Author Biography |
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xi | |
Preface |
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xiii | |
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1 Introduction to the Basic Concepts |
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1 | (6) |
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1 | (1) |
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1.2 Ohm's Law and Resistivity |
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1 | (4) |
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1.3 Conductor, Insulator, and Semiconductor |
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5 | (2) |
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5 | (2) |
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2 Brief Introduction of Theories |
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7 | (10) |
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2.1 The Birth of Quantum Mechanics |
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7 | (4) |
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11 | (6) |
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15 | (2) |
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3 Early Radio Communication |
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17 | (6) |
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17 | (2) |
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19 | (4) |
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22 | (1) |
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4 Basic Knowledge of Electric Circuits (Circuits) |
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23 | (10) |
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4.1 Electric Circuits and the Components |
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23 | (3) |
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26 | (2) |
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28 | (2) |
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30 | (3) |
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5 Further Discussion of Semiconductors and Diodes |
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33 | (14) |
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5.1 Semiconductor Energy Band |
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33 | (3) |
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36 | (6) |
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42 | (5) |
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46 | (1) |
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6 Transistor and Integrated Circuit |
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47 | (14) |
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47 | (2) |
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6.2 Junction Field Effect Transistor |
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49 | (3) |
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6.3 Metal-Semiconductor Field Effect Transistor |
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52 | (3) |
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6.4 Metal-Insulator-Semiconductor Field Effect Transistor |
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55 | (6) |
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60 | (1) |
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7 The Development History of Semiconductor Industry |
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61 | (16) |
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7.1 The Instruction of Semiconductor Products and Structures |
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61 | (2) |
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7.2 A Brief History of the Semiconductor Industry |
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63 | (2) |
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7.3 Changes in the Size of Transistors and Silicon Wafers |
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65 | (2) |
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67 | (4) |
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71 | (6) |
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75 | (2) |
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8 Semiconductor Photonic Devices |
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77 | (20) |
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8.1 Light-Emitting Devices and Light-Emitting Principles |
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77 | (5) |
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8.2 Light-Emitting Diode (LED) |
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82 | (6) |
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8.3 Semiconductor Diode Laser |
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88 | (9) |
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89 | (2) |
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8.3.2 Reflection and Refraction of Light |
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91 | (2) |
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8.3.3 Heterojunction Materials |
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93 | (1) |
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8.3.4 Population Inversion and Threshold Current Density |
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94 | (2) |
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96 | (1) |
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9 Semiconductor Light Detection and Photocell |
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97 | (12) |
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9.1 Digital Camera and CCD |
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97 | (3) |
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100 | (1) |
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101 | (4) |
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105 | (4) |
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106 | (3) |
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10 Manufacture of Silicon Wafer |
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109 | (16) |
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10.1 From Quartzite Ore to Polysilicon |
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110 | (3) |
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113 | (2) |
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115 | (1) |
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10.4 Polishing and Slicing |
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116 | (9) |
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123 | (2) |
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11 Basic Knowledges of Process |
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125 | (10) |
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11.1 The Structure of Integrated Circuit (IC) |
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125 | (3) |
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11.2 Resolution of Optical System |
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128 | (3) |
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11.3 Why Plasma Used in the Process |
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131 | (4) |
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133 | (2) |
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12 Photolithography (Lithography) |
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135 | (26) |
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12.1 The Steps of Lithography Process |
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135 | (17) |
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135 | (1) |
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136 | (2) |
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12.1.3 Photoresist Coating |
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138 | (3) |
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141 | (1) |
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12.1.5 Alignment and Exposure |
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141 | (4) |
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145 | (1) |
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146 | (1) |
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147 | (1) |
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148 | (4) |
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12.2 Alignment Mark (Mark) Design on the Photomask |
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152 | (4) |
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12.3 Contemporary Photolithography Equipment Technologies |
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156 | (5) |
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159 | (2) |
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13 Dielectric Films Growth |
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161 | (18) |
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13.1 The Growth of Silicon Dioxide Film |
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162 | (6) |
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13.1.1 Thermal Oxidation Process of SiO2 |
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162 | (2) |
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164 | (2) |
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13.1.3 PECVD Process of Silicon Dioxide |
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166 | (1) |
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13.1.4 TEOS + O3 Deposition Using APCVD System |
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167 | (1) |
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13.2 The Growth of Silicon Nitride Film |
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168 | (6) |
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168 | (3) |
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13.2.2 PECVD Process of Silicon Nitride |
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171 | (3) |
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13.3 Atomic Layer Deposition Technique |
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174 | (5) |
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177 | (2) |
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14 Introduction of Etching and RIE System |
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179 | (18) |
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179 | (3) |
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14.2 RIE System for Dry Etching |
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182 | (15) |
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14.2.1 RIE Process Flow and Equipment Structure |
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182 | (2) |
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184 | (2) |
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186 | (1) |
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14.2.4 RF Power Supply (Source) and Matching Network (Matchwork) |
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187 | (2) |
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14.2.5 Gas Cylinder and Mass Flow Controller (MFC) |
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189 | (5) |
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14.2.6 Heater and Coolant |
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194 | (2) |
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196 | (1) |
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197 | (28) |
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15.1 The Etch Profile of RIE |
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197 | (6) |
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198 | (3) |
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201 | (2) |
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203 | (3) |
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15.3 Dry Etching of III--V Semiconductors and Metals |
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206 | (1) |
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15.4 Etch Profile Control |
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207 | (4) |
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15.4.1 Influence of the PR Opening Shape on the Etch Profile |
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208 | (1) |
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15.4.2 The Effect of Carbon on Etching Rate and Profile |
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209 | (2) |
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211 | (4) |
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15.5.1 The Differences Between RIE and PECVD |
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211 | (3) |
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15.5.2 The Difference Between Si and SiO2 Dry Etching |
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214 | (1) |
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15.6 Inductively Coupled Plasma (ICP) Technique and Bosch Process |
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215 | (10) |
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15.6.1 Inductively Coupled Plasma Technique |
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216 | (3) |
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219 | (4) |
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223 | (2) |
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225 | (20) |
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16.1 Thermal Evaporation Technique |
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225 | (2) |
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16.2 Electron Beam Evaporation Technique |
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227 | (4) |
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16.3 Magnetron Sputtering Deposition Technique |
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231 | (3) |
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16.4 The Main Differences Between Electron Beam (Thermal) Evaporation and Sputtering Deposition |
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234 | (1) |
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16.5 Metal Lift-off Process |
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235 | (6) |
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16.6 Metal Selection and Annealing Technology |
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241 | (4) |
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16.6.1 The Selection of Metals |
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241 | (1) |
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242 | (1) |
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243 | (2) |
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245 | (26) |
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17.1 Basic Introduction of Doping |
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245 | (1) |
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17.2 Basic Principles of Diffusion |
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246 | (1) |
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247 | (1) |
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17.4 Diffusion and Redistribution of Impurities in SiO2 |
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248 | (2) |
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17.5 Minimum Thickness of SiO2 Masking Film |
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250 | (1) |
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17.6 The Distribution of Impurities Under the SiO2 Masking Film |
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251 | (1) |
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17.7 Diffusion Impurity Sources |
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252 | (3) |
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17.8 Parameters of the Diffusion Layer |
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255 | (1) |
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17.9 Four-Point Probe Sheet Resistance Measurement |
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256 | (1) |
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17.10 Ion Implantation Process |
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257 | (2) |
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17.11 Theoretical Analysis of Ion Implantation |
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259 | (1) |
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17.12 Impurity Distribution after Implantation |
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260 | (2) |
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17.13 Type and Dose of Implanted Impurities |
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262 | (1) |
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17.14 The Minimum Thickness of Masking Film |
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263 | (1) |
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264 | (2) |
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17.16 Buried Implantation |
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266 | (5) |
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17.16.1 Implantation through Masking Film |
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266 | (1) |
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267 | (3) |
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270 | (1) |
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18 Process Control Monitor, Packaging, and the Others |
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271 | (24) |
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18.1 Dielectric Film Quality Inspection |
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271 | (2) |
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273 | (1) |
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18.3 Metal-to-Metal Contact |
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274 | (3) |
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18.4 Conductive Channel Control |
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277 | (1) |
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278 | (1) |
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279 | (1) |
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280 | (1) |
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18.8 Equipment Operation Range |
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281 | (1) |
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18.9 Low-k and High-k Dielectrics |
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282 | (9) |
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18.9.1 Copper Interconnection and Low-k Dielectrics |
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283 | (3) |
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18.9.2 Quantum Tunneling Effect and High-k Dielectrics |
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286 | (5) |
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291 | (4) |
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293 | (2) |
Index |
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295 | |