This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device rescarch and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration.
Fundamentals of Power Semiconductor Devices.- SiC Diode Main
Characteristics.- Interpretation, Testing, and Application of SiC MOSFET
Parameters.- Comparison of SiC and Si Device Characteristics.- Double-Pulse
Test.- SiC Device Testing and Failure Analysis Techniques.- High di/dt
Effects and Countermeasures - Turn-off Voltage Overshoot.- Effects and
Mitigation of High dv/dt - Crosstalk.- Impact and Countermeasures of High
dv/dt - Common Mode Current.- Effects and Countermeasures of Common Source
Inductance.- Drive Circuit.- Main Applications of SiC Devices.
Dr. Yuan Gao received his bachelor's and master's degrees from Xi 'an Jiaotong University in 2012 and 2015, respectively. He is currently the director of Application Test Center at Global Power Technology Co., Ltd., a member of the power electronics committee of China Electrotechnical Society (CES), the industry mentor of China Advanced Semiconductor Industry Innovation Alliance (CASA), and an external expert in power supply devices field of Tektronix Inc. He has published 9 academic papers and holds 4 patents. His monograph "Silicon Carbide Power Devices: Characteristics, Testing and Application Technology" has been included in the "14th Five-Year Plan" national key publications.
Yan Zhang is an associate professor, Ph.D. supervisor in Electronical Engineering at Xian Jiaotong University. He has led 2 National Natural Science Foundation Programs, 2 sub-projects of the National Key Research and Development Program, and over 20 collaborative projects with enterprises. He has co-authored more than 100 technical papers in peer-reviewed journals and conference papers and holds more than 10 China-issued patents. His research interests include SiC device application, topology, model and control of power electronic systems, high-efficiency high-density resonant power converters, and power electronics equipment reliability.
