Contributors |
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ix | |
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1 Introduction, background and contents |
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1 | (6) |
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2 Advances in interaction effects in the quasi one-dimensional electron gas |
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7 | (24) |
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7 | (2) |
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9 | (1) |
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3 Quantum transport properties of 1D devices |
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9 | (22) |
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25 | (1) |
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25 | (6) |
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3 Semiconductor nanodevices as a probe of strong electron correlations |
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31 | (36) |
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1 The failure of Fermi liquid theory |
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31 | (9) |
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2 Early results on Tomonaga-Luttinger liquid behaviour |
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40 | (12) |
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3 Beyond the linear Tomonaga-Luttinger liquid approximation |
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52 | (4) |
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4 Recent work on nonlinear effects |
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56 | (6) |
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5 Other work on ID interaction effects |
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62 | (2) |
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64 | (3) |
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64 | (3) |
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4 Thermoelectric properties of a quantum dot |
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67 | (34) |
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1 Landauer-Buttiker formalism of thermoelectricity |
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67 | (2) |
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69 | (2) |
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71 | (1) |
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4 Coulomb oscillations and thermopower |
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72 | (5) |
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5 The effect of degeneracy |
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77 | (1) |
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6 Power factor and figure of merit |
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78 | (3) |
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7 Violation of the Wiedemann-Franz law |
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81 | (2) |
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83 | (3) |
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9 Output power and efficiency |
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86 | (4) |
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90 | (3) |
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93 | (8) |
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95 | (6) |
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5 Single-electron sources |
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101 | (46) |
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1 Types of single-electron source |
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102 | (18) |
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2 Quantum current standard |
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120 | (9) |
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3 Electron quantum optics |
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129 | (11) |
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140 | (7) |
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141 | (1) |
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142 | (5) |
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6 Noise measurements in semiconductor nanodevices |
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147 | (94) |
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147 | (2) |
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2 The physics of quantum shot noise |
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149 | (16) |
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3 Noise measurement techniques |
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165 | (8) |
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4 Shot noise in semiconductor nanodevices |
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173 | (57) |
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230 | (11) |
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231 | (10) |
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7 Electrical and superconducting transport in topological insulator nanoribbons |
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241 | (24) |
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241 | (2) |
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2 Overview of electrical transport in Tl |
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243 | (4) |
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3 Electrical transport in Tl nanoribbons |
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247 | (6) |
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4 Superconducting transport in Tl nanoribbons |
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253 | (7) |
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260 | (5) |
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260 | (5) |
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265 | (30) |
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M. Fernando Gonzalez-Zalba |
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265 | (4) |
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269 | (6) |
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275 | (11) |
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286 | (9) |
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287 | (1) |
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287 | (8) |
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9 Electrical control of semiconductor quantum dot single photon sources |
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295 | (24) |
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1 Introduction and motivation |
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295 | (1) |
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2 Diode designs for single quantum dot photon sources |
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295 | (7) |
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3 Control of internal energy levels in quantum dots |
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302 | (5) |
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4 Hybrid approaches to control of quantum dots |
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307 | (5) |
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312 | (7) |
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313 | (6) |
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10 Semiconductor quantum dot solar cells |
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319 | (34) |
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319 | (3) |
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2 Drift-diffusion analysis of quantum efficiency in QD-IBSCs |
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322 | (9) |
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3 Improvement of carrier collection efficiency in QDSCs using field-damping layers |
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331 | (10) |
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4 FTIR spectroscopy of TSPA processes in QDSCs |
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341 | (7) |
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348 | (5) |
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349 | (1) |
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349 | (4) |
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11 Monolithic III--V quantum dot lasers on silicon |
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353 | (36) |
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353 | (2) |
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2 Advantages of quantum dot lasers on silicon |
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355 | (3) |
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3 Heteroepitaxial growth of lll-V on silicon |
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358 | (6) |
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4 Current status of lll-V quantum dot lasers on silicon |
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364 | (13) |
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5 Future directions of quantum dot lasers on SJ |
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377 | (1) |
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378 | (11) |
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380 | (1) |
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380 | (9) |
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12 Physics and applications of semiconductor nanowire lasers |
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389 | (50) |
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389 | (3) |
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392 | (12) |
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3 Nanowires as laser elements |
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404 | (12) |
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4 Contemporary topics in nanowire laser technology |
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416 | (4) |
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5 State of the art and outlook |
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420 | (19) |
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420 | (1) |
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421 | (18) |
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13 Nitride single photon sources |
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439 | (34) |
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439 | (4) |
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2 Basic principles of quantum dot fabrication |
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443 | (12) |
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3 Basic properties of quantum dots for single photon emission |
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455 | (5) |
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4 Strengths and weaknesses of nitride quantum dot single photon sources |
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460 | (4) |
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5 Single photon sources based on defects in nitrides |
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464 | (2) |
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466 | (7) |
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466 | (7) |
Index |
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473 | |