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E-grāmata: Nitride Wide Bandgap Semiconductor Material and Electronic Devices [Taylor & Francis e-book]

(Xidian University, Xi'an, PR of China), (Xidian University, Xi'an, PR of China), (Xidian University, Xi'an, PR of China)
  • Formāts: 392 pages
  • Izdošanas datums: 30-Jun-2020
  • Izdevniecība: CRC Press
  • ISBN-13: 9781315368856
Citas grāmatas par šo tēmu:
  • Taylor & Francis e-book
  • Cena: 249,01 €*
  • * this price gives unlimited concurrent access for unlimited time
  • Standarta cena: 355,74 €
  • Ietaupiet 30%
  • Formāts: 392 pages
  • Izdošanas datums: 30-Jun-2020
  • Izdevniecība: CRC Press
  • ISBN-13: 9781315368856
Citas grāmatas par šo tēmu:

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.