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E-grāmata: Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO - Fundamentals: Fundamentals [Wiley Online]

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  • Formāts: 352 pages
  • Sērija : Wiley Series in Display Technology
  • Izdošanas datums: 21-Oct-2016
  • Izdevniecība: John Wiley & Sons Inc
  • ISBN-10: 1119247284
  • ISBN-13: 9781119247289
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  • Wiley Online
  • Cena: 132,41 €*
  • * this price gives unlimited concurrent access for unlimited time
Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO - Fundamentals: FundamentalsPalielināt
  • Formāts: 352 pages
  • Sērija : Wiley Series in Display Technology
  • Izdošanas datums: 21-Oct-2016
  • Izdevniecība: John Wiley & Sons Inc
  • ISBN-10: 1119247284
  • ISBN-13: 9781119247289
Citas grāmatas par šo tēmu:
Wiley Online E-booksMore info about Wiley Online
Rokasgrāmatas mājas lapa: https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247289

Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium–gallium–zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current.  C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide
semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe  applications of CAAC-IGZO in flat-panel displays and LSI devices.

Key features:

  • Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO
  • Presents crystallographic overviews of IGZO and related compounds.
  • Offers an in-depth understanding of CAAC-IGZO.
  • Explains the fabrication method of CAAC-IGZO thin films.
  • Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience.
  • Describes the manufacturing process the CAAC-IGZO transistors and introduces
    the device application using CAAC-IGZO.

About the Editors ix
List of Contributors
xi
Series Editor's Foreword xii
Preface xiv
Acknowledgments xvii
Introduction xviii
1 Layered Compounds in the In2O3--Ga2O3--ZnO System and Related Compounds in the Ternary System
1(49)
1.1 Introduction
1(2)
1.2 Syntheses and Phase Equilibrium Diagrams
3(13)
1.2.1 Phase Equilibrium Diagrams in the System R2O3--Fe2O3--FeO (R = Y and Yb)
4(2)
1.2.2 Phase Equilibrium Diagram for the System In2O3--A2O3--BO (A = Ga and Fe; B = Zn, Mg, Cu, and Co)
6(6)
1.2.3 Phase Equilibrium Diagram of the System In2O3--A2O3--ZnO (A = Fe and Al)
12(4)
1.2.4 Other Layered-Structure Compounds
16(1)
1.3 Crystal Structures
16(21)
1.3.1 Crystal Structures of InGaO3(ZnO)m (m = 1, 2, 3, and 4)
17(13)
1.3.2 Lattice Constants of InAO3(ZnO)m (A = In, Fe, Ga, and Al)
30(5)
1.3.3 Structural Characteristics of RAO(BO)m Crystals
35(2)
1.4 Latest Topics in Crystalline IGZO
37(6)
1.4.1 Interest in Non-conventional Compounds, InGaO3(ZnO)m (m: non-integral number)
37(1)
1.4.2 Crystal Structures and Local Structures
38(3)
1.4.3 Atomic Distribution in Crystalline IGZO(1:1:1.5)
41(1)
1.4.4 Influence of Composition of Crystalline IGZO
41(2)
Appendix 1 A High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy and Annular Bright-Field Scanning Transmission Electron Microscopy
43(7)
1.A.1 Transmission Electron Microscopy
43(1)
1.A.2 Scanning Transmission Electron Microscopy
44(2)
References
46(4)
2 Systematic View of CAAC-IGZO and Other Crystalline IGZO Thin Films
50(103)
2.1 Introduction
50(3)
2.2 Fabrication Process
53(17)
2.2.1 Features of CAAC-IGZO
54(1)
2.2.2 Relation between Deposition Conditions and Crystallinity
54(7)
2.2.3 Comparison with Other Apparatus
61(1)
2.2.4 2D-XRD Analysis
62(4)
2.2.5 Inhibition of Crystal Growth by Impurities
66(3)
2.2.6 Summary
69(1)
2.3 Structural Analysis
70(14)
2.3.1 Features of CAAC-IGZO
70(2)
2.3.2 Structural Analysis by TEM
72
2.3.3 Evaluation of Crystal Morphology in CAAC-IGZO
11(72)
2.3.4 Summary
83(1)
2.4 Deposition Mechanism
84(14)
2.4.1 Introduction
84(4)
2.4.2 Formation of Nanoclusters in CAAC-IGZO Thin Films
88(3)
2.4.3 Lateral Growth Model of IGZO Nanoclusters
91(3)
2.4.4 Discussion on Growth Mechanism
94(4)
2.4.5 Summary
98(1)
2.5 Structural Stability
98(17)
2.5.1 Introduction
98(1)
2.5.2 Electron Diffraction Analysis of CAAC-IGZO and nc-IGZO Films
99(1)
2.5.3 NBED Analysis of Nanoscale Region in nc-IGZO Film
100(2)
2.5.4 Stability Against Electron-Beam Irradiation
102(2)
2.5.5 Measurement of Nanoclusters in CAAC-IGZO and nc-IGZO Films
104(4)
2.5.6 Influence of Deposition Pressure on Density of IGZO Film
108(4)
2.5.7 Chemical Stability
112(2)
2.5.8 Summary
114(1)
2.6 Single-Crystal and Polycrystalline IGZO
115(10)
2.6.1 Introduction
115(1)
2.6.2 Crystalline IGZO Formed by Thermal Annealing
115(3)
2.6.3 Crystalline IGZO Fabricated by Laser Annealing
118(7)
2.7 Researching More Highly Functional IGZO Material
125(10)
2.7.1 Homologous Series of IGZO
125(4)
2.7.2 Constituent Elements of IGZO and their Influence on Properties
129(1)
2.7.3 Selection of High-Mobility IGZO Material in Terms of Solid-Solution Region
130(1)
2.7.4 Evaluation Results of IGZO (In: Ga : Zn = 4 : 2 : 3) Film
130(4)
2.7.5 CAAC-IGZO FET Characteristics of IGZO(4:2:3)
134(1)
2.7.6 Summary
134(1)
Appendix 2.A Discovery of CAAC-IGZO
135(2)
Appendix 2.B Selected-Area Electron Diffraction and Nano-Beam Electron Diffraction
137(5)
2.B.1 Diffraction Method
137(1)
2.B.2 Electron Diffraction
138(4)
Appendix 2.C Electron Diffraction Simulation of IGZO
142(1)
Appendix 2.D Quantitative Evaluation of Alignment of IGZO Using NBED Method
143(4)
Appendix 2.E Crystallinity of IGZO Thin Film Deposited by Pulsed Laser Deposition
147(6)
2.E.1 Introduction
147(1)
2.E.2 Crystallinity of IGZO Thin Film Deposited by Pulsed Laser Deposition
148(2)
References
150(3)
3 Fundamental Properties of IGZO
153(63)
3.1 Introduction
153(2)
3.2 Band Structure
155(6)
3.2.1 Introduction
155(1)
3.2.2 Optical Characteristics and Bandgap
155(3)
3.2.3 Band Structure and Effective Mass
158(3)
3.2.4 Summary
161(1)
3.3 Defect Levels in IGZO Bandgaps
161(18)
3.3.1 Introduction
161(1)
3.3.2 Evaluation of Oxygen Vacancy and Defect Levels in IGZO Thin Films
162(1)
3.3.3 Low-Temperature Photoluminescence
163(1)
3.3.4 Constant Photocurrent Method
163(4)
3.3.5 Deep Defect Level by Calculation
167(3)
3.3.6 Oxygen Vacancy and Crystallinity of IGZO
170(4)
3.3.7 Observations of Oxygen in IGZO
174(3)
3.3.8 Summary
177(2)
3.4 Origin of Main Donor
179(11)
3.4.1 Introduction
179(1)
3.4.2 Relationship between Hydrogen Concentration and Conductivity
179(3)
3.4.3 Quantitative Relationship between Carrier and Hydrogen Concentrations
182(1)
3.4.4 Stable Structure for Coexistence of Oxygen Vacancy and Hydrogen
183(1)
3.4.5 Energy Level of Donor States
184(1)
3.4.6 Thermal Stability of Hydrogen Substituting Oxygen
185(4)
3.4.7 Summary
189(1)
3.5 Electrical Conduction Mechanisms
190(9)
3.5.1 Introduction
190(1)
3.5.2 Dominant Scattering Center in Crystalline IGZO
191(3)
3.5.3 Theoretical Model of Electron Mobility for In-Rich IGZO
194(4)
3.5.4 Conclusion and Some Ideas for Conduction Mechanisms in IGZO
198(1)
3.6 Summary
199(1)
Appendix 3.A X-Ray Reflectivity and Constant Photocurrent Method
200(5)
3.A.1 X-Ray Reflectivity
200(2)
3.A.2 Constant Photocurrent Method
202(3)
Appendix 3.B First-Principles Calculation Methods
205(11)
3.B.1 Search for Stable Distribution of Ga and Zn Atoms in InGaZn04
206(3)
3.B.2 Formation of Amorphous IGZO Model
209(2)
3.B.3 Defect Valuation by Calculation
211(3)
References
214(2)
4 CAAC-IGZO Field-Effect Transistor
216(69)
4.1 Physics of MOSFETs
216(16)
4.1.1 Classification of MOSFETs
217(2)
4.1.2 Operating Mechanism of CAAC-IGZO FET
219(10)
4.1.3 FET Characteristics and Performance Indexes
229(3)
4.2 Electrical Characteristics of CAAC-IGZO FET
232(26)
4.2.1 Current-Voltage Characteristics of CAAC-IGZO FET
232(3)
4.2.2 Normally-Off Threshold Voltage of CAAC-IGZO FET
235(2)
4.2.3 Extremely Low Off-State Current of CAAC-IGZO FET
237(17)
4.2.4 Frequency Characteristics of CAAC-IGZO FET
254(4)
4.3 Comparison between CAAC-IGZO and Si FETs
258(8)
4.3.1 Off-State Current
259(1)
4.3.2 Saturation Characteristics
260(3)
4.3.3 Short-Channel Effects
263(3)
4.4 Advantages of CAAC-IGZO as FET Material
266(15)
4.4.1 Effects of CAAC Morphology on IGZO Thin-Film and FET Characteristics
266(6)
4.4.2 Application to Large-Sized Devices
272(2)
4.4.3 Multi-layered CAAC-IGZO
274(6)
4.4.4 Impurity Blocking Effects of CAAC-IGZO
280(1)
4.5 Summary
281(4)
References
282(3)
5 Device Application Using CAAC-IGZO
285(26)
5.1 Introduction
285(1)
5.2 CAAC-IGZO FETs
286(12)
5.2.1 Bottom-Gate Top-Contact Structure
287(5)
5.2.2 Top-Gate Top-Contact Structure
292(1)
5.2.3 Top-Gate Self-aligned Structure
293
5.2.4 Summary
291(7)
5.3 Application to LSI
298(6)
5.4 Application to Displays
304(5)
5.5 Market Prospects
309(2)
References
309(2)
Appendix: Unit Prefix 311(1)
Index 312
Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JAPAN Dr. Shunpei Yamazaki is an authority on semiconductors, memory devices, and liquid crystal displays. Listed on over 4,000 US utility patents, Dr. Yamazaki was named in the Guinness Book of World Records as holding the most patents in the world; hailed the most prolific inventor in history by USA Today (in 2005). His most notable work is on the thin-film transistor -- a significant discovery being a crystalline structure in Indium gallium zinc oxide (IGZO) material, which he discovered "by chance" in 2009. Today Dr. Yamazaki is President of the Semiconductor Energy Laboratory (SEL), where he and his team pioneered the unique development of ultra-low-power devices using CAAC-IGZO technology. A joint venture with the Sharp Corporation manufacturing smartphones using crystalline oxide semiconductors (IGZO) is a global first. In 2015 Dr. Yamazaki received the SID (Society for Information Display) Special Recognition Award for "discovering CAAC-IGZO semiconductors, leading its practical application, and paving the way to next-generation displays." His paper on CAAC-IGZO ranked in the top 15 most downloaded papers of Wiley Electrical Engineering and Communications Technology journals, 2014. Dr. Yamazaki is also an IEEE Life Fellow.

Noboru Kimizuka, Kimizuka Institute for Natural Philosophy, Poland Noboru Kimizuka: director of Kimizuka Institute for Natural Philosophy in Poland and adviser of Semiconductor Energy Laboratory, Co., Ltd. He received a Doctor of Science degree from Tokyo Institute of Technology. He joined in the National Institute for Research in Inorganic Materials (NIRIM) of Science and Technology Agency in 1967 (The institute later became the National Institute for Materials Science.) In 1985, he synthesized crystalline IGZO for the first time in the world at NIRIM. Since then, he devoted himself for developing homologous IGZO for about ten years. After he left NIRIM, he served as a researcher and a visiting professor, teaching young people at universities in the U.S., Britain, Mexico, Taiwan, South Korea, and Japan. He is a member of the Chemical Society of Japan, the Ceramic Society of Japan, the Physical Society of Japan, and American Ceramic Society.
Permanent link: https://www.kriso.lv/db/9781119247289_pe.html
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