Preface |
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xi | |
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1 Nanogap Electrodes and Molecular Electronic Devices |
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1 | (24) |
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1 | (1) |
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1.2 Overview of Molecular Electronics |
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2 | (14) |
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1.2.1 Why Molecular Electronics |
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3 | (1) |
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1.2.1.1 History of Computing |
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3 | (3) |
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6 | (2) |
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1.2.1.3 Molecular Electronics: A Beyond-CMOS Option |
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8 | (2) |
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1.2.2 Molecular Materials for Organic Electronics |
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10 | (1) |
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11 | (1) |
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11 | (1) |
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12 | (1) |
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1.2.3 Molecules for Molecular-Scale Electronics |
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13 | (3) |
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1.3 Introduction to Nanogap Electrodes |
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16 | (3) |
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19 | (6) |
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19 | (6) |
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2 Electron Transport in Single Molecular Devices |
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25 | (32) |
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25 | (1) |
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26 | (1) |
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26 | (5) |
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2.2.2 Nonequilibrium Green's Function Method |
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26 | (3) |
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2.2.3 Master Equation Method |
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29 | (2) |
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2.3 Single Electron Transport Through Single Molecular Junction |
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31 | (4) |
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31 | (1) |
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32 | (3) |
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2.4 Effect of Many-Body Interactions |
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35 | (13) |
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2.4.1 Electron-Vibration Interaction |
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35 | (2) |
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2.4.1.1 Weak Coupling Regime |
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37 | (3) |
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2.4.1.2 Strong-Coupling Regime |
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40 | (3) |
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2.4.2 Electron-Electron Interaction |
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43 | (1) |
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43 | (2) |
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45 | (3) |
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2.5 Thermoelectric Transport |
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48 | (3) |
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2.6 First-Principles Simulations of Transport in Molecular Devices |
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51 | (1) |
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52 | (5) |
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52 | (5) |
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3 Fabricating Methods and Materials for Nanogap Electrodes |
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57 | (132) |
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57 | (2) |
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3.2 Mechanical Controllable Break Junctions |
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59 | (9) |
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3.3 Electrochemical and Chemical Deposition Method |
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68 | (7) |
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3.3.1 Electroplating and Feedback System |
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68 | (6) |
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3.3.2 Chemical Deposition |
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74 | (1) |
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3.4 Oblique Angle Shadow Evaporation |
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75 | (3) |
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3.5 Electromigration and Electrical Breakdown Method |
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78 | (11) |
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79 | (3) |
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82 | (2) |
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3.5.3 Electromigration Applications |
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84 | (5) |
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3.6 Molecular Scale Template |
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89 | (13) |
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89 | (5) |
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3.6.2 Inorganic Films as Templates |
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94 | (2) |
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3.6.3 On-Wire Lithography |
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96 | (4) |
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100 | (2) |
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102 | (6) |
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3.8 Scanning Probe Lithography and Conducting Probe-Atomic Force Microscopy |
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108 | (5) |
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108 | (3) |
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111 | (1) |
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3.8.3 Conducting Probe-Atomic Force Microscopy |
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112 | (1) |
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3.9 Nanogap Electrodes Prepared with Nonmetallic Materials |
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113 | (61) |
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113 | (1) |
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3.9.2 Nanogap Electrodes Made from Carbon Materials |
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114 | (1) |
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3.9.2.1 Advantages of Carbon Materials |
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114 | (1) |
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3.9.2.2 Carbon Nanotubes for Nanogap Electrodes |
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115 | (15) |
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130 | (23) |
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3.9.2.4 Silicon Nanogap Electrodes |
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153 | (18) |
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171 | (3) |
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174 | (15) |
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175 | (14) |
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4 Characterization Methods and Analytical Techniques for Nanogap Junction |
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189 | (50) |
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4.1 Current-Voltage Analysis |
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189 | (17) |
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4.1.1 Coherent Tunneling Transport |
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190 | (5) |
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4.1.2 Transition Voltage Spectroscopy |
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195 | (3) |
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4.1.3 Incoherent Transport |
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198 | (8) |
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4.2 Inelastic Tunneling Spectroscopy (IETS) |
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206 | (20) |
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4.2.1 Principle and Measurement of IETS |
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206 | (3) |
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4.2.2 Selection Rule and Charge Transport Pathway |
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209 | (5) |
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4.2.3 Line Shape of the IETS |
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214 | (4) |
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4.2.4 Application of the IETS |
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218 | (1) |
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4.2.5 Mapping the Charge Transport Pathway in Protein Junction by IETS |
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219 | (3) |
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4.2.6 STM Imaging by IETS |
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222 | (4) |
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4.3 Optical and Optoelectronic Spectroscopy |
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226 | (6) |
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232 | (7) |
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233 | (1) |
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234 | (5) |
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5 Single-Molecule Electronic Devices |
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239 | (62) |
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239 | (1) |
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5.2 Wiring Molecules into "Gaps": Anchoring Groups and Assembly Methods |
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240 | (12) |
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240 | (5) |
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5.2.2 Effect of Anchor-Bridge Orbital Overlaps on Conductance |
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245 | (5) |
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5.2.3 In Situ Chemical Reactions to Produce Covalent Contacts |
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250 | (2) |
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252 | (17) |
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5.3.1 Rectification Toward Diodes |
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255 | (1) |
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5.3.2 General Mechanisms for Molecular Rectification |
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256 | (1) |
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5.3.2.1 Aviram-Ratner Model |
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256 | (1) |
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5.3.2.2 Kornilovitch-Bratkovsky-Williams Model |
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257 | (1) |
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5.3.2.3 Datta-Paulsson Model |
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258 | (1) |
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5.3.3 Rectification Originated from Molecules |
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259 | (1) |
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5.3.3.1 D-σ-A and D-π-A Systems |
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259 | (1) |
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5.3.3.2 D-A Diblock Molecular System |
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260 | (4) |
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5.3.4 Rectification Stemming from Different Interfacial Coupling |
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264 | (1) |
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5.3.4.1 Different Electrodes |
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264 | (1) |
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265 | (1) |
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265 | (1) |
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5.3.4.4 Interfacial Distance |
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266 | (1) |
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5.3.5 Additional Molecular Rectifiers |
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267 | (2) |
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269 | (13) |
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5.4.1 Voltage Pulse Induced Switches |
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270 | (1) |
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5.4.2 Light-Induced Switching |
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271 | (4) |
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5.4.3 Switching Triggered by Chemical Process (Redox and pH) |
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275 | (3) |
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5.4.4 Spintronics-Based Switch |
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278 | (4) |
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5.5 Gating the Transport: Transistor-Like Single-Molecule Devices |
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282 | (9) |
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5.5.1 Electrostatic Gate Control |
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282 | (5) |
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287 | (1) |
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5.5.3 Electrochemical Gate Control |
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288 | (2) |
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5.5.4 Molecular Quantum Dots |
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290 | (1) |
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5.6 Challenges and Outlooks |
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291 | (10) |
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292 | (9) |
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6 Molecular Electronic Junctions Based on Self-Assembled Monolayers |
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301 | (44) |
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301 | (1) |
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6.2 Molecular Monolayers for Molecular Electronics Devices |
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302 | (12) |
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6.2.1 Monolayers Covalently Bonded to Noble Metals |
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303 | (6) |
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6.2.2 Monolayers Attached to Non-metal Substrates |
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309 | (3) |
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6.2.3 Langmuir-Blodgett Method |
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312 | (2) |
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314 | (15) |
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314 | (1) |
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6.3.1.1 Direct Evaporation |
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315 | (1) |
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6.3.1.2 Indirect Evaporation |
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316 | (3) |
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6.3.2 Make Top Contact by Soft Methods |
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319 | (1) |
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6.3.2.1 Lift-and-Float Approach |
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319 | (1) |
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6.3.2.2 Crosswire Junction |
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320 | (2) |
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6.3.2.3 Transfer Printing |
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322 | (1) |
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6.3.2.4 Graphene as Top Electrode |
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323 | (3) |
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6.3.2.5 Liquid Metal Contact |
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326 | (3) |
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6.4 Experimental Progress with Ensemble Molecular Junctions |
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329 | (5) |
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334 | (11) |
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335 | (10) |
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7 Toward Devices and Applications |
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345 | (55) |
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345 | (1) |
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7.2 Major Issues: Reliability and Robustness |
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346 | (12) |
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7.2.1 Single Molecular Device |
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347 | (1) |
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7.2.1.1 Top-Contact Junctions |
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347 | (1) |
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7.2.1.2 Planar Metallic Nanogap Electrodes |
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347 | (2) |
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7.2.1.3 Planar Nanogap Electrodes Based on Single Walled Carbon Nanotubes (SWCNTs) or Graphene |
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349 | (1) |
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7.2.1.4 The Absorption of Molecule on the Surface of SWCNTs or Graphene |
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350 | (1) |
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7.2.2 Molecular Device Based on Molecule Monolayer |
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351 | (2) |
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7.2.2.1 Bottom Electrodes |
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353 | (1) |
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7.2.2.2 Insulating Layer with Holes to Define the Size of the Bottom Electrodes |
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353 | (1) |
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7.2.2.3 Molecule Monolayer Formation |
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354 | (1) |
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354 | (4) |
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7.3 Potential Integration Solutions |
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358 | (13) |
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7.3.1 Carbon Nanotube or Graphene Interconnects |
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359 | (5) |
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7.3.2 Self-Assembled Monolayers for Integrated Molecular Junctions |
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364 | (4) |
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7.3.3 Cross Bar Architecture |
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368 | (3) |
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7.4 Beyond Simple Charge Transport |
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371 | (24) |
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371 | (4) |
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375 | (6) |
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7.4.3 Quantum Interference |
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381 | (5) |
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386 | (1) |
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7.4.4.1 SAM-Based Magnetic Tunnel Junctions |
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386 | (1) |
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7.4.4.2 Molecule Based Spin-Valves or Magnetic Tunnel Junctions |
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387 | (2) |
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7.4.4.3 Single Molecular Spin Transistor |
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389 | (2) |
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7.4.4.4 Single Molecular Nuclear Spin Transistor |
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391 | (2) |
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7.4.4.5 Molecule Based Hybrid Spintronic Devices |
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393 | (2) |
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7.5 Electrochemistry with Nanogap Electrodes |
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395 | (5) |
References |
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400 | (11) |
Index |
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