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Nanoscale Redox Reaction at Metal/Oxide Interface: A Case Study on Schottky Contact and ReRAM 2020 ed. [Mīkstie vāki]

  • Formāts: Paperback / softback, 89 pages, height x width: 235x155 mm, weight: 454 g, 51 Illustrations, color; 12 Illustrations, black and white; XI, 89 p. 63 illus., 51 illus. in color., 1 Paperback / softback
  • Sērija : NIMS Monographs
  • Izdošanas datums: 22-May-2020
  • Izdevniecība: Springer Verlag, Japan
  • ISBN-10: 4431548491
  • ISBN-13: 9784431548492
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  • Formāts: Paperback / softback, 89 pages, height x width: 235x155 mm, weight: 454 g, 51 Illustrations, color; 12 Illustrations, black and white; XI, 89 p. 63 illus., 51 illus. in color., 1 Paperback / softback
  • Sērija : NIMS Monographs
  • Izdošanas datums: 22-May-2020
  • Izdevniecība: Springer Verlag, Japan
  • ISBN-10: 4431548491
  • ISBN-13: 9784431548492
Citas grāmatas par šo tēmu:

Oxide materials are good candidates to replace Si devices which are facing performance limits since these materials display unique properties, either due to their composition design and/or doping technique.

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. Material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Oxide materials should support the development of future functional devices with High-k, ferroelectric, magnetic and optical properties. Optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure are also explained.



This book examines the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR).
General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.
Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. 

His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.