Atjaunināt sīkdatņu piekrišanu

E-grāmata: Nanoscale Redox Reaction at Metal/Oxide Interface: A Case Study on Schottky Contact and ReRAM

  • Formāts: PDF+DRM
  • Sērija : NIMS Monographs
  • Izdošanas datums: 21-May-2020
  • Izdevniecība: Springer Verlag, Japan
  • Valoda: eng
  • ISBN-13: 9784431548508
  • Formāts - PDF+DRM
  • Cena: 53,52 €*
  • * ši ir gala cena, t.i., netiek piemērotas nekādas papildus atlaides
  • Ielikt grozā
  • Pievienot vēlmju sarakstam
  • Šī e-grāmata paredzēta tikai personīgai lietošanai. E-grāmatas nav iespējams atgriezt un nauda par iegādātajām e-grāmatām netiek atmaksāta.
  • Formāts: PDF+DRM
  • Sērija : NIMS Monographs
  • Izdošanas datums: 21-May-2020
  • Izdevniecība: Springer Verlag, Japan
  • Valoda: eng
  • ISBN-13: 9784431548508

DRM restrictions

  • Kopēšana (kopēt/ievietot):

    nav atļauts

  • Drukāšana:

    nav atļauts

  • Lietošana:

    Digitālo tiesību pārvaldība (Digital Rights Management (DRM))
    Izdevējs ir piegādājis šo grāmatu šifrētā veidā, kas nozīmē, ka jums ir jāinstalē bezmaksas programmatūra, lai to atbloķētu un lasītu. Lai lasītu šo e-grāmatu, jums ir jāizveido Adobe ID. Vairāk informācijas šeit. E-grāmatu var lasīt un lejupielādēt līdz 6 ierīcēm (vienam lietotājam ar vienu un to pašu Adobe ID).

    Nepieciešamā programmatūra
    Lai lasītu šo e-grāmatu mobilajā ierīcē (tālrunī vai planšetdatorā), jums būs jāinstalē šī bezmaksas lietotne: PocketBook Reader (iOS / Android)

    Lai lejupielādētu un lasītu šo e-grāmatu datorā vai Mac datorā, jums ir nepieciešamid Adobe Digital Editions (šī ir bezmaksas lietotne, kas īpaši izstrādāta e-grāmatām. Tā nav tas pats, kas Adobe Reader, kas, iespējams, jau ir jūsu datorā.)

    Jūs nevarat lasīt šo e-grāmatu, izmantojot Amazon Kindle.

Oxide materials are good candidates to replace Si devices which are facing performance limits since these materials display unique properties, either due to their composition design and/or doping technique.

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. Material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Oxide materials should support the development of future functional devices with High-k, ferroelectric, magnetic and optical properties. Optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure are also explained.



This book examines the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR).
General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.
Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. 

His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.