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E-grāmata: Sub-Micron Semiconductor Devices: Design and Applications [Taylor & Francis e-book]

Edited by (Dr B R Ambedkar Nat. Ins. of Tech, India.), Edited by (Dr B R Ambedkar Nat. Ins. of Tech, India.), Edited by (Dr B R Ambedkar Nat. Ins. of Tech, India.)
  • Formāts: 392 pages, 47 Tables, black and white; 214 Line drawings, black and white; 13 Halftones, black and white; 227 Illustrations, black and white
  • Izdošanas datums: 11-May-2022
  • Izdevniecība: CRC Press
  • ISBN-13: 9781003126393
  • Taylor & Francis e-book
  • Cena: 235,68 €*
  • * this price gives unlimited concurrent access for unlimited time
  • Standarta cena: 336,68 €
  • Ietaupiet 30%
  • Formāts: 392 pages, 47 Tables, black and white; 214 Line drawings, black and white; 13 Halftones, black and white; 227 Illustrations, black and white
  • Izdošanas datums: 11-May-2022
  • Izdevniecība: CRC Press
  • ISBN-13: 9781003126393
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.

The book:















Covers novel semiconductor devices with submicron dimensions





Discusses comprehensive device optimization techniques





Examines conceptualization and modeling of semiconductor devices





Covers circuit and sensor-based application of the novel devices





Discusses novel materials for next-generation devices





This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Preface ix
Editors xiii
Contributors xv
Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor Devices
1(22)
Zeinab Ramezani
Arash Ahmadivand
Chapter 2 Recent Advancements in Growth and Stability of Phosphorene: Prospects for High-Performance Devices
23(16)
Sushil Kumar Pandey
Vivek Garg
Nezhueyotl Izquierdo
Amitesh Kumar
Chapter 3 Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide
39(10)
Prateek Kumar
Maneesha Gupta
Kunwar Singh
Ashok Kumar Gupta
Chapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects
49(16)
Afreen Khursheed
Kavita Khare
Chapter 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter
65(10)
Katyayani Bhardwaj
Aryan
R.K. Yadav
Chapter 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water
75(24)
Avik Sett
Monojit Mondal
Santanab Majumder
Tarun Kanti Bhattacharyya
Chapter 7 Vertical Tunnel FET Having Dual MOSCAP Geometry
99(16)
Vandana Devi Wangkheirakpam
Brinda Bhowmick
Puspa Devi Pukhrambam
Chapter 8 Leakage Current and Capacitance Reduction in CMOS Technology
115(16)
Ajay Somkuwar
Laxmi Singh
Chapter 9 Design of Gate-Ail-Around TFET with Gate-On-Source for Enhanced Analog Performance
131(16)
Navaneet Kumar Singh
Rajib Kar
Durbadal Mandal
Chapter 10 Solving Schrodinger's Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement Effects
147(18)
Amit Kumar
Chapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool
165(16)
Remya Jayachandran
Rama S. Komaragiri
K. J. Dhanaraj
Chapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices
181(12)
Chhaya Verma
Jeetendra Singh
Chapter 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications
193(18)
Suruchi Sharma
Rikmantra Basu
Baljit Kaur
Chapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors
211(24)
Monojit Mondal
Avik Sett
Dipak Kumar Goswami
Tarun Kanti Bhattacharyya
Chapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power Application
235(34)
Ashok Kumar Gupta
Ashish Raman
Naveen Kumar
Deep Shekhar
Prateek Kumar
Chapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFET
269(12)
Sagarika Choudhury
Krishna Lai Baishnab
Brinda Bhowmick
Koushik Guha
Chapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and Applications
281(18)
Juan M. Marmolejo-Tejada
Jaime Velasco-Medina
Andres Jaramillo-Botero
Chapter 18 Design and Analysis of Various Neural Preamplifier Circuits
299(10)
Swagata Devi
Koushik Guha
Krishna Lai Baishnab
Chapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor
309(10)
Prateek Kumar
Maneesha Gupta
Kunwar Singh
Ashok Kumar Gupta
Naveen Kumar
Chapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing Applications
319(16)
Aman Mahajan
Manreet Kaur Sohal
Chapter 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications
335(20)
Ramesh Rathinam
Adhithan Pon
Arkaprava Bhattacharyya
Chapter 22 Analytical Modeling of Reconfigurable Transistors
355(18)
Ranjith Rajan
Suja Krishnan Jagada
Rama S. Komaragiri
Chapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource Utilization
373(16)
Divya Sharma
Shivam Singh
Anurag Upadhyay
Sofyan A. Taya
Index 389
Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects.

Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc.

Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.