Foreword |
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ix | |
Preface |
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xi | |
Authors |
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xvii | |
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Chapter 1 Forming Directed Fluxes of Low-Temperature Plasma with High-Voltage Gas Discharge outside the Electrode Gap |
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1 | (22) |
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1.1 Overview of Devices Used for Generating Low-Temperature High-Voltage Gas-Discharge Plasma |
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1 | (4) |
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1.2 Features of Low-Temperature Off-Electrode Plasma Generated by High-Voltage Gas Discharge |
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5 | (5) |
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1.3 Design Changes to the High-Voltage Gas-Discharge Device |
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10 | (6) |
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1.4 New Devices for Generating Directed Fluxes of Low-Temperature Off-Electrode Plasma |
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16 | (5) |
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1.4.1 Multibeam Gas-Discharge Plasma Generator |
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17 | (2) |
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1.4.2 Gas-Discharge Plasma Focuser |
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19 | (2) |
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21 | (2) |
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Chapter 2 Methods for Quickly Measuring Surface Cleanliness |
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23 | (40) |
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2.1 Overview of Methods for Quickly Measuring Surface Cleanliness |
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24 | (5) |
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2.1.1 Method of Frustrated Multiple Internal Reflection Spectroscopy |
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24 | (1) |
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2.1.2 Method of Measuring the Volta Potential |
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25 | (1) |
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2.1.3 Methods for Evaluating Cleaning Efficiency Based on Wettability of the Substrate Surface |
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25 | (2) |
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27 | (2) |
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2.2 Design Changes to the Tribometer |
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29 | (7) |
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2.3 Operating Regimes and Parameters of the Tribometer |
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36 | (5) |
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2.4 Determining the Evaluation Criterion of a Technologically Clean Surface |
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41 | (3) |
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2.5 Tribometric Effect of the Substrate-Probe on the Structure of the Test Surface |
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44 | (2) |
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2.6 Measuring Surface Cleanliness with the Tribometric Method |
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46 | (1) |
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2.7 A Cleanliness Analyzer Based on Analysis of Drop Behavior |
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46 | (2) |
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2.8 Evaluating the Cleanliness of a Substrate from the Dynamic State of a Liquid Drop Deposited on Its Surface |
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48 | (7) |
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2.8.1 Description of the Experimental Method |
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49 | (1) |
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2.8.1.1 Sample Preparation |
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49 | (1) |
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2.8.2 Description of the Experimental Procedure |
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49 | (6) |
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2.9 Specifications of the Micro- and Nanoroughness Analyzer |
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55 | (3) |
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2.10 Design Changes to the Micro- and Nanoroughness Analyzer |
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58 | (4) |
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2.10.1 Requirements for the Automatic Dispenser |
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59 | (1) |
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2.10.2 Compatibility of the Pump's Control Module and the Analyzer's Software |
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60 | (1) |
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2.10.3 Overview of the Operation of the Modified Analyzer |
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61 | (1) |
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62 | (1) |
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Chapter 3 Increasing the Degree of Surface Cleanliness with Low-Temperature Off-Electrode Plasma |
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63 | (28) |
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3.1 Overview of Methods for Surface Cleaning |
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63 | (3) |
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64 | (1) |
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65 | (1) |
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3.1.3 Low-Temperature Plasma Cleaning |
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65 | (1) |
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3.2 Formation Mechanisms of Surface Properties |
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66 | (3) |
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3.3 Molecular Structure Analysis of the Organic Contaminant |
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69 | (3) |
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3.4 Preparing Initial Samples with a Given Degree of Contamination |
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72 | (3) |
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3.5 Analysis of Plasma Particles Impinging on the Surface Being Treated |
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75 | (4) |
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3.6 Mechanism of Surface Cleaning with Directed Fluxes of Low-Temperature Off-Electrode Plasma |
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79 | (5) |
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79 | (2) |
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3.6.2 Cleaning Model: Primary Expressions |
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81 | (3) |
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3.7 Experimental Investigation into the Relationship between the Degree of Surface Cleanliness and Physical Plasma Parameters |
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84 | (4) |
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3.8 Procedure for Final Surface Cleaning with Off-Electrode Plasma |
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88 | (1) |
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89 | (2) |
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Chapter 4 Adhesion in Metal-Dielectric Structures after Surface Bombardment with an Ion-Electron Flux |
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91 | (18) |
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4.1 Adhesion-Enhancing Mechanism |
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91 | (5) |
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4.2 Adhesion Model: Primary Expressions |
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96 | (5) |
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4.3 Experimental Investigation into the Effect of Ion-Electron Bombardment Parameters on Adhesion |
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101 | (5) |
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4.4 Depositing Highly Adhesive Masks |
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106 | (1) |
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107 | (2) |
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Chapter 5 Etching the Surface Microreliefs of Optical Materials in Off-Electrode Plasma |
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109 | (46) |
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5.1 Preparing Samples for an Experiment in Etching the Surface Microreliefs of Optical Materials in Off-Electrode Plasma |
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110 | (1) |
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5.2 Mechanisms of Plasma-Chemical and Ion-Chemical Surface Etching |
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111 | (4) |
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5.3 Etching Model: Primary Expressions; Algorithm and Software for Calculating the Etch Rate |
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115 | (9) |
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5.4 Experimental Investigation into the Relationship between the Etch Rate and Physical Plasma Parameters |
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124 | (8) |
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5.5 Relationship between the Etch Rate and Substrate Temperature |
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132 | (8) |
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5.5.1 Method for Determining the Temperature of a Surface at a Site Where a Low-Temperature Plasma Flux Is Incident on the Surface |
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133 | (5) |
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5.5.2 Experimental Investigation into the Relationship between the Etch Rate and Substrate Temperature |
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138 | (2) |
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5.6 Effect of Bulk Modification of Polymers in a Directed Low-Temperature Plasma Flux |
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140 | (6) |
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5.7 Etching Quality of Optical Materials |
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146 | (7) |
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5.8 Fabricating Microreliefs on the Surfaces of Optical Materials through Plasma-Chemical Etching in Off-Electrode Plasma |
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153 | (1) |
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5.9 Fabricating Microreliefs on the Surfaces of Optical Materials through Ion-Chemical Etching in Off-Electrode Plasma |
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154 | (1) |
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154 | (1) |
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Chapter 6 Generating a Catalytic Mask for the Microrelief of an Optical Element When an Al-Si Structure Is Irradiated by High-Voltage Gas-Discharge Particles |
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155 | (16) |
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6.1 Entrainment of Silicon Atoms by Vacancies Formed in an Aluminum Melt When Its Surface Is Exposed to High-Voltage Gas-Discharge Particles |
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156 | (3) |
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6.2 Analytical Description of Silicon Dissolution in an Aluminum Melt |
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159 | (7) |
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6.2.1 Conservative Difference Scheme for Diffusion Equations |
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163 | (1) |
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6.2.2 Difference Solution to the Mixed Problem |
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164 | (1) |
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6.2.3 Analysis of Numerical Results |
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165 | (1) |
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6.3 Analysis of Experimental Data |
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166 | (2) |
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6.4 Fabricating a Microrelief Based on a Catalytic Mask Formed in Off-Electrode Plasma |
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168 | (1) |
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169 | (2) |
Conclusion |
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171 | (2) |
Appendix A Statistical Analysis of Experimental Results |
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173 | (18) |
References |
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191 | (18) |
Index |
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209 | |