Jayakrishnan M. Purushothama, Etienne Perret, Arnaud Vena
(Izdošanas datums: 08-Mar-2022, EPUB+DRM, Izdevniecība: ISTE Ltd and John Wiley & Sons Inc, ISBN-13: 9781119902812)
This book presents the applications of non-volatile CBRAM/MIM switching technology for electronically reconfigurable passive RF and microwave devices, together with theory and methods for application in rewritable chipless RFID tags. Conductive Bridg...Lasīt vairāk
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories,...Lasīt vairāk
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories,...Lasīt vairāk
Jayakrishnan M. Purushothama, Etienne Perret, Arnaud Vena
(Izdošanas datums: 01-Mar-2022, PDF+DRM, Izdevniecība: ISTE Ltd and John Wiley & Sons Inc, ISBN-13: 9781119902805)
This book presents the applications of non-volatile CBRAM/MIM switching technology for electronically reconfigurable passive RF and microwave devices, together with theory and methods for application in rewritable chipless RFID tags. Conductive Bridg...Lasīt vairāk
(Izdošanas datums: 23-Mar-2021, PDF+DRM, Izdevniecība: Institution of Engineering and Technology, ISBN-13: 9781839530821)
The transition towards exascale computing has resulted in major transformations in computing paradigms. The need to analyze and respond to such large amounts of data sets has led to the adoption of machine learning (ML) and deep learning (DL) methods...Lasīt vairāk
(Izdošanas datums: 23-Mar-2021, EPUB+DRM, Izdevniecība: Institution of Engineering and Technology, ISBN-13: 9781839530821)
The transition towards exascale computing has resulted in major transformations in computing paradigms. The need to analyze and respond to such large amounts of data sets has led to the adoption of machine learning (ML) and deep learning (DL) methods...Lasīt vairāk
(Izdošanas datums: 15-Dec-2020, PDF+DRM, Izdevniecība: John Wiley & Sons Inc, ISBN-13: 9781119562221)
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects nece...Lasīt vairāk
(Izdošanas datums: 12-Dec-2020, EPUB+DRM, Izdevniecība: John Wiley & Sons Inc, ISBN-13: 9781119562283)
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects nece...Lasīt vairāk
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the curren...Lasīt vairāk
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the curren...Lasīt vairāk
In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving...Lasīt vairāk
In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving...Lasīt vairāk
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of...Lasīt vairāk
This thesis presents the first direct observations of the 3D-shape, size and electrical properties of nanoscale filaments, made possible by a new Scanning Probe Microscopy-based tomography technique referred to as scalpel SPM. Using this innovative t...Lasīt vairāk
Charles Ching-hsiang Hsu, Yuan-tai Lin, Ching-sung Yang
Sērija : International Series On Advances In Solid State Electronics And Technology
(Izdošanas datums: 18-Mar-2014, PDF+DRM, Izdevniecība: World Scientific Publishing Co Pte Ltd, ISBN-13: 9789814460927)
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like...Lasīt vairāk
Charles Ching-hsiang Hsu, Yuan-tai Lin, Ching-sung Yang
Sērija : International Series On Advances In Solid State Electronics And Technology
(Izdošanas datums: 18-Mar-2014, EPUB+DRM, Izdevniecība: World Scientific Publishing Co Pte Ltd, ISBN-13: 9789814460927)
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like...Lasīt vairāk
