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E-grāmata: Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, Italy

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  • Formāts: PDF+DRM
  • Sērija : NATO Science Series B: 342
  • Izdošanas datums: 06-Dec-2012
  • Izdevniecība: Springer-Verlag New York Inc.
  • Valoda: eng
  • ISBN-13: 9781461519676
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Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, ItalyPalielināt
  • Formāts: PDF+DRM
  • Sērija : NATO Science Series B: 342
  • Izdošanas datums: 06-Dec-2012
  • Izdevniecība: Springer-Verlag New York Inc.
  • Valoda: eng
  • ISBN-13: 9781461519676
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The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

Recenzijas

`This work is outstanding....The charm of the work lies herein, that it presents in a coherent fashion a great deal of valuable material. I strongly recommend it in particular to graduate students in experimental semiconductor physics.' Contemporary Physics

Papildus informācija

Springer Book Archives
Lectures.- to Quantum Transport.- Traditional Modelling of Semiconductor
Devices.- Quantum Confined Systems: Wells, Wires, and Dots.- Fabrication of
Nanoscale Devices.- Artificial Impurities in Quantum Wires and Dots.-
Mesoscopic DevicesWhat are They.- Trajectories in Quantum Transport.-
Two-Dimensional Dynamics of Electrons Passing Through a Point Contact.-
Localized Acoustic Phonons in Low Dimensional Structures.- Conductance in
Quantum Boxes: Interference and Single Electron Effects.- Quantum Traffic
Theory of Single Electron Transport in Nanostructures.- Some Recent
Developments in Quantum Transport in Mesoscopic Structures and Quantum
Wells.- Density Matrix Simulations of Semiconductor Devices.- Effects of
Band-Structure and Electric Fields on Resonant Tunneling Dynamics.-
Interacting and Coherent Time-Dependent Transport in Semiconductor
Heterostructures.- Recursive Tight-Binding Greens Function Method:
Application to Ballistic and Dissipative Transport in Semiconductor
Nanostructures.- Screening and Many-Body Effects in Low-Dimensional Electron
Systems.- Quantum Kinetics in Laser Pulse Excited Semiconductors.-
Statistical Fluctuations in Devices.- Multiband and Multidimensional Analysis
of Quantum Transport in Ultrasubmicron Devices.- Contributed Papers.- Vapor
Etching of Beam-Deposited Carbon on Silicon Dioxide Films.- Electron Heating
in GaAs due to Electron-Electron Interactions.- Transport and Optical
Spectroscopy of an Array of Quantum Dots with Strong Coulomb Correlations.-
Three-Dimensional Quantum Transport Simulations of Transmission Fluctuations
in a Quantum Dot.- Acoustic Scattering of Electrons in a Narrow Quantum
Well.- Non-Ohmic Phonon-Assisted Landauer Resistance.- Acoustic Phonon
Relaxation in Valence Band Quantum Wells.- StationaryTransport of Holes in
GaAs.- Beating Pattern in the Magneto-Oscillations of the 2DEG in
Semiconductor Quantum Wells.- Ultrafast Coherent and Incoherent Dynamics in
Photoexcited Semiconductors.- Theoretical Analysis of Terahertz-Emission from
Asymmetric Double-Quantum Wells.- Carrier Transport in Quantum Well Lasers: A
Comparison between Different Heterostructures.- Small Signal Differential
Mobility of Planar Superlattice Miniband Transport and Negative Differential
Conductance.- General Conditions for Stability in Bistable Electrical Devices
with S- or Z-Shaped Current-Voltage Characteristics.- Quantum Hydrodynamics:
Derivation and Classical Limit.- A Transfer-Matrix Approach to
Photon-Assisted Tunneling through a Driven Double-Barrier Diode.- Dynamics of
Resonant Tunneling Domains in Superlattices: A Discrete Drift Model.-
Nonequilibrium Phenomena in Split Gate Quantum Waveguides.- Theory of
Delta-Wires.- Model and Transport in a Three-Layered Heterostructure with
Thin Quantum Wells in the Schottky Layer.- Dissipation Effects in Quantum
Tunneling.- A First Step for Semiconductor Quantum Device Modeling with
Incoherent Scattering.- Evaluation of the Mobility in a Si-SiO2 Inversion
Layer at T=0 K Using Greens Function Formalism.- Linearized Quantum
Transport Equations in Periodic Fields.- Photograph.- Participants.
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