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Nano-Optoelectronics: Concepts, Physics and Devices Softcover reprint of the original 1st ed. 2002 [Mīkstie vāki]

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  • Formāts: Paperback / softback, 442 pages, height x width: 235x155 mm, weight: 706 g, XVI, 442 p., 1 Paperback / softback
  • Sērija : NanoScience and Technology
  • Izdošanas datums: 28-Oct-2012
  • Izdevniecība: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642628079
  • ISBN-13: 9783642628078
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  • Mīkstie vāki
  • Cena: 149,54 €*
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Nano-Optoelectronics: Concepts, Physics and Devices Softcover reprint of the original 1st ed. 2002Palielināt
  • Formāts: Paperback / softback, 442 pages, height x width: 235x155 mm, weight: 706 g, XVI, 442 p., 1 Paperback / softback
  • Sērija : NanoScience and Technology
  • Izdošanas datums: 28-Oct-2012
  • Izdevniecība: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642628079
  • ISBN-13: 9783642628078
Citas grāmatas par šo tēmu:
Permanent link: https://www.kriso.lv/db/9783642628078.html
Keywords:

Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

Recenzijas

From the reviews:









"This is an excellent book covering various aspects of semiconductor quantum dots ranging from theory, growth, structural, electronic and optical properties to devices such as quantum dot lasers, photodetectors and optical amplifiers. will be a valuable resource for researchers and students working in the field." (Chennupati Jagadish, The Physicist, Vol. 40 (1), 2003)

Papildus informācija

Springer Book Archives
I Concepts.- 1 The History of Heterostructure Lasers.- 2
Stress-Engineered Quantum Dots: Natures Way.- II Physics.- 3
Characterization of Structure and Composition of Quantum Dots by Transmission
Electron Microscopy.- 4 Scanning Tunneling Microscopy Characterization of
InAs Nanostructures Formed on GaAs(001).- 5 Cross-sectional Scanning
Tunneling Microscopy at InAs Quantum Dots.- 6 X-ray Characterization of Group
III-Nitrides (Al,In,Ga)N.- 7 Theory of the Electronic and Optical Properties
of InGaAs/GaAs Quantum Dots.- 8 Magneto-Tunneling Spectroscopy of
Self-Assembled InAs Dots.- 9 Modulation Spectroscopy and Surface Photovoltage
Spectroscopy of Semiconductor Quantum Wires and Quantum Dots.- 10 Optical
Properties of Self-Organized Quantum Dots.- 11 High Occupancy Effects and
Condensation Phenomena in Semiconductor Microcavities and Bulk
Semiconductors.- III Devices.- 12 Theory of Quantum Dot Lasers.- 13
Long-Wavelength InGaAs/GaAs Quantum Dot Lasers.- 14 InP/GalnP Quantum Dot
Lasers.- 15 High Power Quantum Dot Lasers.- 16 Inter-Sublevel Transitions in
Quantum Dots and Device Applications.- 17 Progress in Growth and Physics of
Nitride-Based Quantum Dots.- 18 Ultrafast Optical Properties of Quantum Dot
Amplifiers.