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E-grāmata: SOI Lubistors - Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors [Wiley Online]

(Kansai University, Japan)
  • Formāts: 320 pages
  • Sērija : IEEE Press
  • Izdošanas datums: 29-Nov-2013
  • Izdevniecība: Wiley-IEEE Press
  • ISBN-10: 1118487915
  • ISBN-13: 9781118487914
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  • Wiley Online
  • Cena: 162,91 €*
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SOI Lubistors - Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors: Lateral, Unidirectional, Bipolar-type Insulated-gate TransistorsPalielināt
  • Formāts: 320 pages
  • Sērija : IEEE Press
  • Izdošanas datums: 29-Nov-2013
  • Izdevniecība: Wiley-IEEE Press
  • ISBN-10: 1118487915
  • ISBN-13: 9781118487914
Citas grāmatas par šo tēmu:
Wiley Online E-booksMore info about Wiley Online
Rokasgrāmatas mājas lapa: https://onlinelibrary.wiley.com/doi/book/10.1002/9781118487914
Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors

No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor.  The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines.  It is a key device in that it provides electrostatic protection to the LSIs.  The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit.

The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockleys theory, offering readers an opportunity to study the physics of pn junction.  Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver.  Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector.  The book also explores the photonic crystal physics and device applications of the Lubistor. 





Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device First book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies Approaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications

This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level.

Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors/

Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors/

Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor
Preface xiii
Acknowledgements xv
Introduction to an Exotic Device World xvii
Part One BRIEF REVIEW AND MODERN APPLICATIONS OF PN-JUNCTION DEVICES
1 Concept of an Ideal pn Junction
3(4)
References
4(3)
2 Understanding the Non-ideal pn Junction -- Theoretical Reconsideration
7(32)
2.1 Introduction
7(1)
2.2 Bulk pn-Junction Diode
8(16)
2.2.7 Assumptions
8(1)
2.2.2 Model A -- Low Doping Case
9(9)
2.2.3 Model B -- High Doping Case
18(6)
2.3 Bulk pn-Junction Diode -- Reverse Bias
24(8)
2.3.1 Model A -- Low Doping Case
24(1)
2.3.2 Model B -- High Doping Case
25(7)
2.4 The Insulated-Gate pn Junction of the SOI Lubistor -- Forward Bias
32(3)
2.4.1 The Positive Gate Voltage Condition
32(3)
2.4.2 The Negative Gate Voltage Condition
35(1)
2.5 The Insulated-Gate pn Junction of the SOI Lubistor -- Reverse Bias
35(4)
References
37(2)
3 Modern Applications of the pn Junction
39(4)
References
40(3)
Part Two PHYSICS AND MODELING OF SOI LUBISTORS -- THICK-FILM DEVICES
4 Proposal of the Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)
43(6)
4.1 Introduction
43(1)
4.2 Device Structure and Parameters
43(2)
4.3 Discussion of Current-Voltage Characteristics
45(2)
4.4 Summary
47(2)
References
47(2)
5 Experimental Consideration for Modeling of Lubistor Operation
49(14)
5.1 Introduction
49(1)
5.2 Experimental Apparatus
49(3)
5.3 Current--Voltage Characteristics of Lubistors
52(4)
5.4 Lubistor Potential Profiles and Features
56(1)
5.5 Discussion
57(4)
5.5.1 Simplified Analysis of Lubistor Operation
57(3)
5.5.2 On the Design of Lubistors
60(1)
5.6 Summary
61(2)
References
61(2)
6 Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations
63(12)
6.1 Introduction
63(1)
6.2 Device Structure and Measurement System
63(2)
6.3 Equivalent Circuit Models of an SOI Lubistor
65(7)
6.3.1 Device Simulation
65(3)
6.3.2 Equivalent Circuit Models
68(4)
6.4 Summary
72(3)
References
73(2)
7 Noise Characteristics and Modeling of Lubistor
75(14)
7.1 Introduction
75(1)
7.2 Experiments
75(2)
7.2.1 Device Structure
75(2)
7.2.2 Measurement System
77(66)
7.3 Results and Discussion
77(9)
7.3.1 I-V Characteristics of an SOI Lubistor and a Simple Analytical Model
77(4)
7.3.2 Noise Spectral Density of SOI Lubistors and Their Feature
81(2)
7.3.3 Advanced Analysis of Anode Noise Spectral Density
83(3)
7.4 Summary
86(3)
References
86(3)
8 Supplementary Study on Buried Oxide Characterization
89(16)
8.1 Introduction
89(1)
8.2 Physical Model for the Transition Layer
90(3)
8.3 Capacitance Simulation
93(2)
8.3.1 A Structure to Evaluate Capacitance
93(1)
8.3.2 Numerical Simulation Technique
94(1)
8.4 Device Fabrication
95(1)
8.5 Results and Discussion
96(5)
8.5.1 Electrode-to-Electrode Capacitance Dependence on Frequency
96(2)
8.5.2 Drain-to-Substrate Capacitance Dependence on Bias
98(3)
8.5.3 Electrode-to-Electrode Capacitance Dependence on Transition Layer Thickness
101(1)
8.6 Summary
101(4)
References
102(3)
Part Three PHYSICS AND MODELING OF SOI LUBISTORS -- THIN-FILM DEVICES
9 Negative Conductance Properties in Extremely Thin SOI Lubistors
105(6)
9.1 Introduction
105(1)
9.2 Device Fabrication and Measurements
105(1)
9.3 Results and Discussion
106(3)
9.4 Summary
109(2)
References
109(2)
10 Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors
111(16)
10.1 Introduction
111(1)
10.2 Experiments
111(3)
70.2.7 Anode Common Configuration
113(1)
10.2.2 Cathode Common Configuration
113(1)
10.3 Physical Models and Simulations
114(8)
10.3.1 Fundamental Models
114(4)
10.3.2 Theoretical Simulations
118(4)
10.3.3 Influences on Characteristics of Extremely Ultra-Thin SOI MOSFET Devices
122(1)
10.4 Summary
122(5)
Appendix 10A Intrinsic Carrier Concentration (niq) and the Fermi Level in 2DSS
122(3)
Appendix 10B Calculation of Electron and Hole Densities in 2DSS
125(1)
References
125(2)
11 Two-Dimensional Quantization Effect on Indirect Tunneling in SOI Lubistors with a Thin Silicon Layer
127(16)
11.1 Introduction
127(1)
11.2 Experimental Results
128(6)
11.2.1 Junction Current Dependence on Anode Voltage
128(4)
11.2.2 Junction Current Dependence on Gate Voltage
132(2)
11.3 Theoretical Discussion
134(6)
11.3.1 Qualitative Consideration of the Low-Dimensional Indirect Tunneling Process
134(1)
11.3.2 Theoretical Formulations of Tunneling Current and Discussion
134(6)
11.4 Summary
140(3)
Appendix 11A Wave Function Coupling Effect in the Lateral Two-Dimensional-System-to-Three-Dimensional-System (2D-to-3D) Tunneling Process
141(1)
References
141(2)
12 Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors
143(12)
12.1 Introduction
143(1)
12.2 Device Structures and Experimental Apparatus
144(1)
12.3 Results and Discussion
145(6)
12.3.1 I-V Characteristics under the Reverse-Biased Condition
145(6)
12.4 Summary
151(4)
Appendix 12A Derivation of Equations (12.6) and (12.9)
151(2)
References
153(2)
13 Supplementary Consideration of I-V Characteristics of Forward-Biased Ultra-Thin Lubistors
155(4)
13.1 Introduction
155(1)
13.2 Device Structures and Bias Configuration
155(1)
13.3 Results and Discussion
156(1)
13.4 Summary
157(2)
References
158(1)
14 Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET
159(8)
14.1 Introduction
159(1)
14.2 Device and Experiments
159(1)
14.3 Results and Discussion
159(3)
14.3.1 ID--VG and IG--VG Characteristics of the Ultra-Thin-Body DT-MOSFET
159(3)
14.3.2 Control of Bipolar Action by the MOS Gate
162(1)
14.4 Channel Polarity Dependence of Bipolar Action
162(4)
14.4.1 ID--VG and gm--VG Characteristics of the Ultra-Thin-Body DT-MOSFET
162(1)
14.4.2 Difference of Bipolar Operation between the n-Channel DT-MOS and the p-Channel DT-MOS
163(1)
14.4.3 Impact of Body Thickness on Bipolar Operation
164(2)
14.5 Summary
166(1)
References
166(1)
15 Supplementary Study on Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET
167(12)
15.1 Introduction
167(1)
15.2 Device Structures and Parameters
167(2)
15.3 Results and Discussion
169(4)
15.3.7 SOI MOSFET Mode and DT-MOSFET Mode
169(1)
15.3.2 Temperature Evolution of Transconductance (gm) Characteristics and Impact of Channel Length on gm Characteristics
170(3)
15.3.3 Impact of SOI Layer Thickness on gm Characteristics
173(1)
15.4 Summary
173(6)
References
174(5)
Part Four CIRCUIT APPLICATIONS
16 Subcircuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications
179(20)
16.1 Introduction
179(1)
16.2 Equivalent Circuit Models of SOI Lubistors and their Applications
180(3)
16.2.1 Device Structure and Device Simulation
180(3)
16.2.2 Equivalent Circuit Models
183(1)
16.3 ESD Protection Circuit
183(3)
16.4 Direct Current Characteristics of the ESD Protection Devices and Their SPICE Models
186(3)
16.5 ESD Event and Performance Evaluation of an ESD Protection Circuit
189(7)
16.6 Summary
196(3)
References
196(3)
17 A New Basic Element for Neural Logic Functions and Capability in Circuit Applications
199(14)
17.1 Introduction
199(1)
17.2 Device Structure, Model, and Proposal of a New Logic Element
199(7)
17.2.1 Device Structure and Fundamental Characteristics
199(2)
17.2.2 Device Model for the Lubistor
201(2)
17.2.3 Proposal of a New Logic Element
203(3)
17.3 Circuit Applications and Discussion
206(5)
17.3.1 Examples of Fundamental Elements for Circuit Applications
206(5)
17.3.2 On the Further Improvement of Functions of the Basic Logic Element
211(1)
17.4 Summary
211(2)
References
211(2)
18 Sub-1-V Voltage Reference Circuit Technology as an Analog Circuit Application
213(4)
18.1 Review of Bandgap Reference
213(1)
18.2 Challenging Study of Sub-1-V Voltage Reference
214(3)
References
215(2)
19 Possible Implementation of SOI Lubistors into Conventional Logic Circuits
217(6)
References
218(5)
Part Five OPTICAL DEVICE APPLICATIONS OF SOI LUBISTORS
20 Potentiality of Electro-Optic Modulator Based on the SOI Waveguide
223(14)
20.1 Introduction
223(1)
20.2 Characterization of the Quasi-One-Dimensional Photonic Crystal Waveguide
224(6)
20.3 Electro-Optic Modulator Based on the SOI Waveguide
230(3)
20.4 Summary
233(4)
References
234(3)
Part Six SOI LUBISTOR AS A TESTING TOOL
21 Principles of Parameter Extraction
237(4)
References
239(2)
22 Charge Pumping Technique
241(8)
22.1 Introduction
241(1)
22.2 Experimental and Simulation Details
241(2)
22.3 Results and Discussion
243(3)
22.4 Summary
246(3)
References
246(3)
Part Seven FUTURE PROSPECTS
23 Overview
249(12)
23.1 Introduction
249(1)
23.2 i-MOS Transistor
249(2)
23.3 Tunnel FET
251(3)
23.4 Feedback FET
254(2)
23.5 Potential of Offset-Gate Lubistor
256(2)
23.6 Si Fin LED with a Multi-quantum Well
258(1)
23.7 Future of the pn Junction
258(3)
References
259(2)
24 Feasibility of the Lubistor-Based Avalanche Phototransistor
261(12)
24.1 Introduction
261(1)
24.2 Theoretical Formulation of the Avalanche Phenomenon in Direct-Bandgap Semiconductors
261(3)
24.3 Theoretical Formulation of the Avalanche Phenomenon in Indirect-Bandgap Semiconductors
264(1)
24.4 Theoretical Consideration of the Avalanche Phenomenon in a One-Dimensional Wire pn Junction
265(4)
24.5 Summary
269(4)
References
269(4)
Part Eight SUMMARY OF PHYSICS FOR SEMICONDUCTOR DEVICES AND MATHEMATICS FOR DEVICE ANALYSES
25 Physics of Semiconductor Devices for Analysis
273(16)
25.1 Free Carrier Concentration and the Fermi Level in Semiconductors
273(2)
25.2 Impurity Doping in Semiconductors
275(1)
25.3 Drift and Diffusion of Carriers and Current Continuity in Semiconductors
275(1)
25.4 Stationary-State Schrodinger Equation to Analyze Quantum-Mechanical Effects in Semiconductors
276(1)
25.5 Time-dependent Schrodinger Equation to Analyze Dynamics in Semiconductors
277(1)
25.6 Quantum Size Effects in Nano-Scale Semiconductors
278(3)
25.7 Tunneling through Energy Barriers in Semiconductors
281(1)
25.8 Low-Dimensional Tunneling in Nano-Scale Semiconductors
282(2)
25.9 Photon Absorption and Electronic Transitions
284(5)
25.9.1 Fundamental Formulations
284(1)
25.9.2 Interband Transition -- Direct Bandgap
285(1)
25.9.3 Interband Transition -- Indirect Bandgap
286(1)
References
287(2)
26 Mathematics Applicable to the Analysis of Device Physics
289(4)
26.1 Linear Differential Equation
289(1)
26.2 Operator Method
290(1)
26.3 Klein--Gordon-Type Differential Equation
291(2)
References
292(1)
Bibliography 293(2)
Index 295
Professor Yasuhisa Omura, Department of Electric, Electronics and Information Engineering,?Kansai University, Osaka, Japan Professor Omura obtained his Ph D in Engineering from Kyushu University, Japan, in 1984, having been awarded Young Researcher Award (for the proposal of the Lubistor) from IEICE, Japan the previous year. Since inventing the Lubistor in 1982, he has published 12 papers and 10 conference papers characterizing its operation, its physics, and possible applications, in addition to almost 300 published articles and conference papers on other area of interest, including physics-based device modeling and photonic crystal design and propagation mode control.?He has been an IEEE Fellow since 2010.
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