Aggressive scaling of device and interconnect dimensions has resulted in many low dimensional issues in the nanometer regime. This book deals with various new generation interconnect materials and interconnect modeling and highlights the significance of novel nano interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis.
Features:
- Focusses on materials and nanomaterials utilization in next generation interconnects based on Carbon nanotubes (CNT) and Graphene nanoribbons (GNR).
- Helps readers realize interconnects, interconnect models, and crosstalk noise analysis.
- Describes Hybrid CNT and GNR based interconnects.
- Presents the details of power supply voltage drop analysis in CNT and GNR interconnects.
- Overviews pertinent RF performance and stability analysis.
This book is aimed at graduate students and researchers in electrical and materials engineering, nano/microelectronics.
This book deals with various new generation interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis.
1 Nanomaterials for Next-Generation Interconnects
2 Interconnect Modeling Using Graphene Nanoribbon (GNR)
3 Introduction to Nanoscale Interconnect Materials
4 Analysis of Simultaneous Switching Noise and IR Drop
5 Temperature-Dependent RF Performance Analysis of GNR-Based Nano-Interconnect Systems
6 Electro-Thermal Modeling of CNT and GNR Interconnect for Nano-Electronic Circuits
7 Hybrid Cu-Carbon as Interconnect Materials and Their Interconnect Models
8 Hybrid Cu-CNT Composite as Interconnect Materials and Their Equivalent Models
9 Relative Stability Analysis of the GNR and Cu Interconnect
10 Transmission Line-Based Modeling of CNT and GNR Interconnects Using Numerical Methods
Sandip Bhattacharya received his Ph.D. (Eng.) degree from the Indian Institute of Engineering Science and Technology (IIEST), India, in 2017. From October 2017 to December 2020, he worked as a postdoctoral researcher at the HiSIM research center, Hiroshima University, Japan. He is currently working as an Associate Professor and Head of the Department of Electronics and Communication Engineering at SR University, Warangal, Telangana, India. His current research interests are nano device and interconnect modeling.
J. Ajayan received his B.Tech. degree in Electronics and Communication Engineering from Kerala University in 2009, and M.Tech. and Ph.D. degrees in Electronics and Communication Engineering from Karunya University, Coimbatore, India, in 2012 and 2017, respectively. He is an Associate Professor in the Department of Electronics and Communication Engineering at SR University, Telangana, India. He has published more than 100 research articles in various journals and international conferences. He has published two books, more than ten book chapters, and has two patents. He is a reviewer of more than 30 journals for various publishers. He was the Guest Editor for several of the special issues. His areas of interest are microelectronics, semiconductor devices, nanotechnology, RF integrated circuits, and photovoltaics.
Fernando Avila Herrera has worked in the field of academic and semiconductor industry. He has involved with the modeling and characterization of semiconductor devices, especially MOSFETs. Further, he has experience in device reliability modeling, model parameter extraction, Verilog-A, TCAD, and EDA tools. He also has experience in HiSIM family models for parameter extraction and physics modeling and FPGA programming. He has collaborated with different groups for developing compact models.
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