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E-grāmata: Wide Bandgap Semiconductors for Power Electronics - Materials, Devices, Applications: Materials, Devices, Applications 2 Volumes [Wiley Online]

Edited by (Infineon AG, Munich, Germany), Edited by (Kwansei Gakuin University, Hyogo, Japan), Edited by (University of Erlangen-Nuremberg, Germany)
  • Formāts: 736 pages
  • Izdošanas datums: 20-Oct-2021
  • Izdevniecība: Blackwell Verlag GmbH
  • ISBN-10: 3527824723
  • ISBN-13: 9783527824724
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  • Wiley Online
  • Cena: 336,11 €*
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Wide Bandgap Semiconductors for Power Electronics - Materials, Devices, Applications: Materials, Devices, Applications 2 VolumesPalielināt
  • Formāts: 736 pages
  • Izdošanas datums: 20-Oct-2021
  • Izdevniecība: Blackwell Verlag GmbH
  • ISBN-10: 3527824723
  • ISBN-13: 9783527824724
Citas grāmatas par šo tēmu:
Wiley Online E-booksMore info about Wiley Online
Rokasgrāmatas mājas lapa: https://onlinelibrary.wiley.com/doi/book/10.1002/9783527824724

A guide to the field of wide bandgap semiconductor technology 

Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage to the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.  

The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book:  

  • Presents a review of wide bandgap materials and recent developments 
  • Links the high potential of the wide bandgap semiconductor with the technologic implementation capabilities 
  • Offers a unique combination academic and industrial perspectives 
  • Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner 

Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials. 

Volume 1
Preface xiii
Part I Silicon Carbide (SiC)
1(352)
1 Dislocation Formation During Physical Vapor Transport Growth of 4H-SiC Crystals
3(30)
Noboru Ohtani
1.1 Introduction
3(2)
1.2 Formation of Basal Plane Dislocations During PVT Growth of 4H-SiC Crystals
5(13)
1.2.1 Plan-View X-ray Topography Observations of Growth Front
5(4)
1.2.2 Cross-Sectional X-ray Topography Observations of Growth Front
9(4)
1.2.3 Characteristic BPD Distribution in PVT-Grown 4H-SiC Crystals
13(2)
1.2.4 BPD Multiplication During PVT Growth
15(3)
1.3 Dislocation Formation During Initial Stage of PVT Growth of 4H-SiC Crystals
18(10)
1.3.1 Preparation of 4H-SiC Wafers with Beveled Interface Between Grown Crystal and Seed Crystal
18(1)
1.3.2 Determination of Grown-Crystal/Seed Interface by Raman Microscopy
19(3)
1.3.3 X-ray Topography Observations of Dislocation Structure at Grown-Crystal/Seed Interface
22(1)
1.3.4 Formation Mechanism of BPD Networks and Their Migration into Seed Crystal
23(5)
1.4 Conclusions
28(5)
References
30(3)
2 Industrial Perspectives of SiC Bulk Growth
33(14)
Adrian R. Powell
2.1 Introduction
33(1)
2.2 SiC Substrates for GaN LEDs
33(1)
2.3 SiC Substrates for Power SiC Devices
34(1)
2.4 SiC Substrates for High-Frequency Devices
35(1)
2.5 Cost Considerations for Commercial Production of SiC
35(1)
2.6 Raw Materials
36(1)
2.7 Reactor Hot Zone
37(2)
2.8 System Equipment
39(1)
2.9 Yield
39(2)
2.10 Turning Boules into Wafers
41(1)
2.11 Crystal Grind
41(1)
2.12 Wafer Slicing
42(2)
2.13 Wafer Polish
44(1)
2.14 Summary
44(3)
Acknowledgments
45(1)
References
45(2)
3 Homoepitaxial Growth of 4H-SiC on Vicinal Substrates
47(28)
Birgit Kallinger
3.1 Introduction
47(1)
3.2 Fundamentals of 4H-SiC Homoepitaxy for Power Electronic Devices
47(8)
3.2.1 4H-SiC Polytype Replication for Homoepitaxial Growth on Vicinal Substrates
48(4)
3.2.2 Homoepitaxial Growth by Chemical Vapor Deposition (CVD) Process
52(1)
3.2.3 Doping in Homoepitaxial Growth
53(2)
3.3 Extended Defects in Homoepitaxial Layers
55(7)
3.3.1 Classification of Extended Defects According to Glide Systems in 4H-SiC
56(1)
3.3.2 Dislocation Reactions During Epitaxial Growth
57(2)
3.3.3 Characterization Methods for Extended Defects in 4H-SiC Epilayers
59(3)
3.4 Point Defects and Carrier Lifetime in Epilayers
62(7)
3.4.1 Classification and General Properties of Point Defects in 4H-SiC
62(2)
3.4.2 Basics on Recombination Carrier Lifetime in 4H-SiC
64(1)
3.4.3 Carrier Lifetime-Affecting Point Defects
65(3)
3.4.4 Carrier Lifetime Measurement in Epiwafers and Devices
68(1)
3.5 Conclusion
69(6)
Acknowledgments
70(1)
References
70(5)
4 Industrial Perspective of SiC Epitaxy
75(18)
Albert A. Burk Jr.
Michael J. O'Loughlin
Denis Tsvetkov
Scott Ustin
4.1 Introduction
75(1)
4.2 Background
76(1)
4.3 The Basics of SiC Epitaxy
76(2)
4.4 SiC Epi Historical Origins
78(2)
4.5 Planetary Multi-wafer Epitaxial Reactor Design Considerations
80(2)
4.5.1 Rapidly Rotating Reactors
81(1)
4.5.2 Horizontal Hot-Wall Reactors
82(1)
4.6 Latest High-Throughput Epitaxial Reactor Status
82(4)
4.7 Benefits and Challenges for Increasing Growth Rate in all Reactors
86(1)
4.8 Increasing Wafer Diameters, Device Processing Considerations, and Projections
86(3)
4.9 Summary
89(4)
Acknowledgment
90(1)
References
90(3)
5 Status of 3C-SiC Growth and Device Technology
93(44)
Peter Wellmann
Michael Scholer
Philipp Schuh
Mike Jennings
Fan Li
Roberta Nipoti
Andrea Severino
Ruggero Anzalone
Fabrizio Roccaforte
Massimo Zimbone
Francesco La Via
5.1 Introduction, Motivation, Short Review on 3C-SiC
93(2)
5.2 Nucleation and Epitaxial Growth of 3C-SC on Si
95(8)
5.2.1 Growth Process
95(3)
5.2.2 Defects
98(4)
5.2.3 Stress
102(1)
5.3 Bulk Growth of 3C-SiC
103(14)
5.3.1 Sublimation Growth of (111)-oriented 3C-SiC on Hexagonal SiC Substrates
104(1)
5.3.2 Sublimation Growth of 3C-SiC on 3C-SiC CVD Seeding Layers
105(5)
5.3.3 Continuous Fast CVD Growth of 3C-SiC on 3C-SiC CVD Seeding Layers
110(7)
5.4 Processing and Testing of 3C-SiC Based Power Electronic Devices
117(10)
5.4.1 Prospects for 3C-SiC Power Electronic Devices
117(1)
5.4.2 3C-SiC Device Processing
117(1)
5.4.3 MOS Processing
118(2)
5.4.4 3C-SiC/SiO2 Interface Passivation
120(1)
5.4.5 Surface Morphology Effects on 3C-SiC Thermal Oxidation
121(1)
5.4.6 Thermal Oxidation Temperature Effects for 3C-SiC
122(1)
5.4.7 Ohmic Contact Metalization
123(3)
5.4.8 N-type 3C-SiC Ohmic Contacts
126(1)
5.4.9 Ion Implantation
126(1)
5.5 Summary
127(10)
Acknowledgements
127(1)
References
127(10)
6 Intrinsic and Extrinsic Electrically Active Point Defects in SiC
137(32)
Ulrike Grossner
Joachim K. Grillenberger
Judith Woerle
Marianne E. Bathen
Johanna Muting
6.1 Characterization of Electrically Active Defects
141(5)
6.1.1 Deep Level Transient Spectroscopy
141(2)
6.1.1.1 Profile Measurements
143(1)
6.1.1.2 Poole--Frenkel Effect
143(1)
6.1.1.3 Laplace DLTS
143(1)
6.1.2 Low-energy Muon Spin Rotation Spectroscopy
144(1)
6.1.2.1 μSR and Semiconductors
144(1)
6.1.3 Density Functional Theory
145(1)
6.2 Intrinsic Electrically Active Defects in SiC
146(7)
6.2.1 The Carbon Vacancy, Vc
147(5)
6.2.2 The Silicon Vacancy, VSi
152(1)
6.3 Transition Metal and Other Impurity Levels in SiC
153(6)
6.4 Summary
159(10)
References
163(6)
7 Dislocations in 4H-SiC Substrates and Epilayers
169(30)
Balaji Raghothamachar
Michael Dudley
7.1 Introduction
169(1)
7.2 Dislocations in Bulk 4H-SiC
170(14)
7.2.1 Micropipes (MPs) and Closed-core Threading Screw Dislocations (TSDs)
170(1)
7.2.2 Basal Plane Dislocations (BPDs)
171(1)
7.2.3 Threading Edge Dislocations (TEDs)
171(1)
7.2.4 Interaction between BPDs and TEDs
171(1)
7.2.4.1 Hopping Frank-Read Source of BPDs
171(2)
7.2.5 Threading Mixed Dislocations (TMDs) in 4H-SiC
173(1)
7.2.5.1 Reaction Between Threading Dislocations with Burgers Vectors of -c + a and c + a Wherein the Opposite c-Components Annihilate Leaving Behind the Two a-Components
174(1)
7.2.5.2 Reaction Between Threading Dislocations with Burgers Vectors of -c and c + a Leaving Behind the a-Component
175(1)
7.2.5.3 Reaction Between Opposite-sign Threading Screw Dislocations with Burgers Vectors c and -c
175(1)
7.2.5.4 Nucleation of Opposite Pair of c + a Dislocations and Their Deflection
175(2)
7.2.5.5 Deflection of Threading c + a, c and Creation of Stacking Faults
177(3)
7.2.6 Prismatic Slip during PVT growth 4H-SiC Boules
180(1)
7.2.7 Relationship Between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers
181(1)
7.2.8 Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals
181(3)
7.3 Dislocations in Homoepitaxial 4H-SiC
184(8)
7.3.1 Conversion of BPDs into TEDs
184(1)
7.3.2 Susceptibility of Basal Plane Dislocations to the Recombination-Enhanced Dislocation Glide in 4H Silicon Carbide
184(4)
7.3.3 Nucleation of TEDs, BPDs, and TSDs at Substrate Surface Damage
188(3)
7.3.4 Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epitaxial Layers
191(1)
7.3.5 V- and Y-shaped Frank-type Stacking Faults
192(1)
7.4 Summary
192(7)
Acknowledgments
195(1)
References
195(4)
8 Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation
199(26)
Binh Duong Nguyen
Stefan Sandfeld
8.1 Introduction
199(1)
8.2 General Modeling and Simulation Approaches
200(1)
8.3 Continuum Dislocation Modeling Approaches
201(5)
8.3.1 Alexander--Haasen Model
201(1)
8.3.2 Continuum Dislocation Dynamics Models
202(1)
8.3.2.1 The Simplest Model: Straight Parallel Dislocation with the Same Line Direction
203(1)
8.3.2.2 The "Groma" Model: Straight Parallel Dislocations with Two Line Directions
203(1)
8.3.2.3 The Kroner--Nye Model for Geometrically Necessary Dislocations
204(1)
8.3.2.4 Three-dimensional Continuum Dislocation Dynamics (CDD)
204(2)
8.4 Example 1: Comparison of the Alexander--Haasen and the Groma Model
206(5)
8.4.1 Governing Equations
206(1)
8.4.2 Physical System and Model Setup
206(3)
8.4.3 Results and Discussion
209(2)
8.5 Example 2: Dislocation Flow Between Veins
211(8)
8.5.1 A Brief Introduction to Dislocation Patterning and the Similitude Principle
211(2)
8.5.2 Physical System and Model Setup
213(1)
8.5.3 Geometry and Initial Values
214(1)
8.5.4 Results and Discussion
215(4)
8.6 Summary and Conclusion
219(6)
References
220(5)
9 Gate Dielectrics for 4H-SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H-SiC/SiO2 Interface
225(24)
Gregor Pobegen
Thomas Aichinger
9.1 Introduction
225(1)
9.2 Electrical Impact of Traps on MOSFET Characteristics
225(12)
9.2.1 Sub threshold Sweep Hysteresis
226(5)
9.2.2 Preconditioning Measurement
231(2)
9.2.3 Bias Temperature Instability
233(2)
9.2.4 Reduced Channel Electron Mobility
235(2)
9.3 Microscopic Nature of Electrically Active Traps Near the Interface
237(5)
9.3.1 The Pbc Defect and the Subthreshold Sweep Hysteresis
237(1)
9.3.2 The Intrinsic Electron Trap and the Reduced MOSFET Mobility
238(2)
9.3.3 Point Defect Candidates for BTI
240(2)
9.4 Conclusions and Outlook
242(7)
References
243(6)
10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal-Semiconductor Interface
249(22)
Michael Krieger
Heiko B. Weber
10.1 Introduction
249(1)
10.2 Epitaxial Graphene as a Metal
249(1)
10.3 Fabrication and Structuring of Epitaxial Graphene
250(3)
10.3.1 Epitaxial Growth by Thermal Decomposition
250(1)
10.3.2 Intercalation
251(1)
10.3.3 Structuring of Epitaxial Graphene Layers and Partial Intercalation
252(1)
10.4 Epitaxial Graphene as Tailorable Metal/Semiconductor Contact
253(4)
10.4.1 Ohmic Contacts
254(2)
10.4.2 Schottky Contacts
256(1)
10.5 Monolithic Epitaxial Graphene Electronic Devices and Circuits
257(3)
10.5.1 Discrete Epitaxial Graphene Devices
257(2)
10.5.2 Monolithic Integrated Circuits
259(1)
10.6 Novel Experiments on Light-Matter Interaction Enabled by Epitaxial Graphene
260(4)
10.6.1 High-Frequency Operation and Ultimate Speed Limits of Schottky Diodes
260(3)
10.6.2 Transparent Electrical Access to SiC for Novel Quantum Technology Applications
263(1)
10.7 Conclusion
264(7)
Acknowledgments
265(1)
References
265(6)
11 Device Processing Chain and Processing SiC in a Foundry Environment
271(48)
Arash Salemi
Minseok Kang
Woongje Sung
Anant K. Agarwal
11.1 Introduction
271(1)
11.2 DMOSFET Structure
271(2)
11.3 Process Integration of SiC MOSFETs
273(30)
11.3.1 Lithography
283(1)
11.3.2 SiC Etching
283(7)
11.3.3 Ion Implantation and Activation Annealing
290(3)
11.3.4 Oxidation and Oxide
293(3)
11.3.5 Post Oxidation Annealing
296(2)
11.3.6 Poly-Si Deposition
298(2)
11.3.7 Backside Thinning and Waffle Substrates
300(1)
11.3.8 Ohmic Contacts and Metallization
301(1)
11.3.9 Polyimide Deposition
302(1)
11.4 Commercial Foundries for Si and SiC Devices
303(3)
11.4.1 Cost Model
303(1)
11.4.1.1 Cost Roadmap for WBG Devices
303(2)
11.4.2 New Equipment and Processing Requirements
305(1)
11.5 Dedicated Foundries vs. Commercial Foundries
306(13)
References
307(12)
12 Unipolar Device in SiC: Diodes and MOSFETs
319(34)
Sei-Hyung Ryu
12.1 Introduction
319(1)
12.2 Unipolar Diodes -- 4H-SiC JBS Diodes
320(9)
12.2.1 Optimization of 4H-SiC JBS Diodes
323(1)
12.2.1.1 Injection from the p+ Regions for Surge Operation
324(2)
12.2.1.2 Trench JBS Diodes
326(1)
12.2.1.3 Use of Low Work Function Metal for Anode Metal
327(2)
12.3 Unipolar Switches: Power MOSFETs
329(17)
12.3.1 4H-SiC Power MOSFET Structures
332(1)
12.3.1.1 DMOSFETs
332(5)
12.3.1.2 Trench MOSFETs
337(5)
12.3.2 Advanced Power MOSFET Structures in 4H-SiC
342(1)
12.3.2.1 Superjunction MOSFETs in 4H-SiC
342(3)
12.3.2.2 Integrated JBS Diodes in 4H-SiC Power MOSFETs
345(1)
12.4 Summary
346(7)
References
348(5)
Volume 2
13 Ultra-High-Voltage SiC Power Device
353(34)
Yoshiyuki Yonezawa
Koji Nakayama
14 SiC Reliability Aspects
387(46)
Josef Lutz
Thomas Busier
15 Industrial Systems Using SiC Power Devices
433(34)
Nando Kaminski
16 Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications
467(36)
Kimimori Hamada
Keiji Toda
Hiromichi Nakamura
Shigeharu Yamagami
Kazuhiro Tsuruta
17 Point Defects in Silicon Carbide for Quantum Technology
503(26)
Andras Csore
Adam Gali
Part II Gallium Nitride (GaN), Diamond, and Ga2O3
529(152)
18 Ammonothermal and HVPE Bulk Growth of GaN
531(24)
Robert Kucharski
Tomasz Sochacki
Boleslaw Lucznik
Mikolaj Amilusik
Karolina Grabianska
Malgorzata Iwinska
Michal Bockowski
19 GaN on Si: Epitaxy and Devices
555(28)
Hidekazu Umeda
20 Growth of Single Crystal Diamond Wafers for Future Device Applications
583(50)
Matthias Schreck
21 Diamond Wafer Technology, Epitaxial Growth, and Device Processing
633(26)
Hideaki Yamada
Hiromitsu Kato
Shinya Ohmagari
Hitoshi Umezawa
22 Gallium Oxide: Material Properties and Devices
659(22)
Masataka Higashiwaki
Index 681
Peter Wellmann, PhD is Professor at the University of Erlangen-Nuremberg, Department of Materials for Electronics and Energy Technology, Germany.

Noboru Ohtani, PhD, is Professor at the School of Engineering and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan.

Roland Rupp, PhD, was Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications.
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