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E-grāmata: Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO - Application to Displays: Application to Displays [Wiley Online]

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  • Formāts: 432 pages
  • Sērija : Wiley Series in Display Technology
  • Izdošanas datums: 27-Jan-2017
  • Izdevniecība: John Wiley & Sons Inc
  • ISBN-10: 111924739X
  • ISBN-13: 9781119247395
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  • Cena: 132,41 €*
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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO - Application to Displays: Application to DisplaysPalielināt
  • Formāts: 432 pages
  • Sērija : Wiley Series in Display Technology
  • Izdošanas datums: 27-Jan-2017
  • Izdevniecība: John Wiley & Sons Inc
  • ISBN-10: 111924739X
  • ISBN-13: 9781119247395
Citas grāmatas par šo tēmu:
Wiley Online E-booksMore info about Wiley Online
Rokasgrāmatas mājas lapa: https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395
This book highlights the display applications of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high-productivity manufacturing.

The applications of CAAC-IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high-resolution and flexible organic light-emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC-IGZO enables LCDs with extremely low refresh rate that provides ultra-low power consumption in a wide range of use cases.

Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2?}V-s, and it is expected to potentially exceed 100 cm2?}V-s as high as that of LTPS.

A further two books in the series will describe the fundamentals of CAAC-IGZO, and the application to LSI devices.

Key features:

• Introduces different oxide semiconductor field-effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel-integrated driving circuits.

• Reviews fundamentals and presents device architectures for high-performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology.

• Explains how oxide semiconductor thin-film transistors drastically can improve resolution and lower power consumption of LCDs.
About the Editors ix
List of Contributors
xi
Series Editor's Foreword xiii
Preface xv
Acknowledgments xviii
1 Introduction
1(20)
1.1 History of Displays
3(1)
1.2 Requirement for Displays
4(1)
1.3 Transistor Technology for Displays
5(16)
1.3.1 Comparison of Silicon and Oxide Semiconductors
6(2)
1.3.2 FETs in LCDs
8(3)
1.3.3 FETs in OLED Displays
11(3)
1.3.4 Recent FET Technologies
14(3)
1.3.5 Development of OLED Displays
17(2)
References
19(2)
2 Applications of CAAC-IGZO FETs to Displays
21(117)
2.1 Introduction
21(3)
2.2 Bottom-Gate Top-Contact FET
24(38)
2.2.7 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure
27(1)
2.2.2 GI Formation
27(6)
2.2.3 Formation of Buried Channel by Stacked Active Layer
33(9)
2.2.4 Baking Treatment of CAAC-IGZO
42(3)
2.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes
45(2)
2.2.6 Cleaning of the Back Channel
47(5)
2.2.7 Copper Wiring for S/D Electrodes
52(10)
2.3 Top-Gate Self-Aligned FET
62(9)
2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs
64(1)
2.3.2 Formation of GE/GI Patterns
65(1)
2.3.3 Formation of S/D Regions
66(4)
2.3.4 GI Thinning and L Reduction
70(1)
2.4 Characteristics of CAAC-IGZO FET
71(38)
2.4.1 Current Drivability
71(23)
2.4.2 Low Off-State Current
94(4)
2.4.3 Normally-Off Id--Vg Characteristics and Small Threshold-Voltage Variation
98(5)
2.4.4 Saturability of Id--Vd Characteristics
103(6)
2.4.5 Summary
109(1)
2.5 Density of States and Device Reliability
109(15)
2.5.7 Introduction
110(1)
2.5.2 Measurement of Defect States in IGZO Film
111(4)
2.5.3 Correlation between Oxygen Vacancies and FET Characteristics
115(2)
2.5.4 Defect States in Silicon-Oxide Film
117(5)
2.5.5 NBITS Mechanism
122(1)
2.5.6 Summary
122(2)
2.6 Oxide Conductor Electrode Process
124(14)
2.6.7 Introduction
124(1)
2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity
124(7)
2.6.3 LCD Device with Oxide Conductor Electrode
131(3)
2.6.4 Summary
134(1)
References
135(3)
3 Driver Circuit
138(45)
3.1 Introduction
138(1)
3.2 Gate-Driver Circuit
139(15)
3.2.1 Logic Circuit and Bootstrapping
139(2)
3.2.2 Flip-Flops
141(8)
3.2.3 Reduction in Area of Gate-Driver Circuit
149(5)
3.3 Source-Driver Circuit
154(29)
3.3.1 Introduction
154(3)
3.3.2 Demultiplexer
157(4)
3.3.3 8-Bit Source-Driver IC for 13.3-Inch, 60-Hz, 8-Bit 8K OLED Panels
161(11)
3.3.4 12-Bit Source-Driver IC for 13.3-Inch, 120-Hz, 12-Bit 8K OLED Panels
172(7)
3.3.5 Full-Driver IC
179(2)
References
181(2)
4 Application to OLED Displays
183(123)
4.1 Introduction
183(2)
4.2 Device Architecture for High-Performance OLED
185(76)
4.2.7 Fundamentals of OLEDs
185(16)
4.2.2 Organic Material/Metal Oxide Composite
201(20)
4.2.3 Exciplex--Triplet Energy Transfer for High-Performance Phosphorescent OLEDs
221(19)
4.2.4 Enhancement in the Emission Efficiency of Fluorescent OLEDs
240(13)
4.2.5 Increase in Outcoupling Efficiency of OLEDs by Molecular Orientation
253(8)
4.3 OLED Structure for Higher Pixel Density
261(13)
4.3.1 Tandem OLED
262(7)
4.3.2 WTC Structure
269(3)
4.3.3 Measures for Crosstalk
272(2)
4.4 Circuit Design for OLED Displays
274(19)
4.4.1 Driving OLED Displays
274(6)
4.4.2 External Compensation
280(2)
4.4.3 Internal Compensation
282(9)
4.4.4 Arrangement of Pixel Circuit and High Resolution
291(2)
4.5 Characteristics of OLED Displays
293(13)
4.5.1 Application of WTC Structure to Displays
293(2)
4.5.2 Performance of OLED and LCDs
295(5)
References
300(6)
5 Flexible Displays
306(43)
5.1 Introduction
306(3)
5.1.1 OLED and Flexible Displays
306(3)
5.2 Flexible Display Fabrication Technology
309(29)
5.2.1 Separation Layer
309(1)
5.2.2 Separation Process
309(7)
5.2.3 Transfer Process of Flexible Displays
316(4)
5.2.4 Moisture-Blocking Property of the Flexible OLED Display
320(6)
5.2.5 Bending Test
326(2)
5.2.6 System Automation by Transfer Technology Apparatus (TT Apparatus)
328(10)
5.3 Prototypes of Flexible OLED Displays
338(11)
References
347(2)
6 Application to Liquid Crystal Displays
349(49)
6.1 Introduction
349(2)
6.2 Technology for Higher Resolution
351(7)
6.2.1 Introduction
351(1)
6.2.2 The Pixel Circuit
351(2)
6.2.3 Pixel Layout and Aperture Ratio of an LCD
353(2)
6.2.4 Applicability of Large-Sized Displays
355(3)
6.3 Driving Method for Power Saving
358(18)
6.3.1 Introduction
358(1)
6.3.2 Saving Power with Low-Frequency Driving
358(2)
6.3.3 Low-Frequency Driving with CAAC-IGZO
360(7)
6.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving
367(9)
6.3.5 Conclusions
376(1)
6.4 Characteristics of LCDs
376(22)
6.4.1 Introduction
376(1)
6.4.2 High-Resolution Fringe-Field Switching LCDs
376(12)
6.4.3 A 434-PPI Reflective LCD
388(7)
References
395(3)
Appendix 398(2)
Index 400
Shunpei Yamazaki, Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JAPAN Dr. Shunpei Yamazaki is an authority on semiconductors, memory devices, and liquid crystal displays. Listed on over 4,000 US utility patents, Dr. Yamazaki was named in the Guinness Book of World Records as holding the most patents in the world; hailed the most prolific inventor in history by USA Today (in 2005). His most notable work is on the thin-film transistor -- a significant discovery being a crystalline structure in Indium gallium zinc oxide (IGZO) material, which he discovered "by chance" in 2009. Today Dr. Yamazaki is President of the Semiconductor Energy Laboratory (SEL), where he and his team pioneered the unique development of ultra-low-power devices using CAAC-IGZO technology. A joint venture with the Sharp Corporation manufacturing smartphones using crystalline oxide semiconductors (IGZO) is a global first. In 2015 Dr.Yamazaki received the SID (Society for Information Display) Special Recognition Award for "discovering CAAC-IGZO semiconductors, leading its practical application, and paving the way to next-generation displays." His paper on CAAC-IGZO ranked in the top 15 most downloaded papers of Wiley Electrical Engineering and Communications Technology journals, 2014. Dr. Yamazaki is also an IEEE Life Fellow.

Tetsuo Tsutsui, Kyushu University, Japan Tetsuo Tsutsui received his BS (1967) and MS (1969) in Applied Chemistry from Kyushu University, Japan, and Dr. of Engineering in Materials Science from Graduate School of Engineering Sciences of the same university in 1977. He was a professor at Graduate School of Engineering Sciences, Kyushu University from 1986 to 2008. His research interests were electronic and optical properties of molecular solids and organic semiconductor electronics, including organic light-emitting diodes, organic FETs, and organic photovoltaic devices. He has published more than 200 original and 50 review papers. He received The Polymer Society Award (Polymer Society, Japan, 1995), Chemical Society of Japan Award (2008), Medal with Purple Ribbon (Cabinet Office of the Japanese Government, 2009), and Jan Rajchman Prize (Society for Information Displays, 2011). He is a Fellow of Japan Society of Applied Physics and a Professor Emeritus, Kyushu University.
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