of Stub Matching Networks |
|
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344 | (3) |
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10.7.2 Bandwidth of Quarter-Wave Transformers |
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347 | (2) |
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349 | (1) |
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350 | (1) |
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351 | (1) |
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|
352 | (1) |
Section C Microwave Circuit Design |
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353 | (264) |
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Chapter 11 Microwave Semiconductor Materials and Diodes |
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355 | (40) |
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Intended Learning Outcomes |
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355 | (1) |
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356 | (1) |
|
11.2 Choice of Microwave Semiconductor Materials |
|
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357 | (6) |
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11.3 Microwave Semiconductor Fabrication Technology |
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363 | (3) |
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363 | (2) |
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11.3.2 Molecular Beam Epitaxy |
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365 | (1) |
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366 | |
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170 | (201) |
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371 | (4) |
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375 | (5) |
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380 | (3) |
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383 | (5) |
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11.9.1 Gunn Diode Oscillators |
|
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385 | (3) |
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11.10 The IMPATT Diode Family |
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388 | (1) |
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|
389 | |
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190 | (205) |
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Chapter 12 Microwave Transistors and MMICs |
|
|
395 | (44) |
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Intended Learning Outcomes |
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|
396 | (1) |
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396 | (1) |
|
12.2 Microwave Bipolar Junction Transistors |
|
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397 | (10) |
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|
397 | (1) |
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12.2.2 The BIT Equivalent Circuit |
|
|
398 | (6) |
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12.2.3 h-Parameters of the BJT Hybrid-ir Equivalent Circuit |
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|
404 | (3) |
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12.3 Heterojunction Bipolar Transistor |
|
|
407 | (1) |
|
12.4 Microwave Field-Effect Transistors |
|
|
408 | (2) |
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12.4.1 The Metal Semiconductor FET |
|
|
408 | (1) |
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12.4.2 MESFET Construction |
|
|
408 | (1) |
|
12.4.3 High Electron Mobility Transistors Construction |
|
|
409 | (1) |
|
12.5 MESFET and HEMT Equivalent Circuit |
|
|
410 | (5) |
|
12.5.1 MESFET Equivalent Circuit Parameter Extraction |
|
|
414 | (1) |
|
12.6 Monolithic Microwave Integrated Circuits |
|
|
415 | (1) |
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|
416 | (2) |
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12.8 MMIC Circuit Elements |
|
|
418 | (11) |
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|
418 | (1) |
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|
419 | (1) |
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420 | (2) |
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422 | (2) |
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|
424 | (3) |
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12.8.6 MMIC Transmission Lines |
|
|
427 | (1) |
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12.8.7 Via Holes, Bond Pads, and Other Structures |
|
|
428 | (1) |
|
12.9 MMIC Application Example |
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|
429 | (3) |
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|
432 | (1) |
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|
432 | (7) |
|
Chapter 13 Microwave Amplifier Design |
|
|
439 | (36) |
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Intended Learning Outcomes |
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|
439 | (1) |
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|
440 | (1) |
|
13.2 Single-Stage Amplifier Design |
|
|
440 | (9) |
|
13.2.1 The Unilateral Approximation |
|
|
445 | (1) |
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|
445 | (2) |
|
13.2.3 Circles of Constant Unilateral Gain |
|
|
447 | (1) |
|
13.2.4 Error Involved in the Unilateral Approximation |
|
|
448 | (1) |
|
13.3 Single-Stage Feedback Amplifier Design |
|
|
449 | (3) |
|
13.4 Multistage Amplifiers |
|
|
452 | (8) |
|
13.4.1 Fundamental Limits on the Bandwidth of Interstage Matching Networks |
|
|
456 | (4) |
|
13.5 Broadband Amplifiers |
|
|
460 | (10) |
|
13.5.1 Lossy Matched Amplifiers |
|
|
461 | (1) |
|
13.5.2 Broadband Feedback Amplifiers |
|
|
462 | (2) |
|
13.5.3 Distributed Amplifiers |
|
|
464 | (6) |
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|
470 | (1) |
|
|
471 | (4) |
|
Chapter 14 Low-Noise Amplifier Design |
|
|
475 | (44) |
|
Intended Learning Outcomes |
|
|
475 | (1) |
|
|
476 | (1) |
|
14.2 Types of Electrical Noise |
|
|
477 | (4) |
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|
477 | (2) |
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|
479 | (1) |
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|
480 | (1) |
|
14.3 Noise Factor, Noise Figure, and Noise Temperature |
|
|
481 | (2) |
|
14.4 Representation of Noise in Active Two-Port Networks |
|
|
483 | (6) |
|
14.5 Single-Stage Low-Noise Amplifier Design |
|
|
489 | (11) |
|
14.5.1 Circles of Constant Noise Figure |
|
|
489 | (10) |
|
14.5.2 Noise Factor of Passive Two-Ports |
|
|
499 | (1) |
|
14.6 Multistage Low-Noise Amplifier Design |
|
|
500 | (7) |
|
14.6.1 Circles of Constant Noise Measure |
|
|
503 | (4) |
|
|
507 | (7) |
|
14.7.1 Noise Figure Measurement |
|
|
507 | (5) |
|
14.7.2 Noise Characterization of Microwave Transistors |
|
|
512 | (2) |
|
|
514 | (1) |
|
|
515 | (4) |
|
Chapter 15 Microwave Oscillator Design |
|
|
519 | (40) |
|
Intended Learning Outcomes |
|
|
519 | (1) |
|
|
520 | (4) |
|
15.2 RF Feedback Oscillators |
|
|
524 | (7) |
|
15.2.1 The Feedback Oscillator Model |
|
|
524 | (2) |
|
15.2.2 Colpitts Oscillator |
|
|
526 | (2) |
|
15.2.3 Hartley Oscillator |
|
|
528 | (1) |
|
15.2.4 Clapp/Gouriet Oscillator |
|
|
529 | (2) |
|
15.3 Cross-Coupled Oscillators |
|
|
531 | (4) |
|
15.4 Negative Resistance Oscillators |
|
|
535 | (4) |
|
15.5 Frequency Stabilization |
|
|
539 | (11) |
|
15.5.1 Crystal Stabilization |
|
|
540 | (4) |
|
15.5.2 Cavity Stabilization |
|
|
544 | (3) |
|
15.5.3 Dielectric Resonator Stabilization |
|
|
547 | (3) |
|
15.6 Voltage Controlled Oscillators |
|
|
550 | (3) |
|
15.6.1 YIG Tuned Oscillators |
|
|
550 | (1) |
|
15.6.2 Varactor Tuned Oscillators |
|
|
551 | (2) |
|
15.7 Injection Locked and Synchronous Oscillators |
|
|
553 | (3) |
|
|
556 | (1) |
|
|
556 | (3) |
|
Chapter 16 Low-Noise Oscillator Design |
|
|
559 | (30) |
|
Intended Learning Outcomes |
|
|
559 | (1) |
|
|
560 | (1) |
|
16.2 Definition of Phase Noise |
|
|
561 | (3) |
|
16.3 Why Oscillator Phase Noise Is Important |
|
|
564 | (1) |
|
16.4 Root Causes of Phase Noise |
|
|
565 | (2) |
|
16.4.1 The Thermal Noise Component of Phase Noise |
|
|
565 | (1) |
|
16.4.2 Flicker Noise in Oscillators |
|
|
566 | (1) |
|
16.5 Modeling Oscillator Phase Noise |
|
|
567 | (15) |
|
16.5.1 Analytical Phase-Noise Models: Feedback Oscillator |
|
|
571 | (8) |
|
16.5.2 Analytical Phase-Noise Models: Negative Resistance Oscillator |
|
|
579 | (2) |
|
16.5.3 Comparison of Feedback and Negative Resistance Oscillator Phase-Noise Equations |
|
|
581 | (1) |
|
16.6 Low-Noise Oscillator Design |
|
|
582 | (1) |
|
16.6.1 Low-Noise Design: Resonator |
|
|
582 | (1) |
|
16.6.2 Low-Noise Design: Transistor |
|
|
582 | (1) |
|
16.7 Phase-Noise Measurements |
|
|
583 | (3) |
|
|
583 | (1) |
|
16.7.2 The Phase Detector Method |
|
|
584 | (1) |
|
16.7.3 The Delay Line/Frequency Discriminator Method |
|
|
585 | (1) |
|
|
586 | (1) |
|
|
587 | (2) |
|
Chapter 17 Microwave Mixers |
|
|
589 | (28) |
|
Intended Learning Outcomes |
|
|
589 | (1) |
|
|
590 | (1) |
|
17.2 Mixer Characterization |
|
|
591 | (3) |
|
|
592 | (1) |
|
|
592 | (1) |
|
|
592 | (1) |
|
17.2.4 Third-Order Intercept Point: IP3 |
|
|
593 | (1) |
|
|
594 | (1) |
|
17.3 Basic Mixer Operation |
|
|
594 | (5) |
|
17.4 Passive Mixer Circuits |
|
|
599 | (5) |
|
17.4.1 Nonlinear Diode Mixer |
|
|
600 | (1) |
|
17.4.2 Passive Double Balanced Diode Mixer |
|
|
601 | (3) |
|
17.5 Active Mixer Circuits |
|
|
604 | (11) |
|
17.5.1 Active Single Balanced Mixer Using BJT |
|
|
604 | (4) |
|
17.5.2 Active Double Balanced Mixer: The Gilbert Cell |
|
|
608 | (4) |
|
17.5.3 Conversion Gain of the Gilbert Cell |
|
|
612 | (2) |
|
17.5.4 The FET Gilbert Cell |
|
|
614 | (1) |
|
|
615 | (1) |
|
|
615 | (2) |
Appendix A Parameter Conversion Tables |
|
617 | (4) |
|
A.1 Two-Port Immittance Parameter Conversions |
|
|
617 | (1) |
|
A.2 Two-Port S-Parameters to Immittance Parameter Conversions |
|
|
618 | (1) |
|
A.3 Two-Port Immittance Parameter to S-Parameter Conversions |
|
|
618 | (1) |
|
A.4 Two-Port T-Parameter and S-Parameter Conversions |
|
|
619 | (2) |
Appendix B Physical Constants |
|
621 | (2) |
Appendix C Forbidden Regions for L-Sections |
|
623 | (6) |
|
C.1 Forbidden Regions for LC L-Sections |
|
|
623 | (1) |
|
C.2 Forbidden Regions for LL and CC L-Sections |
|
|
623 | (6) |
Index |
|
629 | |