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E-grāmata: Organic Thin Film Transistor Integration - A Hybrid Approach: A Hybrid Approach [Wiley Online]

  • Formāts: 270 pages
  • Izdošanas datums: 06-Apr-2011
  • Izdevniecība: Blackwell Verlag GmbH
  • ISBN-10: 3527634444
  • ISBN-13: 9783527634446
Citas grāmatas par šo tēmu:
  • Wiley Online
  • Cena: 147,68 €*
  • * this price gives unlimited concurrent access for unlimited time
  • Formāts: 270 pages
  • Izdošanas datums: 06-Apr-2011
  • Izdevniecība: Blackwell Verlag GmbH
  • ISBN-10: 3527634444
  • ISBN-13: 9783527634446
Citas grāmatas par šo tēmu:
Research on organic electronics (or plastic electronics) is driven by the need to create systems that are lightweight, unbreakable, and mechanically flexible. With the remarkable improvement in the performance of organic semiconductor materials during the past few decades, organic electronics appeal to innovative, practical, and broad-impact applications requiring large-area coverage, mechanical flexibility, low-temperature processing, and low cost. Thus, organic electronics appeal to a broad range of electronic devices and products including transistors, diodes, sensors, solar cells, lighting, displays, and electronic identification and tracking devices A number of commercial opportunities have been identified for organic thin film transistors (OTFTs), ranging from flexible displays, electronic paper, radio-frequency identification (RFID) tags, smart cards, to low-cost disposable electronic products, and more are continually being invented as the technology matures. The potential applications for ?plastic electronics? are huge but several technological hurdles must be overcome. In many of these applications, transistor serves as a fundamental building block to implement the necessary electronic functionality. Hence, research in organic thin film transistors (OTFTs) or organic field effect transistors (OFETs) is eminently pertinent to the development and realization of organic electronics. This book presents a comprehensive investigation of the production and application of a variety of polymer based transistor devices and circuits. It begins with a detailed overview of Organic Thin Film Transistors (OTFTs) and discusses the various possible fabrication methods reported so far. This is followed by two major sections on the choice, optimization and implementation of the gate dielectric material to be used. Details of the effects of processing on the efficiency of the contacts are then provided. The book concludes with a chapter on the integration of such devices to produce a variety of OTFT based circuits and systems. The key objective is to examine strategies to exploit existing materials and techniques to advance OTFT technology in device performance, device manufacture, and device integration. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. Overall, a major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling the use of a well-established PECVD infrastructure, while not compromising the performance of electronics. The techniques established here are not limited to use in OTFTs only; the organic semiconductor and SiNx combination can be used in other device structures (e.g., sensors, diodes, photovoltaics). Furthermore, the approach and strategy used for interface optimization can be extended to the development of other materials systems.
Preface xiii
Glossary xv
1 Introduction
1(12)
1.1 Organic Electronics: History and Market Opportunities
3(10)
1.1.1 Large-Area Displays
4(1)
1.1.2 Rollable Displays
5(1)
1.1.3 Radio Frequency Identification (RFID) Tag
6(1)
1.1.4 Technological Challenges
6(1)
1.1.4.1 Device Performance
7(1)
1.1.4.2 Device Manufacture
8(1)
1.1.5 Scope and Organization
8(2)
References
10(3)
2 Organic Thin Film Transistor (OTFT) Overview
13(42)
2.1 Organic Semiconductor Overview
14(13)
2.1.1 Basic Properties
15(2)
2.1.2 Charge Transport
17(1)
2.1.3 Microstructure and Molecular Alignment
18(3)
2.1.4 Material Development and Classifications
21(1)
2.1.4.1 Small Molecules
22(2)
2.1.4.2 Polymers
24(1)
2.1.4.3 n-Type Semiconductors
25(1)
2.1.5 Sensitivity to Environmental Influences
26(1)
2.2 OTFT Operation and Characteristics
27(7)
2.2.1 OTFT Parameter Extraction
30(2)
2.2.2 Contact Resistance Extraction
32(2)
2.2.3 Desirable OTFT Characteristics
34(1)
2.3 OTFT Device Architecture
34(4)
2.3.1 Top-Contact and Bottom-Contact OTFTs
35(2)
2.3.2 Top-Gate, Bottom-Gate, and Dual-Gate OTFTs
37(1)
2.4 OTFT Device Material Selection
38(11)
2.4.1 Organic Semiconductor
39(2)
2.4.2 Gate Dielectric
41(2)
2.4.3 Electrodes/Contacts
43(2)
2.4.4 Substrate
45(2)
2.4.5 Encapsulation Strategies
47(2)
2.5 Summary
49(6)
References
49(6)
3 OTFT Integration Strategies
55(46)
3.1 Technological Challenge in OTFT Integration
55(3)
3.2 Overview of Processing and Fabrication Techniques
58(18)
3.2.1 Deposition Methods for Organic Semiconductors
61(1)
3.2.1.1 Vacuum Evaporation
61(1)
3.2.1.2 Solution-Processed Deposition
61(1)
3.2.2 Patterning by Shadow Mask
62(2)
3.2.3 Patterning by Photolithography
64(1)
3.2.3.1 Photolithography Basics
65(1)
3.2.3.2 Photolithography Considerations for OTFTs
66(2)
3.2.4 Patterning by Inkjet Printing
68(3)
3.2.4.1 Inkjet Printing of OTFTs
71(1)
3.2.4.2 Improved Resolution by Surface-Energy Assisted Inkjet Printing
72(1)
3.2.4.3 Printing Peripheral Circuit: Vias and Interconnects
73(1)
3.2.5 Microcontact Printing
73(2)
3.2.6 Other Deposition Methods
75(1)
3.3 OTFT Fabrication Schemes
76(18)
3.3.1 Basic One-Mask Processing Scheme for Bottom-Gate OTFT
76(2)
3.3.2 Photolithography Scheme for Fully-Patterned and Fully-Encapsulated Bottom-Gate OTFT
78(1)
3.3.2.1 Directly Patterned OTFTs
79(2)
3.3.2.2 Indirectly Patterned OTFTs
81(2)
3.3.3 Hybrid Photolithography-Inkjet Printing Scheme for Fully-Patterned Bottom-Gate OTFT
83(2)
3.3.4 Photolithography Scheme for Top-Gate and Dual-Gate OTFTs
85(2)
3.3.4.1 Top-Gate OTFT
87(3)
3.3.4.2 Dual-Gate OTFT
90(2)
3.3.4.3 Analysis
92(1)
3.3.5 Fabrication Scheme Comparisons
93(1)
3.4 Summary and Contributions
94(7)
References
96(5)
4 Gate Dielectrics by Plasma Enhanced Chemical Vapor Deposition (PECVD)
101(46)
4.1 Overview of Gate Dielectrics
101(4)
4.1.1 Organic Dielectrics
101(3)
4.1.2 Inorganic Dielectrics
104(1)
4.2 Experimental Details and Characterization Methods
105(3)
4.2.1 Deposition Conditions of PECVD Silicon Nitride (SiNx)
105(1)
4.2.2 Thin Film Characterization Methods
105(1)
4.2.2.1 Fourier Transform Infrared Spectroscopy (FTIR)
106(1)
4.2.2.2 Ellipsometry
106(1)
4.2.2.3 X-Ray Photoelectron Spectroscopy (XPS)
106(1)
4.2.2.4 Atomic Force Microscopy (AFM)
107(1)
4.2.2.5 Contact Angle Analysis
107(1)
4.3 Material Characterization of PECVD SiNx Films
108(16)
4.3.1 Bulk/Structural Characterization
108(1)
4.3.1.1 FTIR Spectroscopy
108(3)
4.3.1.2 Refractive Index
111(2)
4.3.1.3 [ N]/[ Si] Ratio
113(1)
4.3.2 Surface Characterization
114(1)
4.3.2.1 Contact Angle
114(1)
4.3.2.2 Surface Morphology and Roughness
115(1)
4.3.2.3 Chemical Composition
116(1)
4.3.3 Electrical Characterization
117(1)
4.3.3.1 I-V Measurements
117(3)
4.3.3.2 C-V Measurements
120(1)
4.3.4 Summary
121(3)
4.4 Electrical Characterization of OTFTs with PECVD Gate Dielectric
124(15)
4.4.1 300 °C SiNx Gate Dielectrics
125(4)
4.4.2 150° C SiNx Gate Dielectrics
129(2)
4.4.3 Stacked SiNx Gate Dielectrics
131(3)
4.4.4 200° C SiNx Gate Dielectrics
134(2)
4.4.5 OTFTs on Plastic Substrates
136(3)
4.5 Summary and Contributions
139(8)
References
142(5)
5 Dielectric Interface Engineering
147(38)
5.1 Background
148(6)
5.1.1 Self Assembled Monolayer (SAM)
148(3)
5.1.2 Oxygen Plasma Treatment
151(1)
5.1.2.1 Basics of Plasma Processing (Etching)
152(2)
5.2 Experimental Details
154(1)
5.3 Impact of Dielectric Surface Treatments
155(11)
5.3.1 Electrical Characterization
156(2)
5.3.2 Interface Characterization
158(1)
5.3.2.1 Contact Angle
159(2)
5.3.2.2 Surface Roughness
161(2)
5.3.2.3 Chemical Composition
163(1)
5.3.3 Analysis
164(2)
5.4 Impact of Oxygen Plasma Exposure Conditions
166(15)
5.4.1 Electrical Characterization
167(1)
5.4.1.1 Impact of Exposure Duration
167(2)
5.4.1.2 Impact of Exposure Power
169(1)
5.4.2 Interface Characterization
170(1)
5.4.2.1 Contact Angle
170(2)
5.4.2.2 Surface Roughness
172(1)
5.4.2.3 Chemical Composition
173(4)
5.4.2.4 XPS Depth Profile Analysis
177(1)
5.4.3 Analysis and Discussion
178(3)
5.5 Summary and Contributions
181(4)
References
182(3)
6 Contact Interface Engineering
185(24)
6.1 Background
186(4)
6.1.1 Charge Injection
186(3)
6.1.2 Alkanethiol SAM on Metals
189(1)
6.2 Experimental Details
190(2)
6.3 Impact of Contact Surface Treatment by Thiol SAM
192(9)
6.3.1 Electrical Characterization
192(5)
6.3.2 Interface Characterization
197(1)
6.3.2.1 Contact Angle
197(1)
6.3.2.2 Surface Roughness
198(1)
6.3.2.3 Chemical Composition
198(1)
6.3.3 Analysis
199(2)
6.4 Impact of Execution Sequence of Surface Treatment
201(4)
6.4.1 Electrical Characterization
202(1)
6.4.2 Interface Characterization
203(1)
6.4.2.1 Contact Angle
203(1)
6.4.2.2 Surface Roughness
203(1)
6.4.2.3 Chemical Composition
204(1)
6.5 Summary and Contributions
205(4)
References
206(1)
Further Reading
207(2)
7 OTFT Circuits and Systems
209(30)
7.1 OTFT Requirements for Circuit Applications
209(4)
7.1.1 Speed
210(2)
7.1.2 Leakage
212(1)
7.1.3 Current Drive Capacity
212(1)
7.1.4 Stability
213(1)
7.2 Applications
213(5)
7.2.1 Displays
213(1)
7.2.2 RFID Tags
214(4)
7.3 Circuit Demonstration
218(14)
7.3.1 Fabrication Schemes
218(1)
7.3.2 Inverters
219(4)
7.3.3 Current Mirrors
223(2)
7.3.4 Ring Oscillators
225(1)
7.3.5 Display Pixel Circuits
226(1)
7.3.5.1 Conventional 2-TFT Pixel Circuit
226(3)
7.3.5.2 Compensating 2-TFT Pixel Circuit
229(2)
7.3.5.3 4-TFT Current Mirror Pixel Circuit
231(1)
7.4 Summary, Contributions, and Outlook
232(7)
7.4.1 Active-Matrix Backplane Integration
233(1)
7.4.2 Back-End Process Integration: Bonding and Packaging
234(1)
References
235(2)
Further Reading
237(2)
8 Outlook and Future Challenges
239(6)
8.1 Device Performance
240(1)
8.2 Device Manufacture
241(1)
8.3 Device Integration
242(3)
References
243(2)
Index 245
Flora M. Li is a Research Associate at the Centre of Advanced Photonics and Electronics (CAPE) at the University of Cambridge, UK. She received her Ph.D. degree in Electrical and Computer Engineering from the University of Waterloo, Canada in 2008. She was a Visiting Scientist at Xerox Research Centre of Canada (XRCC) from 2005-2008. Her research interests are in the field of nano- and thin-film technology for applications in large area and flexible electronics, including displays, sensors, photovoltaics, circuits and systems. She has co-authored a book entitled CCD Image Sensors in Deep-Ultraviolet (2005), and published in various scientific journals.

Arokia Nathan holds the Sumitomo/STS Chair of Nanotechnology at the London Centre for Nanotechnology, University College London, UK. He is also the CTO of Ignis Innovation Inc., Waterloo, Canada, a company he founded to commercialize technology on thin film silicon backplanes on rigid and flexible substrates for large area electronics. He received his Ph.D. in Electrical Engineering from the University of Alberta, Canada, in 1988. In 1987, he joined LSI Logic Corp., Santa Clara, CA, USA where he worked on advanced multi-chip packaging techniques. Subsequently, he was at the Institute of Quantum Electronics, ETH Zurich, Switzerland. In 1989, he joined the Department of Electrical and Computer Engineering, University of Waterloo. In 1995, he was a Visiting Professor at the Physical Electronics Laboratory, ETH Zurich, Switzerland. In 1997 he held the DALSA/NSERC Industrial Research Chair in sensor technology, and was a recipient of the 2001 Natural Sciences and Engineering Research Council E.W.R. Steacie Fellowship. In 2004 he was awarded the Canada Research Chair in nano-scale flexible circuits. In 2005/2006, he was a Visiting Professor in the Engineering Department, University of Cambridge, U.K. In 2006, he joined the London Centre for Nanotechnology and is a recipient of the Royal Society Wolfson Research Merit Award. He has published extensively in the field of sensor technology, CAD, and thin film transistor electronics, and has over 40 patents filed/awarded. He is the co-author of two books, Microtransducer CAD and CCD Image Sensors in Deep-Ultraviolet, published in 1999 and 2005, respectively, and serves on technical committees and editorial boards at various capacities.