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E-grāmata: Nano Devices and Sensors

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  • Formāts: 228 pages
  • Izdošanas datums: 25-Apr-2016
  • Izdevniecība: De Gruyter
  • Valoda: eng
  • ISBN-13: 9781501501531
  • Formāts - PDF+DRM
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  • Formāts: 228 pages
  • Izdošanas datums: 25-Apr-2016
  • Izdevniecība: De Gruyter
  • Valoda: eng
  • ISBN-13: 9781501501531

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The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics:

A. Green Electronics B. Microelectronic Circuits and Systems C. Integrated Circuits and Packaging Technologies D. Computer and Communication Engineering

E. Electron Devices

F. Optoelectronic and Semiconductor Technologies





The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including:

"The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan.

"Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan.

"The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan.

"Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA.





After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan.

The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.
Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
1(28)
Chunsheng Jiang
Renrong Liang
Jing Wang
Jun Xu
Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation
29(20)
Viktor Sverdlov
Dmitri Osintsev
Siegfried Selberherr
Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory
49(24)
Amit Prakash
Hyunsang Hwang
Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices
73(18)
Yao-Feng Chang
Burt Fowler
Ying-Chen Chen
Fei Zhou
Xiaohan Wu
Yen-Ting Chen
Yanzhen Wang
Fei Xue
Jack C. Lee
A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory
91(22)
Yao-Feng Chang
Burt Fowler
Ying-Chen Chen
Fei Zhou
Chih-Hung Pan
Kuan-Chang Chang
Tsung-Ming Tsai
Ting-Chang Chang
Simon M. Sze
Jack C. Lee
On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System
113(22)
Tzung-Je Lee
Yen-Ting Chen
A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications
135(24)
Tzung-Je Lee
Yen-Ting Chen
A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission
159(18)
Tzung-Je Lee
Yen-Ting Chen
Impacts of ESD Reliability by Different Layout Engineering in the 0.25-um 60-V High-Voltage LDMOS Devices
177(22)
Shen-Li Chen
Chun-Ju Lin
Yu-Ting Huang
Impact-Based Area Allocation for Yield Optimization in Integrated Circuits
199(16)
Billion Abraham
Arif Widodo
Poki Chen
Editors 215(2)
List of authors 217
Juin J. Liou, University of Central Florida, USA; Yung-Hui Chun, Shien-Kuei Liaw, National Taiwan University, Taiwan.